(E2) 2 (C1) 3 94 80 0 .2 5 12 11 2 1 2-O 5.5 12 7 6 3 12 (C2E1) 1 7(G2) 6(E2) 11 4 12 3-M5 23 23 7 16 7 17 4-fasten tab #110 t= 0.5 16 .0 30 +1 - 0 .5 8 16 35 6 23 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 50A,= 15V . . ate-mitter hreshold oltage = 5V,= 50mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime eak orward oltage everse ecovery ime = 10V,= 0V,= 1MH 4,200 = 600V L= 12 G= 20 = 15V . . . . . . . . orward urrent . . . = 50A,= 0V . . = 50A,= -10V i/t= 100A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case http://store.iiic.cc/ Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 100 15V Collector Current I C (A) 75 9V 50 8V 25 7V 0 0 2 TC=25 16 I C=25A 10V 12V 4 6 8 Collector to Emitter Voltage V CE (V) VGE =20V 14 50A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 10 8 6 4 2 8 12 16 14 600 12 500 10 400 8 VCE =600V 300 6 400V 200 4 200V 100 2 0 0 50 100 150 200 250 300 Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Fig.6- Collector Current vs. Switching Time (Typical) 350 1.4 VGE=0V f=1MHZ TC=25 10000 Cies 5000 Capacitance C (pF) 700 Gate to Emitter Voltage V GE (V) 20000 2000 1000 Coes 500 200 Cres 100 VCC=600V R G=20 VGE=15V TC=25 1.2 tOFF 1 0.8 tf 0.6 0.4 tON 0.2 50 20 16 RL=12 TC=25 0 20 Switching Time t (s) Collector to Emitter Voltage V CE (V) 12 4 20 tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 0 0 Collector to Emitter Voltage VCE (V) 10 20 30 Collector Current IC (A) http://store.iiic.cc/ 40 50 Gate to Emitter Voltage V GE (V) 50A 0 16 800 100A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 I C=25A 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 16 100A Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) (Typical) 10 100 VCC=600V IC=50A VGE=15V TC=25 TC=25 TC=125 90 toff 2 ton 1 tr 80 Forward Current I F (A) Switching Time t (s) 5 0.5 tf 0.2 70 60 50 40 30 20 0.1 0.05 10 5 10 20 50 100 200 0 300 0 1 2 Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area I F=50A TC=25 200 4 500 R G=20 V GE=15V TC125 200 trr 100 Collector Current I C (A) 100 50 20 10 5 50 20 10 5 2 1 0.5 I RrM 2 1 0.2 0 50 100 150 200 250 0.1 300 0 400 800 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/s) fig11-Tansient Thermal Impedance 5 Tansient Thermal Impedance Rth (J-C) (C/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 500 3 Forward Voltage VF (V) Series Gate Impedance RG () 2 1 FRD -1 5x10 IGBT -1 2x10 -1 10 -2 5x10 -2 2x10 -2 Tc=25 10 -3 5x10 1 Shot -3 2x10 -5 10 -4 10 -3 10 -2 10 -1 10 Time t s http://store.iiic.cc/ 1 10 1 1600