RClamp0512TQ
Final Datasheet Rev 6
December 17, 2015
www.semtech.com Page 1
Semtech
RClamp0512TQ
PROTECTION PRODUCTS
Features
• TransientProtectionto
IEC61000-4-2(ESD)30kV(Air),30kV(Contact)
IEC61000-4-4(EFT)4kV(5/50ns)
IEC61000-4-5(Lightning)20A(8/20µs)
ISO-10605(ESD)30kV(Air),30kV(Contact)
• QualiedtoAEC-Q100,Grade1
• VerySmallPCBArea:0.6mm2
• ProtectsTwoHigh-SpeedDataLines
• WorkingVoltage:5V
• LowCapacitance:3pFMaximum
• DynamicResistance:0.075Ohms(Typ)
• Solid-StateSilicon-AvalancheTechnology
Mechanical Characteristics
• SGP1006N3TPackage
• Pb-Free,HalogenFree,RoHS/WEEECompliant
• NominalDimensions:1.0x0.60x0.40mm
• LeadFinish:NiAu
• MoldingCompoundFlammabilityRating:UL94V-0
• Marking:MarkingCode+DotMatrixDateCode
• Packaging:TapeandReel
Applications
• AutomotiveApplications
• IndustrialEquipment
• IntegratedMagnetics/RJ-45Connectors
• 10/100/1000Ethernet
• 2.5GbE
• USB2.0
Nominal Dimensions in mm
Nominal Dimensions Functional Schematic
Low Capacitance RailClamp®
2-Line Surge and ESD Protection
Device Schematic
Description
RClamp®0512TQisspecicallydesignedtoprovide
secondarysurgeandESDprotectiononhigh-speed
ports.RClamp0512TQintegrateslowcapacitance,
surge-ratedsteeringdiodeswithahighpowertransient
voltagesuppressor(TVS).TheTVSutilizessnap-back
or“crow-bar”technologytominimizedeviceclamping
voltageandfeatureshighsurgecurrentcapabilityof20A
(tp=8/20us).ESDcharacteristicsarehighlightedbyhigh
ESDwithstandvoltage(+/-30kVperIEC61000-4-2)and
extremelylowdynamicresistance(0.075Ohmstypical).
Eachdevicewillprotecttwolinesoperatingat5volts
andarequaliedtoAEC-Q100,Grade1(-40to+125oC)
forautomotiveapplications.
RClamp0512TQisina3-pinSGP1006N3Tpackage.It
measures1.0x0.6mmwithanominalheightofonly
0.4mm.Theleadsarenishedwithlead-freeNiAu.
Theow-throughpackagedesignsimpliesPCBlayout.
1.00
0.40
0.60
0.70
12
12
3
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 2
Semtech
Parameter Symbol Conditions Min. Typ. Max. Units
ReverseStand-OVoltage VRWM
-40OCto125OC
Betweenanytwopins 5 V
ReverseBreakdownVoltage VBR
It=10mA,
Pin1or2toPin3 -40OCto125OC6.5 9.5 11.5 V
HoldingCurrent IHT=25OC75 150 250 mA
ReverseLeakageCurrent IRVRWM=5V T=25OC0.01 0.100 μA
T=125OC0.03 0.250 μA
ClampingVoltage(3) VC
IPP=20A,tp=1.2/50µs,
Pin1or2toPin3 5 8.5 V
ESDClampingVoltage(4) VC
IPP=4A,tp=0.2/100ns(TLP)
Pin1or2toPin3 4.3 V
ESDClampingVoltage(4) VC
IPP=16A,tp=0.2/100ns(TLP)
Pin1or2toPin3 5.2 V
DynamicResistance(4),(5) RDYN
tp=0.2/100ns(TLP)
Pin1or2toPin3 0.075 Ohms
JunctionCapacitance CJ
VR=0V,f=1MHz
Pin1or2toPin3 T=25OC2 3 pF
VR=0V,f=1MHz
Pin1toPin2 T=25OC1.1 2 pF
Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
(2): ESD Gun return path to Horizontal Coupling Plane (HCP); Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW
(3): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is dened as the peak voltage
across the device after the device snaps back to a conducting state.
(4): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, ITLP and VTLP averaging window: t1 = 70ns to t2 = 90ns.
