MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM150DX-24A Collector current IC ............................... 150A Collector-emitter voltage VCES .............. 1 2 0 0 V Maximum junction temperature T jmax ... 1 5 0 C Flat base Type Copper base plate (non-plating) RoHS Directive compliant Dual (Half-Bridge) UL Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION SECTION A INTERNAL CONNECTION Es2 (39) Tolerance otherwise specified Division of Dimension t=0.8 Tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 G2 (38) E2 (47) C1 (48) Tr2 C2E1 (24) Di2 C2E1 (23) Di1 Tr1 Th : Dimensions with a Tolerance of TH1 (1) 1 NTC TERMINAL Dimension in mm TH2 (2) G1 (15) Es1 (16) Cs1 (22) Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 C, unless otherwise specified) INVERTER PART IGBT/FWDi Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited 20 V IC Item DC, TC=91 C Collector current ICRM Ptot IE IERM (Note.1) (Note.2, 4) Emitter current 150 (Note.3) Pulse, Repetitive Total power dissipation (Note.1) Conditions TC=25 C (Note.2, 4) 960 TC=25 C (Note.2, 4) 150 (Note.3) Pulse, Repetitive A 300 W A 300 MODULE Symbol Item Conditions Rating Unit Tjmax Maximum junction temperature - 150 TCmax Maximum case temperature (Note.2) 125 Tjop Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min C 2500 C V ELECTRICAL CHARACTERISTICS (T j =25 C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 A VGE(th) Gate-emitter threshold voltage IC=15 mA, VCE=10 V 6 7 8 V T j =25 C - 2.0 2.6 T j =125 C - 2.2 - - 1.9 - - - 23 - - 2.0 - - 0.45 - 675 - - - 130 VCEsat (Terminal) VCEsat (Chip) Cies Collector-emitter saturation voltage Collector-emitter saturation voltage (Note.5) , VGE=15 V IC=150 A, VGE=15 V (Note.5) Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time (Note.1) VEC (Terminal) IC=150 A Emitter-collector voltage VCE=10 V, G-E short-circuited VCC=600 V, IC=150 A, VGE=15 V VCC=600 V, IC=150 A, VGE=15 V, RG=2.2 , Inductive load Emitter-collector voltage - 100 - 450 - - 600 , T j =25 C - 2.6 3.4 G-E short-circuited T j =125 C - 2.16 - (Note.5) - 2.5 - IE=150 A (Note.5) (Note.1) VEC (Chip) (Note.1) trr - IE=150 A, G-E short-circuited V nF nC ns V V Reverse recovery time VCC=600 V, IE=150 A, VGE=15 V, - - 150 ns Reverse recovery charge RG=2.2 , Inductive load - 6.0 - C Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 7.0 - Eoff Turn-off switching energy per pulse VGE=15 V, RG=2.2 , T j =125 C, - 15 - Reverse recovery energy per pulse Inductive load Main terminals-chip, per switch, (Note.2) TC=25 C (Note.2) Per switch, TC=25 C - 15 - mJ - 1.6 - m - 0 - Qrr Err (Note.1) (Note.1) R CC'+EE' Internal lead resistance rg Internal gate resistance 2 mJ Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note.2) R25 Zero-power resistance TC=25 C R/R Deviation of resistance TC=100 C, R100=493 B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 C (Note.6) (Note.2) Max. Unit Min. Typ. 4.85 5.00 5.15 k -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Rth(j-c)D Rth(c-s) Conditions (Note.2) Contact thermal resistance (Note.2) Limits Min. Typ. Max. Unit Junction to case, per Inverter IGBT - - 0.13 K/W Junction to case, per Inverter FWDi Case to heat sink, per 1 module, (Note.7) Thermal grease applied - - 0.23 K/W - 15 - K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Item Conditions Mounting torque Limits Min. Typ. Max. Main terminals M 6 screw 3.5 4.0 4.5 Mounting to heat sink M 5 screw 2.5 3.0 3.5 Terminal to terminal 11.55 - - Terminal to base plate 12.32 - - ds Creepage distance da Clearance m Weight - ec Flatness of base plate On the centerline X, Y Unit N*m mm Terminal to terminal 10.00 - - Terminal to base plate 10.85 - - - 330 - g 0 - +100 m (Note.8) mm Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating. Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. R 1 1 Note.6: B ( 25 / 50) = ln( 25 ) /( - ) R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [C]+273.15=323.15 [K] Note.7: Typical value is measured by using thermally conductive grease of =0.9 W/(m*K). Note.8: Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side -:Concave +:Convex Note.9: JAPAN Electronics and Information Technology Industries Association (JEITA) standard, "ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)". 3 Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS (T a =25 C) Symbol Item Conditions Limits Min. Typ. Max. Unit VCC (DC) Supply voltage Applied across C1-E2 - 600 800 V VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V RG External gate resistance Per switch 2.0 - 21 CHIP LOCATION (Top view) Dimension in mm, tolerance: 1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip. 4 Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS 48 22 VGE=15 V IC 15 V 23/24 IC 38 Tr1 23/24 Shortcircuited IE 38 38 Tr2 47 39 47 39 Di1 Di2 V C E s a t test circuit VEC test circuit v GE iE 90 % 0V iE 0 Q rr =0.5xI rr xt r r t Load t rr IE + VCC iC 0A -VGE V 16 23/24 47 39 47 39 15 Shortcircuited VGE=15 V 38 IE 16 V 23/24 48 Short- 22 circuited 15 16 Shortcircuited 48 Short- 22 circuited 15 16 V 48 Short- 22 circuited t 90 % +VGE 0V RG Irr VCE VGE iC -VGE 10% 0A tr t d( o n) tf td(off) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE 0 iC iC ICM VCC 0.1xICM 0.1xVCC ICM VCC t 0 0.5xI r r 0.1xVCC IEM vEC vCE 0.02xICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0A t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) 5 Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 C VGE=15 V 4 300 15 V VGE=20 V 13 V 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURRENT IC (A) 250 12 V 150 11 V 100 10 V 50 T j =125 C 3 2 T j =25 C 1 9 V 0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 50 VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 150 200 250 300 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) T j =25 C G-E short-circuited 10 1000 IE (A) IC=300 A 8 IC=150 A 6 IC=60 A EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 100 COLLECTOR CURRENT 4 T j =125 C 100 T j =25 C 2 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 20 0 VGE (V) 1 2 EMITTER-COLLECTOR VOLTAGE 6 3 4 VEC (V) Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=2.2 , INDUCTIVE LOAD, T j =125 C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=150 A, VGE=15 V, INDUCTIVE LOAD, T j =125 C 1000 1000 td(off) tf tf SWITCHING TIME (ns) SWITCHING TIME (ns) td(off) 100 td(on) tr 10 100 td(on) tr 10 1 1 10 100 1000 COLLECTOR CURRENT 1 IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=2.2 , INDUCTIVE LOAD, PER PULSE, T j =125 C 100 RG () HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=150 A, VGE=15 V, INDUCTIVE LOAD, PER PULSE, T j =125 C 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 100 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 10 EXTERNAL GATE RESISTANCE 10 Eon Eoff Err 1 Eon Eoff 10 Err 1 10 100 1000 1 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 7 100 RG () Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=15 V, RG=2.2 , INDUCTIVE LOAD, T j =25 C CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 C 100 1000 Cies 100 trr t r r (ns), I r r (A) CAPACITANCE (nF) Irr 10 Coes 1 10 Cres 0.1 1 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE 10 EMITTER CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) IC=150 A, T j =25 C Single pulse, TC=25C Zth(j-c) 15 NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) VCC=400 V GATE-EMITTER VOLTAGE 1000 IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC=600 V 10 5 0 0 100 VCE (V) 200 400 GATE CHARGE 600 800 1000 QG (nC) 8 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 R t h ( j - c ) Q =0.13 K/W, R t h ( j - c ) D =0.23 K/W TIME (S) Feb. 2011 MITSUBISHI IGBT MODULES CM150DX-24A HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. *Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 9 Feb. 2011