WS1M32V-XG3X
PRELIMINARY*
April 2011 © 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
1Mx32 SRAM 3.3V MODULE
FEATURES
Access Times of 17, 20, 25ns
84 lead, 28mm CQFP, (Package 511)
Organized as two banks of 512Kx32, User Confi gurable as
2Mx16 or 4Mx8
Commercial, Industrial and Military Temperature Ranges
TTL Compatible Inputs and Outputs
3.3V Power Supply
Low Power CMOS
Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
Weight - WS1M32V-XG3X - 20 grams typical
* This product is under development, is not qualifi ed or characterized and is subject to change without
notice.
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
9
V
CC
A0
A1
A2
A3
A4
A5
A6
OE#1
OE#2
OE#3
OE#4
NC
A7
A8
A9
A10
A11
A12
A13
GND
V
CC
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
CS#1
NC
CS#2
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
GND
GND
NC
NC
NC
NC
NC
NC
NC
NC
WE#4
WE#3
WE#2
WE#1
NC
NC
A18
A17
A16
A15
A14
V
CC
GND
I/O31
I/O30
I/O29
I/O28
I/O27
I/O26
I/O25
I/O24
NC
NC
NC
I/O23
I/O22
I/O21
I/O20
I/O19
I/O18
I/O17
I/O16
V
CC
8 7 6 5 4 3 1 84 83 82 81 80 79 78 772
37 38 39 40 41 42 43 45 46 47 48 49 50 51 52 5344
76 75
11 10
33 34 35 36
1.146"
PIN CONFIGURATION FOR WS1M32V-XG3X PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE#1-4 Write Enables
CS#1-2 Chip Selects
OE#1-4 Output Enables
VCC +3.3V Power Supply
GND Ground
NC Not Connected
TOP VIEW
BLOCK DIAGRAM
8
I/O0-7
CS#1
I/O8-15
CS#2
I/O16-23 I/O24-31
A0-18
WE#1
8
2M x 8
8
512K x 8
8
512K x 8
2M x 8
512K x 8
512K x 8
2M x 8
512K x 8
512K x 8
2M x 8
512K x 8
512K x 8
OE#1 WE#2 OE#2 WE#3 OE#3 WE#4 OE#4
Note: CS#1& CS#2 are used as bank select
The WEDC 84 lead G3 CQFP fi lls the same fi t and function as the JEDEC 84 lead CQFJ or 84
PLCC. But the G3 has the TCE and lead inspection advantage of the CQFP form.
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
TRUTH TABLE
CS# OE# WE# Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active
CAPACITANCE
TA = +25°C
Parameter Symbol Conditions Max Unit
OE#1-4 capacitance COE VIN = 0V, f = 1.0MHz 20 pF
WE#1-4 capacitance CWE VIN = 0V, f = 1.0MHz 20 pF
CS#1-2 capacitance CCS VIN = 0V, f = 1.0MHz 50 pF
Data I/O capacitance CI/O VI/O = 0V, f = 1.0MHz 20 pF
Address input
capacitance
CAD VIN = 0V, f = 1.0MHz 70 pF
This parameter is guaranteed by design, but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 4.6 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 4.6 V
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 3.0 3.6 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.3 +0.8 V
DC CHARACTERISTICS
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter Symbol Conditions Min Max Units
Input Leakage Current ILI VIN = GND to VCC 10 μA
Output Leakage Current ILO CS# = VIH, OE# = VIH, VOUT = GND to VCC 10 μA
Operating Supply Current (x 32 Mode) ICC x 32 CS# = VIL, OE# = VIH, f = 5MHz, VCC = 3.6V 520 mA
Standby Current ISB CS# = VIH, OE# = VIH, f = 5MHz, VCC = 3.6V 400 mA
Output Low Voltage VOL IOL = 4.0mA 0.4 V
Output High Voltage VOH IOH = -4.0mA 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Contact Factory for low power option.
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
IOH
Current Source
D.U.T.
