DATA SH EET
Product specification
Supersedes data of 1998 Dec 04 1999 Nov 11
DISCRETE SEMICONDUCTORS
BYD57 series
Ultra-fast soft-recovery
controlled avalanche rectifiers
b
ook, halfpage
M3D121
1999 Nov 11 2
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Shipped in 8 mm embossed tape
•Smallest surface mount rectifier
outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec(1)
technology. The SOD87 is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYD57D −200 V
BYD57G −400 V
BYD57J −600 V
BYD57K −800 V
BYD57M −1000 V
BYD57U −1200 V
BYD57V −1400 V
VRcontinuous reverse voltage
BYD57D −200 V
BYD57G −400 V
BYD57J −600 V
BYD57K −800 V
BYD57M −1000 V
BYD57U −1200 V
BYD57V −1400 V
IF(AV) average forward current Ttp =85°C; see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M −1.0 A
BYD57U and V −1.2 A
IF(AV) average forward current Tamb =60°C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD57D to M −0.4 A
BYD57U and V −0.4 A
IFRM repetitive peak forward current Ttp =85°C; see Figs 6 and 7
BYD57D to M −8.5 A
BYD57U and V −11 A
1999 Nov 11 3
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
IFRM repetitive peak forward current Tamb =60°C; see Figs 8 and 9
BYD57D to M −3.0 A
BYD57U and V −3.7 A
IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj=25°C
prior to surge; VR=V
RRMmax
−5.0 A
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off −10 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Fig.12 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j max;
see Figs 13 and 14
BYD57D to M −−2.1 V
BYD57U and V −−1.7 V
VFforward voltage IF=1A;
see Figs 13 and 14
BYD57D to M −−3.6 V
BYD57U and V −−2.3 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYD57D 300 −−V
BYD57G 500 −−V
BYD57J 700 −−V
BYD57K 900 −−V
BYD57M 1100 −−V
BYD57U 1300 −−V
BYD57V 1500 −−V
I
Rreverse current VR=V
RRMmax;
see Fig.15 −− 5µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig.15 −−100 µA
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig.18
BYD57D to J −−30 ns
BYD57K and M −−75 ns
BYD57U and V −−150 ns
Cddiode capacitance f = 1 MHz; VR=0;
see Fig.16 −20 −pF
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1999 Nov 11 4
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the
‘General Part of associated Handbook’
.
maximum slope of reverse recovery
current when switched from
IF=1AtoV
R≥30 V and
dIF/dt = −1A/µs;
see Fig.19
BYD57D to J −− 7A/µs
BYD57K and M −− 6A/µs
BYD57U and V −− 5A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 30 K/W
Rth j-a thermal resistance from junction to ambient note 1 150 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dIR
dt
--------
1999 Nov 11 5
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
GRAPHICAL DATA
BYD57D to M
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
currentasafunctionoftie-pointtemperature
(including losses due to reverse leakage).
0 40 80 120 160 200
0
0.4
0.8
1.2
1.6
2.0
T ( C)
tp o
IF(AV)
(A)
MSA961
BYDU and V
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
handbook, halfpage
0 200
2.0
0
0.4
MGM273
0.8
1.2
1.6
40 80 120 160
IF(AV)
(A)
Ttp (°C)
Fig.3 Maximum permissible average forward
currentasafunctionoftie-pointtemperature
(including losses due to reverse leakage).
BYD57D to M
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
Fig.4 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
0 40 80 120 160 200
0
0.1
0.2
0.3
0.4
0.5
Tamb ( C)
o
IF(AV)
(A)
MSA960
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYD57U and V
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.17.
Switched mode application.
handbook, halfpage
0
0.6
0.4
0.2
020040 80 120 160
MGM272
IF(AV)
(A)
Tamb (°C)
1999 Nov 11 6
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
handbook, full pagewidth
10 2
0
2
4
6
8
10
IFRM
(A)
10 111010
2103104
tp (ms)
MSA964
0.1
0.5
1
δ = 0.05
0.2
BYD57D to M
Ttp =85°C; Rth j-tp = 30 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
4
0
12
8
MGM275
10−210−111010
2103104
IFRM
(A)
tp (ms)
δ = 0.05
0.1
0.2
0.5
1
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYD57U and V
Ttp =85°C; Rth j-tp = 30 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
1999 Nov 11 7
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
handbook, full pagewidth
10 2
0
1
2
3
4
IFRM
(A)
10 111010
2103104
MSA965
0.1
0.5
1
δ = 0.05
0.2
tp (ms)
BYD57D to M
Tamb =60°C; Rth j-a = 150K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
4
1
0
3
2
MGM274
10−210−111010
2103104
IFRM
(A)
tp (ms)
δ = 0.05
0.1
0.2
0.5
1
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
BYD57U and V
Tamb =60°C; Rth j-a = 150K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 1000 V.
1999 Nov 11 8
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
BYD57D to M
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
0
3
2
1
01.0
MGC525
0.5
P
(W)
IF(AV) (A)
2
a=3 1.57
2.5 1.42
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYD57U and V
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
handbook, halfpage
02
5
0
1
MGM271
2
3
4
0.8 1.2 1.60.4
P
(W)
IF(AV) (A)
1.42
a = 3 2.5 2 1.57
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.12 Maximumpermissiblejunctiontemperature
as a function of reverse voltage.
handbook, halfpage
200
0 2000
0
MBK457
1000
100
V (V)
R
Tj
( C)
o
UV
DGJKM
BYD57D to M
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.13 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
024 86
1
2
3
4
I
F
(A)
V (V)
F
MSA963
1999 Nov 11 9
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
BYD57U and V
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
01234
4
3
1
0
2
MGM270
IF
(A)
VF (V)
VR=V
RRMmax.
Fig.15 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
2000
103
MGC532
102
10
1100 Tj ( C)
o
IR
(µA)
f = 1 MHz; Tj=25°C.
Fig.16 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGC524
10 102103
1
102
10
Cd
(pF)
VR (V)
MSB213
4.5
2.5
1.25
50
50
Fig.17 Printed-circuit board for surface mounting.
Dimensions in mm.
1999 Nov 11 10
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.18 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
Fig.19 Reverse recovery definitions.
n
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1999 Nov 11 11
Philips Semiconductors Product specification
Ultra-fast soft-recovery
controlled avalanche rectifiers BYD57 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD87
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 68
Philips Semiconductors – a world wide company
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilips Development Corporation,SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands 135002/04/pp12 Date of release: 1999 Nov 11 Document order number: 9397 750 06267
