WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, (Package 511) Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Commercial, Industrial and Military Temperature Ranges Weight - WS1M32V-XG3X - 20 grams typical TTL Compatible Inputs and Outputs *This product is under development, is not qualified or characterized and is subject to change without notice. PIN CONFIGURATION FOR WS1M32V-XG3X PIN DESCRIPTION I/O0-31 A0-18 WE#1-4 CS#1-2 OE#1-4 VCC GND NC GND I/O31 I/O30 I/O29 I/O28 I/O27 I/O26 I/O25 I/O24 NC NC NC I/O23 I/O22 I/O21 I/O20 I/O19 I/O18 I/O17 I/O16 VCC TOP VIEW 11 10 9 8 7 6 5 4 3 2 1 84 83 82 81 80 79 78 77 76 75 VCC A0 A1 A2 A3 A4 A5 A6 OE#1 OE#2 OE#3 OE#4 NC A7 A8 A9 A10 A11 A12 A13 GND 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 GND NC NC NC NC NC NC NC NC WE#4 WE#3 WE#2 WE#1 NC NC A18 A17 A16 A15 A14 VCC Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enables +3.3V Power Supply Ground Not Connected BLOCK DIAGRAM OE#1 WE#1 OE#2 WE#2 OE#3 WE#3 OE#4 WE#4 2Mxx88 512K 2Mxx88 512K 2Mxx88 512K 512K x 8 CS#1 A0-18 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 2M x 8 512K 512K x 8 512K x 8 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 CS#1 NC CS#2 I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 GND 512K x 8 8 8 8 8 CS#2 I/O0-7 I/O8-15 I/O16-23 I/O24-31 Note: CS#1& CS#2 are used as bank select The WEDC 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form. 1.146" Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS# OE# WE# Mode Data I/O Power TA -55 125 C H X X Standby High Z Standby Active Operating Temperature TSTG -65 +150 C L L H Read Data Out Signal Voltage Relative to GND VG -0.5 4.6 V L X L Write Data In Active Junction Temperature TJ 150 C L H H Out Disable High Z Active 4.6 V Storage Temperature Supply Voltage VCC -0.5 CAPACITANCE RECOMMENDED OPERATING CONDITIONS Parameter TA = +25C Symbol Min Max Unit Symbol Conditions Max Unit Supply Voltage VCC 3.0 3.6 V OE#1-4 capacitance COE VIN = 0V, f = 1.0MHz 20 pF Input High Voltage VIH 2.2 VCC + 0.3 V WE#1-4 capacitance CWE VIN = 0V, f = 1.0MHz 20 pF Input Low Voltage VIL -0.3 +0.8 V CS#1-2 capacitance CCS VIN = 0V, f = 1.0MHz 50 pF Data I/O capacitance CI/O VI/O = 0V, f = 1.0MHz 20 pF Address input capacitance CAD VIN = 0V, f = 1.0MHz 70 pF Parameter This parameter is guaranteed by design, but not tested. DC CHARACTERISTICS VCC = 3.3V 0.3V, -55C TA +125C Parameter Symbol Conditions Max Units Input Leakage Current ILI VIN = GND to VCC 10 A Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 A ICC x 32 CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6V 520 mA Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6V 400 mA Output Low Voltage VOL IOL = 4.0mA 0.4 Output High Voltage VOH IOH = -4.0mA Operating Supply Current (x 32 Mode) Min 2.4 V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V Contact Factory for low power option. Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY AC CHARACTERISTICS VCC = 3.3V, GND = 0V, -55C TA +125C Parameter Symbol Read Cycle Read Cycle Time tRC Address Access Time tAA Output Hold from Address Change tOH Chip Select Access Time tACS -17 Min -20 Max 17 Min -25 Max 20 Max 25 17 0 Min ns 20 0 25 ns 25 ns 12 ns 0 17 Units ns 20 Output Enable to Output Valid tOE Chip Select to Output in Low Z tCLZ1 1 1 1 Output Enable to Output in Low Z tOLZ1 0 0 0 Chip Disable to Output in High Z tCHZ1 12 12 12 ns tOHZ1 12 12 12 ns Output Disable to Output in High Z 1. This parameter is guaranteed by design but not tested. 