September 2002
2002 Fairc hild S emi c onduc tor Corporation FDN372S Rev C(W)
FDN372S
30V N-Channel PowerTrench
SyncFET™
General Description
The FDN372S is designed t o replace a si ngle MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Applications
• DC-DC Converter
• Motor Drives
Features
• 2.6 A, 30 V. R
DS(ON)
= 40 mΩ @ V
GS
= 10 V
R
DS(ON)
= 50 mΩ @ V
GS
= 4.5 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
TM
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage ± 16 V
I
D
Drain Current – Continuous (Note 1a) 2.6 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 0.5
P
D
(Note 1b) 0.46 W
T
J
, T
STG
Operating and Storage Junction Tem perature Range –55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantit y
372 FDN372S 7’’ 8mm 3000 units
D
S
G
FDN372S
FDN372S Rev C(W )
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA 30 V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient I
D
= 10 mA, Referenced to 25°C 24
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V 500 µA
I
GSS
Gate–Body Leakage V
GS
= ±16 V, V
DS
= 0 V ±100 nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 1 mA 1 1.4 3 V
∆V
GS(th)
∆T
J
Gate Threshold Voltage
Temperature Coef fic i ent I
D
= 10 mA, Referenced to 25°C
–3.2 mV/°C
R
DS(on)
Static Drain–Source
On–Resistance V
GS
= 10 V, I
D
= 2.6 A
V
GS
= 4.5 V, I
D
= 2.3 A
V
GS
= 10V, I
D
= 2.6 A, T
J
= 125°C
32
36
45
40
50
60
mΩ
I
D(on)
On–State Drain Current V
GS
= 10 V, V
DS
= 5 V 10 A
g
FS
Forward Transconductance V
DS
= 10V, I
D
= 2.6 A 15 S
Dynamic Characteristics
C
iss
Input Capacitance 630 pF
C
oss
Output Capacitance 115 pF
C
rss
Reverse Transfer Capacit ance
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz 45 pF
Rg Gate Resistance V
GS
= 15 mV f = 1.0 MHz 2.4 Ω
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time 7 14 ns
t
r
Turn–On Rise Time 5 10 ns
t
d(off)
Turn–Off Delay Time 21 34 ns
t
f
Tu r n –O ff Fall Time
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6 Ω
2.7 5.4 ns
Q
g
Total Gate Charge 5.8 8.1 nC
Q
gs
Gate–Source Charge 1.3 1.9 nC
Q
gd
Gate–Drain Charge
V
DS
= 15 V, I
D
= 2.6 A,
V
GS
= 5 V
1.2 1.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 0.7 A
V
SD
Drain–Source Diode Forward
Voltage V
GS
= 0 V, I
S
= 0.7 A (Note 2) 440 700 mV
trr Diode Reverse Recovery Time 10 ns
Qrr Diode Reverse Recovery Charge I
F
= 2.6 A,
d
iF
/d
t
= 300 A/µs (Note 2) 4 nC
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in
2
pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN372S
FDN372S Rev C(W )
Typical Characteristics
0
5
10
15
20
25
01234
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 10V
3.0V
2.5V
3.5V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0102030
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.5V
5.0V
45V
4.5V
3.5V
10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 2.6A
V
GS
= 10V
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
12345678910
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 1.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
10
0.5 1.5 2.5 3.5 4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 10V
0.0001
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6
V
SD
,
BODY DIODE FORWARD VOLTA G E ( V )
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN372S
FDN372S Rev C(W )
Typical Characteristics
0
1
2
3
4
5
01234567
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 2.6A V
DS
= 10V 15V
20V
0
200
400
600
800
0 5 10 15 20
V
DS
, DRAIN TO SOUR CE VOLTAG E (V)
CAPACITANCE (pF)
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE V OL TAGE (V)
I
D
, DRAIN CURRENT (A)
DC 1s 100ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θJA
= 270
o
C/W
T
A
= 25
o
C
10ms 1ms
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIE NT P O WE R ( W)
SINGLE PULSE
R
θJA
= 270°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL
RESISTANCE
R
θJA
(t) = r(t)* R
θJA
R
θJA
= 270
o
C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P
(p
k
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0. 5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN372S
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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