Nov-23-2004
1
BAR50...
Silicon PIN Diodes
• Current-controlled RF resistor
for switching and attenuating applications
• Frequency range above 10 MHz up to 6 GHz
• Especially useful as antenna switch
in mobile communication
• Very low capacitance at zero volt reverse bias
at freuencies above 1 GHz (typ. 0.15 pF)
• Low forward resitance
• Very low harmonics
BAR50-02L
BAR50-02V
BAR50-03W
Type Package Configuration LS(nH) Marking
BAR50-02L
BAR50-02V
BAR50-03W
TSLP-2-1
SC79
SOD323
single,leadless
single
single
0.4
0.6
1.4
AB
a
blue A
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR50 V
Forward current IF100 mA
Total power dissipation
BAR50-02L, TS ≤ 130°C
BAR50-02V, TS ≤ 120°C
BAR50-03W, TS ≤ 116°C
Ptot
250
250
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tstg -55 ... 150
Nov-23-2004
2
BAR50...
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR50-02L
BAR50-02V
BAR50-03W
RthJS
≤ 80
≤ 120
≤ 135
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 50 V IR- - 50 nA
Forward voltage
IF = 50 mA VF- 0.95 1.1 V
1For calculation of RthJA please refer to Application Note Thermal Resistance
Nov-23-2004
3
BAR50...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 5 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1...1.8 GHz, BAR50-02L
VR = 0 V, f = 1...1.8 GHz, all other
CT
-
-
-
-
-
0.24
0.2
0.2
0.1
0.15
0.5
0.4
-
-
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
25
6
5
-
-
-
kΩ
Forward resistance
IF = 0.5 mA, f = 100 MHz
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
-
25
16.5
3
40
25
4.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 1100 - ns
I-region width WI- 56 - µm
Insertion loss1)
IF = 3 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
|S21|2
-
-
-
-0.56
-0.4
-0.27
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
VR = 0 V, f = 5.6 GHz
|S21|2
-
-
-
-
-24.5
-20
-18
-12
-
-
-
-
1BAR50-02L in series configuration, Z = 50 Ω
Nov-23-2004
4
BAR50...
Diode capacitance CT = ƒ (VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
0.1
0.15
0.2
0.25
0.3
0.35
0.4
pF
0.5
CT
1 MHz
100 MHz
1 GHz
1.8 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 2 4 6 8 10 12 14 16 V20
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100 MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
2
10
3
10
4
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
Nov-23-2004
5
BAR50...
Forward current IF = ƒ (TS)
BAR50-02L
0 15 30 45 60 75 90 105 120 °C 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Forward current IF = ƒ (TS)
BAR50-02V, BAR50-03W
0 15 30 45 60 75 90 105 120 C° 150
TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
IF
Permissible Puls Load RthJS = ƒ (tp)
BAR50-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
2
10
mA
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-02L
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
mA
IFmax/ IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Nov-23-2004
6
BAR50...
Permissible Puls Load RthJS = ƒ (tp)
BAR50-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-02V
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
IFmax / IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
IFmax / IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAR50-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Nov-23-2004
7
BAR50...
Permissible Puls Load RthJS = ƒ (tp)
BAR50-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR50-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
IFmax / IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Insertion loss |S21|2 = ƒ(f)
IF = Parameter
BAR50-02L in series configuration, Z = 50Ω
01234GHz 6
f
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
dB
0
|S21|2
5 mA
10 mA
100 mA
3 mA
Isolation |S21|2 = ƒ(f)
VR = Parameter
BAR50-02L in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|2
0 V
1 V
10 V
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2004.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.Infineon.com).
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question please contact your nearest Infineon Technologies Office.
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devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
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