FDN372S 30V N-Channel PowerTrench SyncFETTM General Description Features The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor's monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. * 2.6 A, 30 V. RDS(ON) = 40 m @ VGS = 10 V RDS(ON) = 50 m @ VGS = 4.5 V * Low gate charge * Fast switching speed * High performance trench technology for extremely low RDS(ON) Applications * DC-DC Converter * Motor Drives D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed TJ, TSTG Units 30 V 16 V 2.6 A 10 Power Dissipation for Single Operation PD Ratings (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range -55 to +150 W C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case (Note 1a) 250 C/W (Note 1) 75 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 372 FDN372S 7'' 8mm 3000 units 2002 Fairchild Semiconductor Corporation FDN372S Rev C(W) FDN372S September 2002 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, VDS = 24 V, VGS = 0 V 500 A IGSS Gate-Body Leakage VGS = 16 V, VDS = 0 V 100 nA 3 V On Characteristics ID = 1 mA 30 V 24 ID = 10 mA, Referenced to 25C mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 10 mA, Referenced to 25C ID = 1 mA ID(on) On-State Drain Current VGS = 10 V, ID = 2.6 A ID = 2.3 A VGS = 4.5 V, VGS = 10V, ID = 2.6 A, TJ = 125C VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10V, ID = 2.6 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 1.4 -3.2 32 36 45 mV/C 40 50 60 m 10 A 15 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge V GS = 15 mV f = 1.0 MHz 630 pF 115 pF 45 pF 2.4 (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 VDS = 15 V, VGS = 5 V ID = 2.6 A, 7 14 ns 5 10 ns 21 34 ns 2.7 5.4 ns 5.8 8.1 nC 1.3 1.9 nC 1.2 1.7 nC 0.7 A 440 700 mV Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD trr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 0.7 A IF = 2.6 A, diF/dt = 300 A/s (Note 2) (Note 2) 10 ns 4 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN372S Rev C(W) FDN372S Electrical Characteristics FDN372S Typical Characteristics 2.2 25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V VGS = 10V 3.5V ID, DRAIN CURRENT (A) 20 3.0V 15 10 2.5V 5 0 2 VGS = 2.5V 1.8 1.6 1.4 3.5V 4.5V 1 2 3 4 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.12 ID = 2.6A VGS = 10V 0.11 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 0.8 0 1.4 1.2 1 0.8 ID = 1.3A 0.1 0.09 TA = 125oC 0.08 0.07 0.06 0.05 TA = 25oC 0.04 0.03 0.6 0.02 -50 -25 0 25 50 75 100 125 1 o 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 8 IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = 10V ID, DRAIN CURRENT (A) 5.0V 4 5V 1.2 25oC 6 125oC 4 2 0 VGS = 0V 1 0.1 TA = 125oC 25oC 0.01 -55oC 0.001 0.0001 0.5 1.5 2.5 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0.0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN372S Rev C(W) FDN372S Typical Characteristics 800 ID = 2.6A VDS = 10V f = 1 MHz VGS = 0 V 15V 4 Ciss 600 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 20V 3 2 400 200 1 Coss Crss 0 0 1 2 3 4 5 6 0 7 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 100 20 10 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100s 1ms 10ms 1s DC 1 100ms VGS = 10V SINGLE PULSE RJA = 270oC/W 0.1 TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 270C/W TA = 25C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJA(t) = r(t)* RJA o 0.2 0.1 RJA = 270 C/W 0.1 0.05 P(pk) 0.02 0.01 0.001 0.0001 t1 t2 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN372S Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1