(5): Dynamic resistance calculated from ITLP = 4A to ITLP = 16A
Absolute Maximum Ratings
Electrical Characteristics (T=25OC unless otherwise specied)
Rating Symbol Value Units
PeakPulsePower(tp=1.2/50µs) PPK 170 W
PeakPulseCurrent(tp=1.2/50µs) IPP 20 A
ESDperIEC61000-4-2(Contact)(1)
ESDperIEC61000-4-2(Air)(1) VESD
±30
±30 kV
ESDperISO-10605(Contact)(2)
ESDperISO-10605(Air)(2) VESD
±30
±30 kV
OperatingTemperature TJ-40to+125 OC
StorageTemperature TSTG -55to+150 OC
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
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Semtech
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve
Clamping Characteristic (20A, 1.2/50us Pulse)
ESD Clamping (+8kV Contact per IEC 61000-4-2)
0
5
10
15
-10 0 10 20 30 40 50
Clamping Votlage (V)
Time (us)
Waveform Parameters:
1.2/50µs (Voltage) / 8/20µS
(Current) combination waveform
with 8Ωsource impedance.
Injected current = 20A
Pin 1 or Pin 2 to Pin 3
TA = 25
O
C
0
10
20
30
40
50
60
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
Measuredwith50Ohmscopeinput
impedance,2GHzbandwidth.Corrected
for50Ohm,26dBattenuator.ESDgun
returnpathconnectedtoESDgroundplane.
-5
0
5
10
15
20
25
30
024681012
TLP Current (A)
Clamping Voltage (V)
TransmissionLinePulseTest
(TLP)Settings:
t
p
=100ns,t
r
=0.2ns,
I
TLP
andV
TLP
averagingwindow:
t
1
=70nstot
2
=90ns
Pin1orPin2toPin3
-30
-25
-20
-15
-10
-5
0
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
Measuredwith50Ohmscopeinput
impedance,2GHzbandwidth.Corrected
for50Ohm,26dBattenuator.ESDgun
returnpathconnectedtoESDgroundplane.
0.01
0.1
1
10
0.1 1 10 100 1000
PeakPulsePower‐ PPP (kW)
PulseDuration‐ tp(µs)
DR040412‐170
T
A
=25
O
C
0
20
40
60
80
100
120
0 25 50 75 100 125 150
%ofRatedPowerorI
PP
AmbientTemperature‐ T
A
(
O
C)
DR040512:25:125:150
TLP IV Curve (Positive Pulse)
ESD Clamping (-8kV Contact per IEC 61000-4-2)
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
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Semtech
Typical Characteristics
ESD Clamping (+15kV Contact per ISO-10605 150pF, 330W) ESD Clamping (-15kV Contact per ISO-10605 150pF, 330W)
ESD Clamping (+15kV Contact per ISO-10605 330pF, 330W)
ESD Clamping (+15kV Contact per ISO-10605 330pF, 2kW)
-10
0
10
20
30
40
50
60
70
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
330pFand330Ohmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
-10
0
10
20
30
40
50
60
70
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
330pFand2kOhmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
-50
-40
-30
-20
-10
0
10
20
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
330pFand330Ohmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
-50
-40
-30
-20
-10
0
10
20
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
330pFand2kOhmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
-10
0
10
20
30
40
50
60
70
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
150pFand330Ohmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
-10 0 10 20 30 40 50 60 70 80
Clamping Voltage - V
C
(V)
Time (ns)
150pFand330Ohmwith50Ohmscope
inputimpedance,2GHzbandwidth.
Correctedfor50Ohm,26dBattenuator.
ESDgunreturnpathconnectedto
horizontalcouplingplane.
ESD Clamping (-15kV Contact per ISO-10605 330pF, 330W)
ESD Clamping (+15kV Contact per ISO-10605 330pF, 2kW)
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
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Semtech
Typical Characteristics (Continued)
Capacitance vs. Reverse Voltage Capacitance vs. Temperature
Insertion Loss - S21 Analog Crosstalk
Breakdown Voltage (VBR) vs. Temperature
0
2
4
6
8
10
12
-50 -25 0 25 50 75 100 125 150
Breakdown Voltage - VBR (V)
Temperature (OC)
I
BR
=10mA
-80
-70
-60
-50
-40
-30
-20
-10
0
10 100 1000 10000
Crosstalk- CT (dB)
Frequency (MHz)
‐3
‐2
‐1
0
1 10 100 1000
InsertionLoss‐ IL(dB)
Frequency(MHz)
Pin 1to2
Pin 1to3
Pin2to3
0
0.5
1
1.5
2
2.5
3
0123456
Junction Capacitance - C
J
(pF)
Voltage (V)
f=1MHz
Pin 1to3
Pin2to3
Pin 1to2
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150
Junction Capacitancs - CJ(pF)
Temperature (°C)
VR=0V
VR=5V
f=1MHz
Pin1 or2toPin3
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
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Semtech
Application Information
Device Operation
Thisdeviceutilizesamulti-junctionstructurethatis
designedtoswitchtoalowvoltagestatewhentriggered
byESD,EOS,orothertransientevents.Duringnormal
operation,thedevicewillpresentahigh-impedanceto
thecircuitforvoltageuptotheworkingvoltage(VRWM)of
thedevice.Whenthevoltageacrossthedeviceterminals
exceedsthebreakdownvoltage(VBR),avalanche
breakdownoccursintheblockingjunctioncausingthe
deviceto“snap-back”orswitchtoalowimpedance
on-state.Thishastheadvantageofloweringtheoverall
clampingvoltage(VC)asESDpeakpulsecurrent(IPP)
owsthroughthedevice.Oncethecurrentdecreases
belowtheholdingcurrent(IH),thedevicewillreturntoa
high-impedanceo-state.
