Features e Patented free-floating silicon technology @ Designed for traction, energy and industrial applications @ Optimum power handling capability ees Doc. No. 5SYA 1029-02 Dec.95 Blocking Part number | 5STP 24L2800 5STP 24L2600 5STP 24L2200 Conditions Vorm Vern 2800 V 2600 V 2200 V f = 50Hz, ft, =10ms Vesmi 3000 V 2800 V 2400 V tp= 5ms, single pulse lorm < 300 mA VorM IrRM < 300 mA VeRM Ty = 125C dv/dterit 1000 V/s @ Exp.to 0.67xVpr Mechanical data Fm Mounting force nom 50 kN min 45 kN Aemovable connectors max | 60KN sear : ETFE Deciae clamped 100 m/s? m Weight 1.35 kg Faston connector Ds Surface creepage distance 35 mm Ds Air strike distance 14mm ABB Semiconductors AG 79ABB Semiconductors AG SSTP 24L2800 On-state ItTaAvM Max. average on-state current 2350 A Half sine wave, To= 70C Itrms | Max. RMS on-state current 3680 A Its Max. peak non-repetitive 43000 A tp = 10ms surge current 46000 A tp = 8.3 ms Pt Limiting load integral 9245 kA?s | tp = 10 ms 8781 kA?s | tp = 8.3 ms Ty = 125C Vr On-state voltage 1.35 V ly = 3000A Vto Threshold voltage 0.85 V IT Slope resistance 0.160 mQ | fr = 1500 - 4500 A Ny Holding current 20-70 MA | Tji= 25C 15-60 MA | Ty = 125C AL Latching current 80-300 mA | hj = 25C 70-250 mA | Ty = 125C Switching difdterit_ | Critical rate of rise of on-state 150 A/us | Cont. Vp < 0.67 Vprm yj = 125C current Irem = 3000A f= 5OHz 300 A/us | 60 sec. Io = 20A te= 0.5us ty Delay time < 3.0 us) | Vp =0.4xVprm llpg = 2.0A t,= 0.5us ty Turn-off time < 400 ps | Vo <0.67xVorm |/trm = 3000A Ty = 125C dv) /dt=20V/yus|VR > 200V Q Recovery charge min 4000 yAs di, /dt= -20 A/s max 7000 pAs Triggering Vet Gate trigger voltage 26V Ty = 25C lot Gate trigger current 400 mA | Ay = 25C Vep Gate non-trigger voltage 0.3V |VYp=0.4xVpRM Iep Gate non-trigger DC current 10 mA | Vp = 0.4xVorm VeGm Peak forward gate voltage 12 V leom Peak forward gate current 10A VeGmM Peak reverse gate voltage 10 V Po Gate power losses 3W Doc. No. SSYA 1029-02 Dec.95ABB Semiconductors AG 5STP 24L2800 Thermal Tyjmax |Max. junction temperature 125 C Tyjstg | Storage temperature range -40.. ..150C Rthsc Thermal resistance junction 24 K/kW | Anode side cooled to case 24 K/kW | Cathode side cooled 12 K/kW | Double side cooled Rthcu | Thermal resistance case to 10 K/kW | Single side cooled heat sink . 5 K/kW_ | Double side cooled Zenit (K/KW) 16 Analytical function for transient thermal impedance: 14 180 sin add 12 180 1 add 120 F1 add n 10 60 Mm add t/t; 8 = . ~ ] Zinc = QU R(1-e"") | 2 j= 1 4 j 1 2 3 4 2 - 0 ie R; (K/W) | 0.0053 | 0.0051 | 0.0016 3 > 4 ; > 10 5 10 5 10 5 10 5 10 5 10 t (S) 2.1838 | 0.4151 | 0.0324 t(s) Fig.1 Transient thermal impedance, junction to case. 1, (A) 6000 =r I = VT 7 125 5500 4) 25C H 7 5000 7 # Jf. A | f 4500 - /1 min / Tmax kA) 3500 4 ft / id 3000 t 25 / Y} 2500 7 7 7 20 Af 4 2000 / 4 15 1500 4 a 4 , 10 1000 fy Lf fA 2 ey] os 500 z E 0 0 08 09 1.0 1.1 1.2 1.3 1.4 15 1.6 1.7 1.8 1.0 2.0 3.0 4.0 5.0 6.0 V, (V) V; (V) Fig.2 On-state characteristics. Fig.3 On-state characteristics. Doc. No. 5SYA 1029-02 Dec.95 81ABB Semiconductors AG 5STP 24L2800 P, (W} Tease (C) 130 rf 5 Double sided caoling| 125 \ 120 i 115 110 AN \ 3 105 \ . 100 \ 2 N 95 r+] oe 1 2 _L4 180 4 80 = 180 sineH 1 Te 120 n 85 1 \ ao \\ " \ T,= 125C \ \ B 70 3 0 400 800 1200 1600 2000 2400 2800 0 500 1000 1500 2000 2500 3000 3500 lay (A) lav (A) Fig.4 On-state power loss vs mean on-state current. Fig.5 Max. permissible case temperature vs mean Turn-on losses excluded. on-state current. rem (KA) It(MA?s) Irgm_ (KA) 30 hem: 1.V,_= 0 2, Vq = 0.6%Varw 25 tt: 3. Va= 0 4. V,= 0.6xV, a RRM 20 15 10 5 0 1 2 5 10 20 50-100 1 2 5 10 20 50. =: 100 t, (ms) n, Fig.6 Surge on-state current vs pulse length. Half-sine Fig-7 Surge on-state current vs number of pulses. wave, Half-sine wave, 10ms, 50Hz. 82 Doc. No. 5SYA 1029-02 Dec.95ABB Semiconductors AG Veg (V) 4.0 3.0 2.0 1.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 leg (A) 5STP 24L2800 Vig (V) 7 7 ~ 75W beg = 100u8 6 f- 20W thaw = 1ms 5 = 10ms 4 3 2 1 0 Oo 1 2 3 4 #5 6 7 8 9 10 leg (A) Fig.8 Gate trigger characteristics. Fig.9 Max. peak gate power loss. Q (wAs) 10 7H hraw= 30004 5 [Ta = Taman 4 3 2 w 10 fo wn 1 2 3 45 7 10 20 30 -di,/dt (A/ys} laa (A) 10 len = 3000A Ty = Tmax 3 2 10 7 5 3 2 10' 1 2 3 465 7 10 20 30 -di,/dt (A/ys} Fig.10 Recovery charge vs decay rate of on-stat current. Fig.11 Peak reverse recovery current vs decay rate of on-state current. Doc. No. 5SYA 1029-02 Dec.95 83