DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD57 series Ultra-fast soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1998 Dec 04 1999 Nov 11 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series FEATURES DESCRIPTION * Glass passivated Cavity free cylindrical glass SOD87 package through Implotec(1) technology. The SOD87 is * High maximum operating temperature hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability k handbook, 4 columns a * Shipped in 8 mm embossed tape * Smallest surface mount rectifier outline. MAM061 Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER BYD57D - MAX. UNIT 200 V BYD57G - 400 V BYD57J - 600 V BYD57K - 800 V BYD57M - 1000 V BYD57U - 1200 V BYD57V - 1400 V BYD57D - 200 V BYD57G - 400 V continuous reverse voltage BYD57J - 600 V BYD57K - 800 V BYD57M - 1000 V BYD57U - 1200 V BYD57V - 1400 V Ttp = 85 C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 - 1.0 A - 1.2 A Tamb = 60 C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - 0.4 A - 0.4 A BYD57D to M - 8.5 A BYD57U and V - 11 A average forward current BYD57U and V average forward current BYD57D to M BYD57U and V IFRM MIN. repetitive peak reverse voltage BYD57D to M IF(AV) CONDITIONS repetitive peak forward current 1999 Nov 11 Ttp = 85 C; see Figs 6 and 7 2 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM BYD57 series PARAMETER repetitive peak forward current CONDITIONS MIN. MAX. UNIT Tamb = 60 C; see Figs 8 and 9 BYD57D to M - 3.0 A BYD57U and V - 3.7 A 5.0 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = 25 C prior to surge; VR = VRRMmax - ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - Tstg storage temperature Tj junction temperature 10 mJ -65 +175 C -65 +175 C MIN. TYP. MAX. - - 2.1 V - - 1.7 V - - 3.6 V - - 2.3 V 300 - - V see Fig.12 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD57D to M CONDITIONS IF = 1 A; Tj = Tj max; see Figs 13 and 14 BYD57U and V VF forward voltage BYD57D to M IF = 1 A; see Figs 13 and 14 BYD57U and V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD57D IR trr BYD57G 500 - - V BYD57J 700 - - V BYD57K 900 - - V BYD57M 1100 - - V BYD57U 1300 - - V BYD57V 1500 - - V VR = VRRMmax; see Fig.15 - - 5 A VR = VRRMmax; Tj = 165 C; see Fig.15 - - 100 A reverse current reverse recovery time BYD57D to J BYD57K and M when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 BYD57U and V Cd diode capacitance 1999 Nov 11 UNIT f = 1 MHz; VR = 0; see Fig.16 3 - - 30 ns - - 75 ns - - 150 ns - 20 - pF Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers SYMBOL dI R -------dt BYD57 series PARAMETER maximum slope of reverse recovery current BYD57D to J BYD57K and M CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.19 BYD57U and V MIN. TYP. MAX. UNIT - - 7 A/s - - 6 A/s - - 5 A/s THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS note 1 VALUE UNIT 30 K/W 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.17. For more information please refer to the `General Part of associated Handbook'. 1999 Nov 11 4 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series GRAPHICAL DATA MSA961 2.0 MGM273 2.0 handbook, halfpage I F(AV) (A) 1.6 IF(AV) (A) 1.6 1.2 1.2 0.8 0.8 0.4 0.4 0 0 40 80 120 0 160 200 T tp (oC) 0 40 80 BYD57D to M a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. BYDU and V a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. Fig.2 Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). 120 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MSA960 0.5 160 200 Ttp (C) MGM272 0.6 handbook, halfpage I F(AV) IF(AV) (A) (A) 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0 40 80 120 160 200 Tamb ( o C) 0 BYD57D to M a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.17. Switched mode application. Fig.4 80 120 160 200 Tamb (C) BYD57U and V a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.17. Switched mode application. Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 1999 Nov 11 40 Fig.5 5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series MSA964 10 handbook, full pagewidth I FRM = 0.05 (A) 8 6 0.1 4 0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 tp (ms) 10 4 BYD57D to M Ttp = 85 C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGM275 16 handbook, full pagewidth IFRM (A) 12 = 0.05 8 0.1 0.2 4 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 BYD57U and V Ttp = 85 C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 11 6 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series MSA965 4 handbook, full pagewidth I FRM (A) 3 2 = 0.05 0.1 0.2 1 0.5 1 0 10 2 10 1 1 10 10 2 10 3 tp (ms) 10 4 BYD57D to M Tamb = 60 C; Rth j-a = 150K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGM274 4 handbook, full pagewidth IFRM = 0.05 (A) 3 0.1 2 0.2 1 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 BYD57U and V Tamb = 60 C; Rth j-a = 150K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1999 Nov 11 7 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series MGC525 MGM271 5 3 handbook, halfpage handbook, halfpage P (W) a=3 2.5 2 P (W) 1.57 1.42 a = 3 2.5 2 1.57 4 1.42 2 3 2 1 1 0 0 0 0.5 IF(AV) (A) 0 1.0 0.4 0.8 1.2 1.6 2 IF(AV) (A) BYD57D to M a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. BYD57U and V a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5. Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. MBK457 200 MSA963 4 handbook, halfpage handbook, halfpage IF (A) Tj ( oC) 3 100 2 D 0 G J K 0 M 1000 U V 1 VR (V) 2000 0 4 6 V F (V) 8 BYD57D to M Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Solid line = VR. Dotted line = VRRM; = 0.5. Fig.12 Maximum permissible junction temperature as a function of reverse voltage. 1999 Nov 11 2 Fig.13 Forward current as a function of forward voltage; maximum values. 8 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series MGM270 4 MGC532 3 10halfpage handbook, handbook, halfpage IF (A) IR (A) 3 10 2 2 10 1 0 0 1 2 3 VF (V) 1 4 BYD57U and V Dotted line: Tj = 175 C. Solid line: Tj = 25 C. 0 100 200 o Tj ( C) VR = VRRMmax. Fig.14 Forward current as a function of forward voltage; maximum values. Fig.15 Reverse current as a function of junction temperature; maximum values. MGC524 10 2 handbook, halfpage 50 Cd (pF) 4.5 10 50 2.5 1 1 10 102 VR (V) 1.25 103 MSB213 f = 1 MHz; Tj = 25 C. Dimensions in mm. Fig.16 Diode capacitance as a function of reverse voltage; typical values. 1999 Nov 11 Fig.17 Printed-circuit board for surface mounting. 9 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers handbook, full pagewidth BYD57 series IF (A) DUT + 10 0.5 25 V t rr 1 50 0 t 0.25 0.5 IR (A) 1.0 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. IF halfpage ndbook, dI F dt t rr 10% t dI R dt 100% IR MGC499 Fig.19 Reverse recovery definitions. 1999 Nov 11 10 MAM057 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers BYD57 series PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors SOD87 k a (2) D1 L L H DIMENSIONS (mm are the original dimensions) UNIT D D1 H L mm 2.1 2.0 2.0 1.8 3.7 3.3 0.3 D 0 1 2 mm scale Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD87 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Nov 11 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 135002/04/pp12 Date of release: 1999 Nov 11 Document order number: 9397 750 06267