Characteristic Curve
VRWM VBR
IR
IPP
VC
“Snap-Back”
IH
VH
Table1-ParameterDenition
Symbol Parameter
VRWM MaximumWorkingVoltage
VBR BreakdownVoltage
VCClampingVoltage
IHHoldingCurrent
IRReverseLeakageCurrent
IPP PeakPulseCurrent
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
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Semtech
Application Information
Figure 1 - 1GbE / 2.5GbE Protection Circuit
1
2
3
4
8
5
6
7
RJ-45
Ethernet PHY
1GbE / 2.5GbE
RClamp0512TQ
RClamp0512TQ
RClamp0512TQ
RClamp0512TQ
1
2
3
1
2
3
1
2
3
1
2
3
intheprotectionpathshouldbeminimizedbylocating
RClamp0512TQasphysicallyclosetothemagneticsas
possible,andpreferablyonthesamesideofthePCB.
Reducingparasiticinductanceisespeciallyimportant
forsuppressingfastrisetimetransientssuchasESDand
EFT.Inductanceinthepathoftheprotectiondevice
increasesthepeakclampingvoltageseenbytheprotect-
eddevice(V=Ldi/dt).Forexample,1nHofinductance
canincreasethepeakclampingvoltageby30Vfora30A
(8kV)ESDpulsewitha1nsrisetime.Dierentialpairsare
routedthrougheachRClamp0512TQatpins1and2.Pin
3ofthedeviceisnotconnected.
PlacingtheprotectiononthePHYsideofthemagnetics
isadvantageousinthatthemagnitudeanddurationof
thesurgeisattenuatedbythetransformerwindings.The
amountofattenuationwillvarybyvendorandcong-
urationofthemagnetics.TheEthernettransformerhas
tobeabletosupporttheimpulsetestswithoutfailure.
AtypicalEthernettransformercanwithstandafew
hundredamperes(tp=8/20us)beforefailureoccurs,but
thisneedstobeveriedbytesting.Alternatively,the
protectioncanbeplacedonthelinesideofthetrans-
former.However,theadditionalprotectionaordedby
thetransformerislost,andtheabilityofthesystemto
withstandhighenergysurgesislimitedtothecapability
oftheprotectiondevice.
Ethernet Protection
Ethernetportsareexposedtoexternaltransientevents
intheformofESD,EFT,lightning,andcabledischarge
events(CDE).Teststandardsthatmodeltheseevents
includeIEC61000-4-2forESD,IEC61000-4-4forEFT,and
IEC61000-4-5andGR-1089forlightning.Anyofthese
eventscancausecatastrophicdamagetothePHYIC.
WhendesigningEthernetprotection,theentiresys-
temmustbeconsidered.Over-voltageeventscanbe
commonmode(withrespecttoground)ordieren-
tial(line-to-line).AnEthernetportincludesinterface
magneticsconsistingoftransformersintegratedwith
commonmodechokes.Thetransformercentertapsare
connectedtogroundviaanRCnetworkor“BobSmith”
termination.Thepurposeofthisterminationistoreduce
commonmodeemissions.Thetransformerprovides
commonmodeisolationtotransientevents,butno
protectionfordierentialsurges.Duringadierential
transientevent,currentwillowthroughthetransform-
er,chargingthewindingsonthelineside.Energyis
transferredtothesecondaryuntilthesurgesubsidesor
thetransformersaturates.
