Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage VCES 1200 V
Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 75 A
DC-collector current TC = 25 °C IC125 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 150 A
Gesamt-Verlustleistung
total power dissipation TC=25°C, Transistor Ptot 500 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Dauergleichstrom
DC forward current IF75 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 150 A
Grenzlastintegral der Diode
I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t1,19 kA2s
Isolations-Prüfspannung
insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
Charakteristische Werte / Characteristic values
Transistor / Transistor min. typ. max.
Kollektor-Emitter Sättigungsspannung IC = 75A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V
collector-emitter saturation voltage IC = 75A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V
Gate-Schwellenspannung
gate threshold voltage IC = 3mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V
Gateladung
gate charge VGE = -15V...+15V QG- 0,8 - µC
Eingangskapazität
input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 5,1 - nF
Rückwirkungskapazität
reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,33 - nF
Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES -392µA
collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 300 - µA
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA
prepared by: Mark Münzer date of publication: 09.09.1999
approved by: M. Hierholzer revision: 2
1(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 75A, VCC = 600V
turn on delay time (inductive load) VGE = ±15V, RG = 10Ω, Tvj = 25°C td,on - 0,05 - µs
VGE = ±15V, RG = 10Ω, Tvj = 125°C - 0,06 - µs
Anstiegszeit (induktive Last) IC = 75A, VCC = 600V
rise time (inductive load) VGE = ±15V, RG = 10Ω, Tvj = 25°C tr- 0,05 - µs
VGE = ±15V, RG = 10Ω, Tvj = 125°C - 0,05 - µs
Abschaltverzögerungszeit (ind. Last) IC = 75A, VCC = 600V
turn off delay time (inductive load) VGE = ±15V, RG = 10Ω, Tvj = 25°C td,off - 0,3 - µs
VGE = ±15V, RG = 10Ω, Tvj = 125°C - 0,35 - µs
Fallzeit (induktive Last) IC = 75A, VCC = 600V
fall time (inductive load) VGE = ±15V, RG = 10Ω, Tvj = 25°C tf- 0,05 - µs
VGE = ±15V, RG = 10Ω, Tvj = 125°C - 0,07 - µs
Einschaltverlustenergie pro Puls IC = 75A, VCC = 600V, VGE = 15V
turn-on energy loss per pulse RG = 10Ω, Tvj = 125°C, LS = 60nH Eon - 7,5 - mWs
Abschaltverlustenergie pro Puls IC = 75A, VCC = 600V, VGE = 15V
turn-off energy loss per pulse RG = 10Ω, Tvj = 125°C, LS = 60nH Eoff - 9 - mWs
Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 10Ω
SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 540 - A
Modulinduktivität
stray inductance module LsCE - 25 - nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 1,8 - mΩ
Charakteristische Werte / Characteristic values
Diode / Diode min. typ. max.
Durchlaßspannung IF = 75A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V
forward voltage IF = 75A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V
Rückstromspitze IF = 75A, - diF/dt = 2000A/µsec
peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM -85-A
VR = 600V, VGE = -15V, Tvj = 125°C - 105 - A
Sperrverzögerungsladung IF = 75A, - diF/dt = 2000A/µsec
recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Qr- 9 - µAs
VR = 600V, VGE = -15V, Tvj = 125°C - 16,5 - µAs
Abschaltenergie pro Puls IF = 75A, - diF/dt = 2000A/µsec
reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C Erec - 3 - mWs
VR = 600V, VGE = -15V, Tvj = 125°C - 6,2 - mWs
2(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
Thermische Eigenschaften / Thermal properties min. typ. max.
Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,25 K/W
thermal resistance, junction to case Diode/Diode, DC - - 0,55 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink pro Modul / per module
λPaste = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,009 - K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature Tvj - - 150 °C
Betriebstemperatur
operation temperature Top -40 - 125 °C
Lagertemperatur
storage temperature Tstg -40 - 150 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation AL2O3
CTI
comperative tracking index 225
Anzugsdrehmoment f. mech. Befestigung screw M5 M1 3 6 Nm
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse Nm
terminal connection torque
Gewicht
weight G 300 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
IC [A]
VCE [V]
IC [A]
VCE [V]
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Tj = 25°C
Tj = 125°C
Ausgangskennlinie (typisch) IC = f (VCE)
Output characteristic (typical) VGE = 15V
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
Ausgangskennlinienfeld (typisch) IC = f (VCE)
Output characteristic (typical) Tvj = 125°C
4(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
IC [A]
VGE [V]
IF [A]
VF [V]
0
25
50
75
100
125
150
56789101112
Tj = 25°C
Tj = 125°C
Übertragungscharakteristik (typisch) IC = f (VGE)
Transfer characteristic (typical) VCE = 20V
0
25
50
75
100
125
150
0,0 0,5 1,0 1,5 2,0 2,5 3,0
Tj = 25°C
Tj = 125°C
Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF)
Forward characteristic of inverse diode (typical)
5(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
E [mJ]
IC [A]
E [mJ]
RG [Ω
ΩΩ
Ω]
0
4
8
12
16
20
24
0 25 50 75 100 125 150
Eoff
Eon
Erec
Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Switching losses (typical) VGE=15V, Rgon = Rgoff = 10 Ω
ΩΩ
Ω, VCE = 600V, Tj = 125°C
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35 40 45 50 55 60
Eoff
Eon
Erec
Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
Switching losses (typical) VGE=15V , IC = 75A , VCE = 600V , Tj = 125°C
6(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
ZthJC
[K / W]
t [sec]
i 1234
ri [K/kW] : IGBT 27,96 84,63 110,28 27,13
τ
i [sec] : IGBT 0,002 0,03 0,066 1,655
r
i [K/kW] : Diode 71,97 190,64 207,99 79,40
τ
i [sec] : Diode 0,002 0,03 0,072 0,682
IC [A]
VCE [V]
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 10 Ohm, Tvj= 125°C
Transienter Wärmewiderstand ZthJC = f (t)
Transient thermal impedance
0
30
60
90
120
150
180
0 200 400 600 800 1000 1200 1400
IC,Modul
IC,Chip
0,001
0,01
0,1
1
0,001 0,01 0,1 1 10 100
Zth:Diode
Zth:IGBT
7(8) Seriendatenblatt_BSM75GD120DLC.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM75GD120DLC
21
7
8
9
10
5
6
4
3
connect ions to be made externally
12
1
20
2
13
14
P+ / P+ /
N- / N- /
IS8
11
19
17
15
119
94.5
118.11
123 5
19
612
3.8115.24 5 x 15.24 =76.2
110
19.05 3.81
4 x 19.05 = 76.2
99.9
121.5
1.15x1.0
4
18
789 1110
17 16 15
Econo 3
8(8) Seriendatenblatt_BSM75GD120DLC1.xls
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