Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V TC = 80 C IC,nom. 75 A TC = 25 C IC 125 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 150 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 500 W VGES +/- 20V V IF 75 A IFRM 150 A 2 I t 1,19 kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 75A, V GE = 15V, Tvj = 25C VCE sat IC = 75A, V GE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 3mA, V CE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V...+15V QG - 0,8 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 5,1 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - 0,33 - nF VCE = 1200V, V GE = 0V, Tvj = 25C ICES - 3 92 A - 300 - A - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25C prepared by: Mark Munzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) IGES Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Charakteristische Werte / Characteristic values min. typ. max. - 0,05 - s - 0,06 - s - 0,05 - s - 0,05 - s - 0,3 - s - 0,35 - s - 0,05 - s - 0,07 - s Eon - 7,5 - mWs Eoff - 9 - mWs ISC - 540 - A LsCE - 25 - nH RCC`+EE` - 1,8 - m min. typ. max. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 75A, V CC = 600V VGE = 15V, R G = 10, Tvj = 25C td,on VGE = 15V, R G = 10, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 75A, V CC = 600V VGE = 15V, R G = 10, Tvj = 25C tr VGE = 15V, R G = 10, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 75A, V CC = 600V Fallzeit (induktive Last) fall time (inductive load) IC = 75A, V CC = 600V VGE = 15V, R G = 10, Tvj = 25C td,off VGE = 15V, R G = 10, Tvj = 125C VGE = 15V, R G = 10, Tvj = 25C tf VGE = 15V, R G = 10, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 75A, V CC = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 75A, V CC = 600V, V GE = 15V Kurzschluverhalten SC Data RG = 10, Tvj = 125C, LS = 60nH RG = 10, Tvj = 125C, LS = 60nH tP 10sec, V GE 15V, R G = 10 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 75A, V GE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 75A, - di F/dt = 2000A/sec VF IF = 75A, V GE = 0V, Tvj = 125C VR = 600V, VGE = -15V, T vj = 25C IRM VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 85 - A - 105 - A IF = 75A, - di F/dt = 2000A/sec VR = 600V, VGE = -15V, T vj = 25C Qr VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy - - 9 - As - 16,5 - As - 3 - mWs - 6,2 - mWs IF = 75A, - di F/dt = 2000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C 2(8) Erec Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,25 K/W - - 0,55 K/W RthCK - 0,009 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 150 C 6 Nm RthJC Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque 225 screw M5 M1 3 Nm Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight G 300 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 150 125 Tj = 25C Tj = 125C IC [A] 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125C 150 125 VGE = 17V VGE = 15V VGE = 13V VGE = 11V 100 IC [A] VGE = 9V VGE = 7V 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 150 125 Tj = 25C Tj = 125C IC [A] 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 150 125 Tj = 25C Tj = 125C IF [A] 100 75 50 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff = 10 , VCE = 600V, T j = 125C 24 Eoff 20 Eon Erec E [mJ] 16 12 8 4 0 0 25 50 75 100 125 150 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 75A , VCE = 600V , T j = 125C 30 Eoff 25 Eon Erec E [mJ] 20 15 10 5 0 0 5 10 15 20 25 30 35 40 45 50 55 60 RG [ ] 6(8) Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 100 t [sec] 1 2 3 4 27,96 84,63 110,28 27,13 i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode 0,002 0,03 0,066 1,655 71,97 190,64 207,99 79,40 i [sec] : Diode 0,002 0,03 0,072 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 10 Ohm, T vj= 125C 180 150 IC [A] 120 IC,Modul IC,Chip 90 60 30 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM75GD120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM75GD120DLC Econo 3 118.11 94.5 119 121.5 99.9 4 x 19.05 = 76.2 19.05 3.81 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 3.81 1.15x1.0 15.24 5 x 15.24 =76.2 110 connections to be made externally P+ / 21 P+ / 13 1 2 5 6 9 10 3 4 7 8 11 12 N- / 20 19 17 15 N- / 14 IS8 8(8) Seriendatenblatt_BSM75GD120DLC1.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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