Ceff = 50 pf
IOL
VZ 1.5V
(Bipolar Supply)
Current Source
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 2.5 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC CHARACTERISTICS
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol -17 -20 -25 Units
Read Cycle Min Max Min Max Min Max
Read Cycle Time tRC 17 20 25 ns
Address Access Time tAA 17 20 25 ns
Output Hold from Address Change tOH 000ns
Chip Select Access Time tACS 17 20 25 ns
Output Enable to Output Valid tOE 10 10 12 ns
Chip Select to Output in Low Z tCLZ1111ns
Output Enable to Output in Low Z tOLZ1000ns
Chip Disable to Output in High Z tCHZ112 12 12 ns
Output Disable to Output in High Z tOHZ112 12 12 ns
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
VCC = 3.3V, GND = 0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol -17 -20 -25 Units
Write Cycle Min Max Min Max Min Max
Write Cycle Time tWC 17 20 25 ns
Chip Select to End of Write tCW 15 15 17 ns
Address Valid to End of Write tAW 15 15 17 ns
Data Valid to End of Write tDW 11 12 13 ns
Write Pulse Width tWP 15 15 17 ns
Address Setup Time tAS 222ns
Address Hold Time tAH 000ns
Output Active from End of Write tOW1234ns
Write Enable to Output in High Z tWHZ191113ns
Data Hold Time tDH 000ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
ADDRESS
DATA I/O
WRITE CYCLE 2, CS# CONTROLLED
tAW
tAS tCW tAH
tWP
tDH
tDW
tWC
CS#
WE#
DATA VALID
WRITE CYCLE – CS# CONTROLLED
TIMING WAVEFORM – READ CYCLE
ADDRESS
DATA I/O
READ CYCLE 2 (WE# = VIH)
tAA
tACS
tOE
tCLZ
tOLZ
tOHZ
tRC
DATA VALID
HIGH IMPEDANCE
CS#
OE#
tCHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS# = OE# = VIL, WE# = VIH)
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
ADDRESS
DATA I/O
WRITE CYCLE 1, WE# CONTROLLED
tAW
tCW tAH
tWP
tDW
tWHZ
tAS
tOW
tDH
tWC
DATA VALID
CS#
WE#
WRITE CYCLE – WE# CONTROLLED
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
30.23 (1.190) ± 0.25 (0.010) SQ
27.18 (1.070) ± 0.25 (0.010) SQ
1.27 (0.050)
TYP
25.40 (1.000) TYP
0.27 (0.011) ±
0.04 (0.001)
SEE DETAIL “A”
DETAIL A
1/7
29.11 (1.146) ±
0.25 (0.010) 0.19 (0.008) ±
0.06 (0.003)
0.25 (0.010) ±
0.03 (0.002)
4.29 (0.169) ±
0.28 (0.011)
4.12 (0.162) ± 0.20 (0.008)
R 0.127
(0.005) MIN
1.02 (0.040) ±
0.12 (0.005)
0.38 (0.015) ±
0.05 (0.002)
1.146"
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 511 – 84 LEAD, CERAMIC QUAD FLAT PACK (G3)
The Microsemi 84 lead G3 CQFP fi lls the same fi t and
function as the JEDEC 84 lead CQFJ or 84 PLCC. But
the G3 has the TCE and lead inspection advantage of
the CQFP form.
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
ORDERING INFORMATION
W S 1M32 V - XX G3 X X
MICROSEMI CORPORATION
SRAM
ORGANIZATION, two banks of 512Kx32
User confi gurable as 2Mx16 or 4Mx8
Low Voltage Supply 3.3V ± 10%
ACCESS TIME (ns)
PACKAGE TYPE:
G3 = 28 mm CQFP (Package 511)
DEVICE GRADE:
M = Military -55°C to +125°C
C = Commercial -40°C to +85°C
I = Industrial 0° to +70°C
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
WS1M32V-XG3X
PRELIMINARY
April 2011 © 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 6 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
Document Title
1Mx32 SRAM 3.3V MODULE
Revision History
Rev # History Release Date Status
Rev 6 Changes (Pg. 1-7)
6.1 Change document layout from White Electronic Designs to Microsemi
6.2 Add document Revision History page
April 2011 Preliminary