10 10 ns ns AC CHARACTERISTICS VCC = 3.3V, GND = 0V, -55C TA +125C Parameter Symbol Write Cycle -17 Min -20 Max Min -25 Max Min Max Units Write Cycle Time tWC 17 20 25 ns Chip Select to End of Write tCW 15 15 17 ns Address Valid to End of Write tAW 15 15 17 ns Data Valid to End of Write tDW 11 12 13 ns Write Pulse Width tWP 15 15 17 ns Address Setup Time tAS 2 2 2 ns Address Hold Time tAH 0 0 0 ns Output Active from End of Write tOW1 2 3 4 Write Enable to Output in High Z tWHZ1 Data Hold Time 1. This parameter is guaranteed by design but not tested. tDH 9 0 Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level IOL ns Typ VIL = 0, VIH = 2.5 5 1.5 1.5 Unit V ns V V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. VZ 1.5V (Bipolar Supply) D.U.T. 0 ns AC TEST CONDITIONS Current Source Ceff = 50 pf 13 0 AC TEST CIRCUIT ns 11 IOH Current Source Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY TIMING WAVEFORM - READ CYCLE tRC ADDRESS tRC tAA ADDRESS CS# tAA tACS tCHZ tOH tCLZ DATA I/O PREVIOUS DATA VALID DATA VALID OE# tOE READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH) tOHZ tOLZ DATA I/O HIGH IMPEDANCE DATA VALID READ CYCLE 2 (WE# = VIH) WRITE CYCLE - WE# CONTROLLED tWC ADDRESS tAW tAH tCW CS# tAS tWP WE# tOW tDW tWHZ DATA I/O tDH DATA VALID WRITE CYCLE 1, WE# CONTROLLED WRITE CYCLE - CS# CONTROLLED tWC ADDRESS tAW tAS tAH tCW CS# tWP WE# tDW DATA I/O tDH DATA VALID WRITE CYCLE 2, CS# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY PACKAGE 511 - 84 LEAD, CERAMIC QUAD FLAT PACK (G3) 4.29 (0.169) 0.28 (0.011) 4.12 (0.162) 0.20 (0.008) 30.23 (1.190) 0.25 (0.010) SQ 27.18 (1.070) 0.25 (0.010) SQ 0.25 (0.010) 0.03 (0.002) R 0.127 (0.005) MIN 29.11 (1.146) 0.25 (0.010) 0.19 (0.008) 0.06 (0.003) 1/7 1.02 (0.040) 0.12 (0.005) DETAIL A 1.27 (0.050) TYP 0.38 (0.015) 0.05 (0.002) SEE DETAIL "A" 0.27 (0.011) 0.04 (0.001) 25.40 (1.000) TYP The Microsemi 84 lead G3 CQFP fills the same fit and function as the JEDEC 84 lead CQFJ or 84 PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form. 1.146" ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY ORDERING INFORMATION W S 1M32 V - XX G3 X X MICROSEMI CORPORATION SRAM ORGANIZATION, two banks of 512Kx32 User configurable as 2Mx16 or 4Mx8 Low Voltage Supply 3.3V 10% ACCESS TIME (ns) PACKAGE TYPE: G3 = 28 mm CQFP (Package 511) DEVICE GRADE: M = Military C = Commercial I = Industrial -55C to +125C -40C to +85C 0 to +70C LEAD FINISH: Blank = Gold plated leads A = Solder dip leads Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com WS1M32V-XG3X PRELIMINARY Document Title 1Mx32 SRAM 3.3V MODULE Revision History Rev # History Release Date Status Rev 6 Changes (Pg. 1-7) April 2011 Preliminary 6.1 Change document layout from White Electronic Designs to Microsemi 6.2 Add document Revision History page Microsemi Corporation reserves the right to change products or specifications without notice. April 2011 Rev. 6 (c) 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com