International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
02/14/07
www.irf.com 1
IRHNA7064
JANSR2N7431U
60V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard
™
HEXFET
®
TECHNOLOGY
Features:
nSingle Event Effect (SEE) Hardened
nLow RDS(on)
nLow Total Gate Charge
nSimple Drive Requirements
nEase of Paralleling
nHermetically Sealed
nSurface Mount
nLight Weight
*Current is limited by package
For footnotes refer to the last page
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 56
IDM Pulsed Drain Current À 300
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á 500 mJ
IAR Avalanche Current À 75* A
EAR Repetitive Avalanche Energy À 30 mJ
dv/dt Peak Diode Recovery dv/dt  2.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5sec)
Weight 3.3 (Typical) g
Pre-Irradiation
oC
A
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNA7064 100K Rads (Si) 0.015Ω 75A* JANSR2N7431U
IRHNA3064 300K Rads (Si) 0.015Ω 75A* JANSF2N7431U
IRHNA4064 500K Rads (Si) 0.015Ω 75A* JANSG2N7431U
IRHNA8064 1000K Rads (Si) 0.015Ω 75A* JANSH2N7431U
SMD-2
PD - 91416D
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IRHNA7064, JANSR2N7431U Pre-Irradiation
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 75*
ISM Pulse Source Current (Body Diode) À— — 300
VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 75A, VGS = 0V Ã
trr Reverse Recovery Time — — 360 ns Tj = 25°C, IF = 75A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 3.1 µC VDD ≤ 50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.42
RthJ-PCB Junction-to-PC board — 1.6 — Soldered to a 1” sq. copper-clad board
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.056 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.015 VGS = 12V, ID = 56A
Resistance — — 0.018 VGS = 12V, ID = 75A
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 18 — — S VDS > 15V, IDS = 56A Ã
IDSS Zero Gate Voltage Drain Current — — 25 VDS= 48V ,VGS=0V
— — 250 VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
QgTotal Gate Charge — — 270 VGS =12V, ID = 75A
Qgs Gate-to-Source Charge — — 60 nC VDS = 30V
Qgd Gate-to-Drain (‘Miller’) Charge — — 110
td(on) Turn-On Delay Time — — 27 VDD =30V, ID = 75A
trRise Time — — 120 VGS =12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 120
tfFall Time — — 100
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 4900 — VGS = 0V, VDS = 25V
Coss Output Capacitance — 2800 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 860 —
nA
Ã
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source pad
°C/W
*Current is limited by package
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
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Pre-Irradiation IRHNA7064, JANSR2N7431U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNA7064 (JANSR2N7431U)
2. Part numbers IRHNA3064 (JANSF2N7431U), IRHNA4064 (JANSG2N7431U) and IRHNA8064 (JANSH2N7431U)
Fig a. Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Radiation Characteristics
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Br 36.8 305 39 60 60 45 40 30
I 59.9 345 32.8 40 35 30 25 20
0
10
20
30
40
50
60
70
0 -5 -10 -15 -20
VGS
VDS
BR
I
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter 100K Rads(Si)1 300K-1000KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage 60 — 60 — V VGS = 0V, ID = 1.0mA
VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V
IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS = 48V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.015 — 0.025 Ω VGS = 12V, ID =56A
On-State Resistance (TO-3)
VSD Diode Forward Voltage à — 1.5 — 1.5 V VGS = 0V, IS = 75A
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IRHNA7064, JANSR2N7431U Pre-Irradiation
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
10
100
1000
5678910 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
12V
89A
75A
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Pre-Irradiation IRHNA7064, JANSR2N7431U
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
050 100 150 200 250
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
35A
V = 12V
DS
V = 30V
DS
V = 48V
DS
1
10
100
1000
0.0 1.0 2.0 3.0 4.0 5.0
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
75A
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IRHNA7064, JANSR2N7431U Pre-Irradiation
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
25 50 75 100 125 150
0
20
40
60
80
100
120
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Pre-Irradiation IRHNA7064, JANSR2N7431U
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
200
400
600
800
1000
1200
1400
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
16A
22A
35A
VGS
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IRHNA7064, JANSR2N7431U Pre-Irradiation
Foot Notes:
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2007
ÃPulse width ≤ 300 µs; Duty Cycle ≤ 2%
ÄTotal Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
ÅTotal Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
ÀRepetitive Rating; Pulse width limited by
maximum junction temperature.
ÁVDD = 25V, starting TJ = 25°C, L=0.17mH
Peak IL = 75A, VGS =12V
ÂISD ≤ 75A, di/dt ≤ 220A/µs,
VDD ≤ 60V, TJ ≤ 150°C