Atypicalprotectionschemewhichutilizesthe
RClamp0512TQisshowninFigure1.Thedevicesare
locatedonthePHYsideofthetransformerwithone
deviceplacedacrosseachlinepair.Parasiticinductance
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 8
Semtech
Application Information
Figure 3 - USB 3.1 Type-A Protection ExampleFigure 2 - USB 3.0 Type-A Protection Example
USB 3.0 - Type A
Host Connector
RClamp0512TQ
RClamp3324T
VBus
D-
D+
SSTX+
SSTX-
SSRX+
SSRX-
GND
GND
Via to Ground
Landing Pad
Device Outline
Trace
uClamp0571P
USB 3.1 - Type A
Host Connector
RClamp0512TQ
VBus
D-
D+
SSTX+
SSTX-
SSRX+
SSRX-
GND
GND
RClamp0561Z
RClamp0561Z
RClamp0561Z
RClamp0561Z
Via to Ground
Landing Pad
Device Outline
Trace
uClamp0571P
RClamp0561Zhasamaximumcapacitanceof0.15pF
allowingittobeusedontransmissionlinesoperatingin
excessof10GHz.Singlelinedevicesmakeiteasierforthe
designertoroutethetracesandmaintainequaldistance
betweenthedierentialpairsformaximumsignalinteg-
rity.
SinglelinedevicessuchasuClamp0571Parerecom-
mendedforsurgeandESDprotectionoftheVBusline.
ThisdevicefeatureshighsurgeandESDcapabilityand
maybeusedon5Vpowerrails.Inpowerdelivery(PD)
applications,higherworkingvoltageTVSdevicemaybe
needed.OptionsexistforESDandsurgeprotectionupto
24V.
Device Placement
Placementoftheprotectioncomponentisacriticalele-
mentforeectiveESDsuppression.TVSdiodesshould
beplacedasclosetotheconnectoraspossible.This
helpsreducetransientcouplingtonearbytraces.
Groundconnectionsshouldbemadedirectlytothe
groundplaneusingmicro-vias.Thisreducesparasitic
inductanceinthegroundpathandminimizestheclamp-
ingvoltageseenbytheprotecteddevice.
USB Interface Protection
RClamp0512TQmaybeusedtoprotectD+andD-linesin
USB2.0,USB3.0,andUSB3.1applications.Ineachcase,
USBD+andD-pinsareroutedthroughRClamp0512TQ
atpin1andpin2.Pin3isconnectedtothegroundplane.
Figures2and3belowareexamplesofprotectingUSB3.0
and3.1Type-Ainterfaces(hostsideshown).
ForUSB3.0applications,RClamp3324Tisrecommended
forprotectingthe5Gb/sSuperSpeedlinepairs.Lines
areroutedthroughthedeviceatpins1-4.Tracesshould
bekeptthesamelengthtoavoidimpedancemismatch.
Groundisconnectedatpins5and6.Thedierential
impedanceofeachpaircanbecontrolledforUSB3.0(85
Ohms+/-15%)whilemaintainingaminimumtrace-to-
traceandtrace-to-padspacing.IndividualPCBdesign
constraintsmaynecessitatedierentspacingortrace
width.Bothgroundpadsshouldbeconnectedforop-
timalperformance.Groundconnectionismadeusing
lledvia-in-pad.Additionalinformationmaybefoundon
thedevicedatasheet.
ForUSB3.1applications,RClamp0561Zisrecommended
forprotectingthe10Gb/sSuperSpeed+linepairs.One
deviceisconnectedbetweeneachlineandground.
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 9
Semtech
Applications Information
Assembly Guidelines
Thesmallsizeofthisdevicemeansthatsomecaremust
betakenduringthemountingprocesstoinsurereliable
solderjoints.ThegureattherightdetailsSemtech’s
recommendedmountingpattern.Recommended
assemblyguidelinesareshowninTable2.Notethat
theseareonlyrecommendationsandshouldserveonly
asastartingpointfordesignsincetherearemanyfactors
thataecttheassemblyprocess.Exactmanufacturing
parameterswillrequiresomeexperimentationtogetthe
desiredsolderapplication.Semtech’srecommended
mountingpatternisbasedonthefollowingdesign
guidelines:
Land Pattern
TherecommendedlandpatternfollowsIPCstandardsandis
designedformaximumsoldercoverage.Detaileddimensions
areshownelsewhereinthisdocument.
