1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
44 01.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCW 67, BCW 68 General Purpose Transistors
PNP Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCW 67 BCW 68
Collector-Emitter-voltage B open - VCE0 32 V 45 V
Collector-Base-voltage E open - VCB0 45 V 60 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (DC) - IC800 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 1000 mA
Base current – Basis-Spitzenstrom - IB100 mA
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, - VCB = 32 V BCW 67 - ICB0 – – 20 nA
IE = 0, - VCB = 32 V, Tj = 150/C- I
CB0 – – 20 :A
IE = 0, - VCB = 45 V BCW 68 - ICB0 – – 20 nA
IE = 0, - VCB = 45 V, Tj = 150/C- I
CB0 – – 20 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, - VEB = 4 V - IEB0 – – 20 nA
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
45
01.11.2003
General Purpose Transistors BCW 67, BCW 68
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 100 mA, - IB = 10 mA - VCEsat – – 300 mV
- IC = 500 mA, - IB = 50 mA - VCEsat – – 700 mV
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 100 mA, - IB = 10 mA - VBEsat – – 1.25 V
- IC = 500 mA, - IB = 50 mA - VBEsat – – 2 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 10 V
- IC = 100 : mA
BCW 67A / 68F hFE 35 – –
BCW 67B / 68G hFE 50 – –
BCW 67C / 68H hFE 80 – –
- VCE = 1 V
- IC = 10 mA
BCW 67A / 68F hFE 75 – –
BCW 67B / 68G hFE 120 – –
BCW 67C / 68H hFE 180 – –
- VCE = 1 V
- IC = 100 mA
BCW 67A / 68F hFE 100 160 250
BCW 67B / 68G hFE 160 250 400
BCW 67C / 68H hFE 250 350 630
- VCE = 2 V
- IC = 500 mA
BCW 67A / 68F hFE 35 – –
BCW 67B / 68G hFE 60 – –
BCW 67C / 68H hFE 100 – –
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 50 mA, f = 100 MHz fT– 200 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 6 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 – 60 pF –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary NPN-transistors
Empfohlene komplementäre NPN-Transistoren BCW 65, BCW 66
Marking – Stempelung BCW 67A = DA BCW 67B = DB BCW 67C = DC
BCW 68F = DF BCW 68G = DG BCW 68H = DH
