2N3773 NPN PLANAR SILICON TRANSISTOR
A UDIO POWER A MPLIFIER
DC TO DC CONVERTER
TO-3
! High Current Capability
! High Power Dissipation
A BSO LUTE MA XI MU M RATING (Ta=25℃
℃℃
℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
IC
PC
T
j
Tstg
160
140
7
16
150
200
-50~150
V
V
V
A
W
℃
℃℃
℃
℃
℃℃
℃
ELECTRICAL CHARACTERISTI CS ( Ta= 25℃
℃℃
℃)
Characterristic Symbol Test Condition Min Typ Max Unit
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Bre akdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
V
CE(sat)
I
C=10 mA IE=0
I
C=5 mA RBE=∞
I
E=5 mA IC=0
V
CB=30V IE=0
V
EB=4V IC=0
V
CE=5V IC=8A
I
C=8A IB=0.8A
100
100
6
15
0.1
0.1
60
1.0
V
V
V
mA
mA
V
