2SC6095 Ordering number : ENA0411 2SC6095 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications * DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features * * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 80 V Emitter-to-Base Voltage VEBO 6.5 V IC 2.5 A Base Current ICP IB 500 mA Collector Dissipation PC Mounted on a ceramic board (250mm20.8mm) 1.3 W Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Collector Current Collector Current (Pulse) 4 A Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Marking : QF Symbol ICBO IEBO hFE Conditions VCB=70V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings min typ Unit max 300 1 A 1 A 600 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 53006EA MS IM TB-00002345 No. A0411-1/4 2SC6095 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VCE(sat)1 VCE(sat)2 VBE(sat) 150 mV 90 135 mV 0.9 1.2 Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Package Dimensions unit : mm 7007A-004 1.5 V V IC=100A, RBE=0 IC=1mA, RBE= 120 V 80 V IE=10A, IC=0A See specified Test Circuit. 6.5 V 40 ns See specified Test Circuit. 920 ns See specified Test Circuit. 32 ns IB1 INPUT OUTPUT IB2 VR10 RB 50 4.0 1.0 2.5 1.6 2 pF 120 PW=20s D.C.1% 4.5 1 MHz 14 Switching Time Test Circuit Top View 0.4 Unit 100 Collector-to-Emitter Breakdown Voltage Fall Time max IC=1A, IB=50mA IC=1A, IB=100mA V(BR)CBO ton tstg tf typ 350 Collector-to-Base Breakdown Voltage Storage Time min VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=10A, IE=0A Turn-ON Time Ratings Conditions RL + 100F 3 VBE= --5V + 470F VCC=40V 0.4 10IB1= --10IB2=IC=0.5A 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter Bottom View SANYO : PCP No. A0411-2/4 2SC6095 IC -- VCE A 80mA 60mA 2mA 1mA 0.4 0 0.2 0.4 0.6 0.8 0 7 VCE=5V 2 100 7 5 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 0.8 1.0 f T -- IC VCE=10V 3 2 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 f=1MHz Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 2 10 7 5 3 IT11073 VCE(sat) -- IC 5 5 2 Collector Current, IC -- A IT11072 7 1.2 IT11071 5 10 0.01 5 Cob -- VCB 100 0.6 7 Gain-Bandwidth Product, f T -- MHz --25C 3 2 0.4 Base-to-Emitter Voltage, VBE -- V 1000 Ta=75C 25C 5 0.2 IT11070 hFE -- IC 1000 3 0.01 0 1.0 Collector-to-Emitter Voltage, VCE -- V DC Current Gain, hFE 0.5 IB=0mA 0 1.0 --25C 5mA 0.8 1.5 C 10mA 2.0 25C 20mA Ta=75 1.2 VCE=5V A 40m Collector Current, IC -- A 1.6 IC -- VBE 2.5 100m Collector Current, IC -- A 2.0 3 2 0.1 7 5 C 75 = Ta 3 2 C 5 --2 C 0.01 25 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11074 Collector-to-Base Voltage, VCB -- V 3 5 7 0.1 2 3 5 7 1.0 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 0.1 7 C 75 C 25 -- 3 2 5 VBE(sat) -- IC 3 3 = Ta 3 IT11075 IC / IB=20 5 2 Collector Current, IC -- A VCE(sat) -- IC 5 2 C 25 2 Ta= --25C 1.0 7 75C 25C 5 3 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11076 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT11077 No. A0411-3/4 2SC6095 ASO Collector Current, IC -- A m 0 s D s 1 m Op M CO s ou pe e ra nt ra tio ed tio n( on n ( Tc a c Ta= =2 er 25 5 am C) ic C) bo ar d( 25 0m m2 0 3 2 0.1 7 5 3 .8m Tc=25C Single Pulse 0.01 0.1 2 3 1.3 1.2 s 0 10 DC 1.0 7 5 2 <10s 50 10 ICP=4A IC=2.5A 3 2 PC -- Ta 1.4 100ms Collector Dissipation, PC -- W 7 5 M ou nt ed 1.0 on ac er 0.8 am ic bo ar d 0.6 (2 50 m m2 0.4 0. 8m m ) 0.2 m ) 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT11078 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT11079 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT11080 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No. A0411-4/4