Solder Stencil
Stencildesignisoneofthekeyfactorswhichwilldetermine
thevolumeofsolderpastewhichisdepositedontotheland
pad.Thearearatioofthestencilaperturewilldeterminehow
wellthestencilwillprint.Thearearatiotakesintoaccountthe
apertureshape,aperturesize,andstencilthickness.Anarea
ratioof0.70–0.75ispreferredforthesubjectpackage.The
arearatioofarectangularapertureisgivenas:
AreaRatio=(L*W)/(2*(L+W)*T)
Where:
L=ApertureLength
W=ApertureWidth
T=StencilThickness
Semtechrecommendsastencilthicknessof0.100mmfor
thisdevice.Thestencilshouldbelasercutwithelectro-
polishednish.Thestencilshouldhaveapositivetaperof
approximately5degrees.Electropolishingandtapering
thewallsresultsinreducedsurfacefrictionandbetterpaste
release.Duetothesmallaperturesize,asolderpastewith
Type4orsmallerparticlesarerecommended.Assuminga
100umthickstencil,theaperturedimensionsshownwillyield
anarearatioofapproximately0.75.

Recommended Mounting Pattern
Stencil Opening (0.220 x 0.480 mm)
Land Pad (0.200 x 0.430 mm)
All Dimensions are in mm.
Component
1.000
.850
Table 2 - Recommended Assembly Guidelines
Assembly Parameter Recommendation
SolderStencilDesign LaserCut,Electro-Polished
ApertureShape Rectangular
SolderStencilThickness 0.100mm(0.004”)
SolderPasteType Type4sizesphereorsmaller
SolderReowProle PerJEDECJ-STD-020
PCBSolderpadDesign Non-SolderMaskDened
PCBPadFinish OSPorNiAu
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 10
Semtech
Outline Drawing - SGP1006N3T
Land Pattern - SGP1006N3T
b
bbb
aaa
N
e
D
DIM
A1
A
0.25
0.15 0.20
0.08
0.10
3
1.00
0.70 BSC
MILLIMETERS
MAX
0.05
0.45
DIMENSIONS
MIN
0.00
NOM
0.35
0.015
0.40
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
NOTES:
1.
0.60
E
1.0750.95
0.55 0.675
PIN 1
INDICATOR
(LASER MARK)
SEATING
PLANE
L0.20 0.25 0.30
1
N
2
D
bbb CAB
C
aaa C
B
A
E
D/2
A1
A
e/2
e
LxN
bxN
(0.025-0.075)
E/2
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
NOTES:
2.
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
DIM
X
Y
C
MILLIMETERS
(0.42)
0.20
0.43
DIMENSIONS
0.85Z
P0.70
Y
Z
X
P/2
P
(C)
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 11
Semtech
Marking Code
Tape and Reel Specication - Paper Tape, 2mm Pitch
50
Notes: Marking will also include line matrix date code
50
50
50
Pin 1 Location
(Towards Sprocket Holes)
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
www.semtech.com Page 12
Semtech
Tape and Reel Specication - Plastic Tape, 4mm Pitch
Ordering Information
Part Number Qty per Reel Reel Size Carrier Tape Pitch
RClamp0512TQTNT 10000 7Inch Paper 2mm
RClamp0512TQTCT 3000 7Inch Plastic 4mm
RailClampandRClampareregisteredtrademarksofSemtechCorporation.
50
50
50
Pin 1 Location
(Towards Sprocket Holes)
RClamp0512TQ
Final Datasheet Rev 6.0
December 17, 2015
Page 13
Semtech
Contact Information
Semtech Corporation
200 Flynn Road, Camarillo, CA 93012
Phone: (805) 498-2111, Fax: (805) 498-3804
www.semtech.com
IMPORTANT NOTICE
Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a
guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right
to make changes to the product or this document at any time without notice. Buyers should obtain the latest relevant information before placing orders
and should verify that such information is current and complete. Semtech warrants performance of its products to the specications applicable at the time
of sale, and all sales are made in accordance with Semtech’s standard terms and conditions of sale.
SEMTECH PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES
OR SYSTEMS, OR IN NUCLEAR APPLICATIONS IN WHICH THE FAILURE COULD BE REASONABLY EXPECTED TO RESULT IN PERSONAL INJURY, LOSS OF LIFE
OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. INCLUSION OF SEMTECH PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE UNDERTAKEN
SOLELY AT THE CUSTOMER’S OWN RISK. Should a customer purchase or use Semtech products for any such unauthorized application, the customer shall
indemnify and hold Semtech and its ocers, employees, subsidiaries, aliates, and distributors harmless against all claims, costs damages and attorney
fees which could arise.
The Semtech name and logo are registered trademarks of the Semtech Corporation. All other trademarks and trade names mentioned may be marks and
names of Semtech or their respective companies. Semtech reserves the right to make changes to, or discontinue any products described in this document
without further notice. Semtech makes no warranty, representation or guarantee, express or implied, regarding the suitability of its products for any
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© Semtech 2015