BAR50... Silicon PIN Diodes * Current-controlled RF resistor for switching and attenuating applications * Frequency range above 10 MHz up to 6 GHz * Especially useful as antenna switch in mobile communication * Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) * Low forward resitance * Very low harmonics BAR50-02L BAR50-02V BAR50-03W Type BAR50-02L BAR50-02V BAR50-03W Package TSLP-2-1 SC79 SOD323 Configuration single,leadless single single LS(nH) 0.4 0.6 1.4 Marking AB a blue A * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation Ptot mW BAR50-02L, TS 130C 250 BAR50-02V, TS 120C 250 BAR50-03W, TS 116C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Unit C Nov-23-2004 BAR50... Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit K/W BAR50-02L 80 BAR50-02V 120 BAR50-03W 135 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 50 nA VF - 0.95 1.1 V DC Characteristics Reverse current VR = 50 V Forward voltage I F = 50 mA 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 Nov-23-2004 BAR50... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.24 0.5 VR = 5 V, f = 1 MHz - 0.2 0.4 VR = 0 V, f = 100 MHz - 0.2 - VR = 0 V, f = 1...1.8 GHz, BAR50-02L - 0.1 - VR = 0 V, f = 1...1.8 GHz, all other - 0.15 - Reverse parallel resistance RP k VR = 0 V, f = 100 MHz - 25 - VR = 0 V, f = 1 GHz - 6 - VR = 0 V, f = 1.8 GHz - 5 - Forward resistance rf IF = 0.5 mA, f = 100 MHz - 25 40 IF = 1 mA, f = 100 MHz - 16.5 25 IF = 10 mA, f = 100 MHz - 3 4.5 rr - 1100 - ns I-region width WI - 56 - m Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 3 mA, f = 1.8 GHz - -0.56 - IF = 5 mA, f = 1.8 GHz - -0.4 - IF = 10 mA, f = 1.8 GHz - -0.27 - VR = 0 V, f = 0.9 GHz - -24.5 - VR = 0 V, f = 1.8 GHz - -20 - VR = 0 V, f = 2.45 GHz - -18 - VR = 0 V, f = 5.6 GHz - -12 - Isolation1) 1BAR50-02L |S21|2 in series configuration, Z = 50 3 Nov-23-2004 BAR50... Diode capacitance CT = (VR) Reverse parallel resistance RP = (V R) f = Parameter f = Parameter 10 3 0.5 KOhm pF 10 2 Rp CT 0.4 0.35 10 1 0.3 1 MHz 100 MHz 1 GHz 1.8 GHz 0.25 100 MHz 1 GHz 1.8 GHz 10 0 0.2 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR V 20 VR Forward resistance rf = (IF ) Forward current IF = (VF) f = 100 MHz TA = Parameter 10 4 10 0 A Ohm 10 -1 10 3 IF rf 10 -2 10 2 10 -3 -40 C 25 C 85 C 125 C 10 1 10 -4 10 0 10 -1 -2 10 10 -5 10 -1 10 0 10 1 mA 10 10 -6 0 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 Nov-23-2004 BAR50... Forward current IF = (T S) Forward current IF = (T S) BAR50-02L BAR50-02V, BAR50-03W 120 120 mA mA 90 90 80 80 IF 100 IF 100 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 90 105 120 C 75 0 0 150 15 30 45 60 90 105 120 C 75 TS 150 TS Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR50-02L IFmax / I FDC = (t p) BAR50-02L 10 1 RthJS mA D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IFmax/ IFDC 10 2 mA 10 -2 C 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 C 10 0 tp 5 Nov-23-2004 BAR50... Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR50-02V IFmax / I FDC = (t p) BAR50-02V 10 2 I Fmax / I FDC 10 3 RthJS 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 tp Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR50-02W IFmax / I FDC = (t p) BAR50-02W 10 2 IFmax / IFDC 10 3 RthJS 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Nov-23-2004 BAR50... Permissible Puls Load RthJS = (tp) Permissible Pulse Load BAR50-03W IFmax / I FDC = (t p) BAR50-03W 10 10 2 I Fmax / I FDC 3 RthJS 10 2 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 tp Insertion loss |S21|2 = (f) Isolation |S21|2 = (f) IF = Parameter VR = Parameter BAR50-02L in series configuration, Z = 50 BAR50-02L in series configuration, Z = 50 0 0 dB 100 mA dB |S21|2 |S21|2 -0.2 10 mA -0.3 -10 5 mA -0.4 -15 -0.5 3 mA -20 -0.6 0V 1V 10 V -25 -0.7 -0.8 0 1 2 3 4 GHz -30 0 6 f 1 2 3 4 GHz 6 f 7 Nov-23-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. 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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.