Semiconductor Group 1
BC 517
NPN Silicon Darlington Transistor BC 517
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 517 Q62702-C825– TO-92
123
C B E
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 30 V
Peak collector current ICM 800
Base current IB100
Collector current IC500 mA
Junction temperature Tj150 ˚C
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 40
Thermal Resistance
Junction - ambient Rth JA ≤ 200 K/W
Emitter-base voltage VEB0 10
Peak base current IBM 200
Junction - case2) Rth JC ≤ 135
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
●High current gain
●High collector current
●Complementary type: BC 516 (PNP)
1
2
3
1
Semiconductor Group 2
BC 517
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 10 mA V(BR)CE0 30 – –
Collector-base breakdown voltage
I
C = 100 µAV(BR)CB0 40 – –
–DC current gain
I
C = 20 mA; VCE = 2 V1)hFE 30 000 – –
MHzTransition frequency
I
C = 50 mA, VCE = 5 V, f = 20 MHz fT– 150 –
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
AC characteristics
Emitter-base breakdown voltage
I
E = 10 µAV(BR)EB0 10 – –
nA
µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0 –
––
–100
10 nAEmitter cutoff current
VEB = 4 V IEB0 – – 100
V
Collector-emitter saturation voltage1)
I
C = 100 mA; IB = 0.1 mA VCEsat ––1
Base-emitter voltage1)
I
C = 10 mA; VCE = 5 V VBE – – 1.4
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo – 3.5 –
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 3
BC 517
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 30 V
Transition frequency fT=f(IC)
VCE = 5 V, f = 20 MHz
Semiconductor Group 4
BC 517
Collector-emitter saturation voltage
IC=f (VCEsat)
hFE = 1000, parameter = TA
DC current gain hFE =f(IC)
VCE = 2 V, parameter = TA
Base-emitter saturation voltage
IC=f (VBEsat)
hFE = 1000, parameter = TA
Capacitance C = f (VEB,VCB)
