MSS-30,000 Series Low Barrier metelics 1] CORPORATION Schottky Diode + <= rae n x ania 7 Features Applications Low Rs5Q e Mixers: single diode, image reject, image enhancement, ring quad Low NF g4 . . ; Doublers Available in many configurations . . Modulators e Tight batch matching available @ Hi-Rel available Low Barrier Specifications @ 25C Part Number Ve Typ. Ver Min. C, Typ. Cy Typ. NF sg R, Typ. Rp Typ. Feo Typ. Outline @imA @ 10 pa @ov @ov ** @5mA ee (Volts) (Volts) (PF) (pF) (aB) (Ohms) (Ohms) (GHz) MSS-30,046-C15 10 MSS-30,046-P55 29 2 10 23 6 10 15 160 MSS-30,046-P86 27 MSS-30,050-C15 15 MSS-30,050-P55 27 2 AS 28 6 6 11 175 MSS-30,050-P86 32 MSS-30, 142-B10 10 MSS-30, 142-E20 29 2 07 .20 6 13 18 175 MSS-30, 142-H20 25 MSS-30, 148-B10 15 MSS-30, 148-E20 27 2 A2 25 6 7 12 190 MSS-30, 148-H20 30 MSS-30, 154-B10 25 MSS-30, 154-E20 25 2 22 .35 6 3 8 240 MSS-30, 154-H20 40 , MSS-30, 242-B20 10 MSS-30,242-E35 29 2 07 15 6 13 18 175 MSS-30,242-H30 25 MSS-30,248-B20 5 MSS-30,248-E30 27 2 12 25 6 7 12 190 MSS-30,248-H30 .30 MSS-30,254-B20 25 MSS-30,254-E30 25 2 22 35 6 3 8 240 MSS-30,254-H30 .40 MSS-30,442-B4 | 29 2 .07* .10* 6 13 18 175 MSS-30,442-E45 29 2 07 .15* 6 13 18 175 MSS-30,448-B4 I 27 2 12* .15* 6 7 12 190 MSS-30,448-E45 27 2 12* .20* 6 7 12 190 MSS-30,454-B40 .25* MSS-30,454-E40 25 2 .22* .25* 6 3 8 240 MSS-30,454-H40 25* * Diagonal **See page 2 ***FCO = 1i(2*a*Rc*Cj, FCO = Hz, Ro = Ohms; Cy =Farads tSee page 2 (Ct Adjacent = 4*C4 Diag) Notes: Consult factory for special versions, configurations, packages, high reliability screening, or customer designs. Disclaimer: This data sheet is issued to provide information only and Metelics Corporation reserves the right to alter without notice tre specifications, design, price, or conditions of supply of this product.Low Barrier Schottky Description The Metelics MSS-30,000 series silicon Schottky barrier diodes are constructed using advanced technology, materials and processes, resulting in a lower series resistance (R,) than is produced with conventional methods. This N-type mixer diode is well-suited for applications where ~6 dBm to +5 dBm per diode is available. Typical Data IV Forward Curve 100 MA = = F | Loe 7] 10k < = = YY = & = 5 5 | 4 o 1 / & = y 3 z = / MSS-30,046-P86 | 4 3 T 4 100 vA 7 | 10 / o 5 1.0 Forward Voltage (VOLTS) oi 1 i ee be _ Maximum Ratings Storage Temperature .............. 65to + 150C Operating Temperature ............ 65to + 150C Soldering TemperatureChips ...... 230C for 30 sec. Soldering TemperatureB.L......... 230C for 10 sec. DC Power Dissipation ............... 100 mW/ max. derate linearly to O mW at + 150C Beam Lead PullStrength................... 2 grams CAUTION: Static Sensitive Device |-V Reverse Curve 100 pA Tm 10 pA ] 1A / TOP TTtiit TT TTTtl TT TTT 100 nA Reverse Current 10 nA 3 > Lut 11) 100 pA Ltt tity L tidal } tt tit | i tit A 1 10 100 1000 Reverse Voltage (VOLTS) NF & ZIF VS LO Power 10-_ mT TI T1777 500 9 + 400 = MSS-30,046-P86 aa 8 300 NF - ZIF (dB) = J (OHMS) 5 -6 -3 0 +3 ~6 L.O. Power (dBm) Note** NF measured at 9.375 (3 GHzt) 500 source impedance 502 load at 30 MHz, 1.5 dB NF amplifier <1 load at DC Zip Measured using a 10 kHz signal in same set-up NE scp = NF dsp +3 dBqT Smith Chart 500 Reference A=100 pA, 6 dBm B=1% mA, 0 dBm C=5 mA, +6 dBm Equivalent Circuits Packaged Beam Lead Cp Lp Cp mT iI | oonrm {} > bp Cot Trt sto i l b | R | Rs 3 1 . Cy I Cj | Dad 1 Li i AT AT I t 1 { | | | L___ ya | $A | Rj Rj I Chip | Po Notes: Consult factory for special versions, configurations, packages, high reliability screening, or custom designs. Disclalmer: This data sheet is issued to provide information only and Metelics Corporation reserves the right to alter without notice the specifications, design, price, or conditions of supply of this product.METELICS CORPORATION 975 Stewart Drive Sunnyvale, CA 94086 Telephone: (408) 737-8181 TWX: 910-339-9537 ~ FSCM & CAGE 59365 POLARITY: CATHODE ANODE DOT CAP Package Outlines CUT LEAD PAD Dimensions are in Mils {mm}. B10 POINTED BEAM B20 B40 B41 18.46) SQ 5.54.14) i geri bm | 85 8.0 9.5(.24) (22) 210 (20) he 19.5 Ce = 06 oF 8.5 (22) (53) (6) | p= .100 10 (25) TYP 12 (30) | : | r n> { 5(.13) i f 9.5 (24) 10(.25) | L. A 8.5 (22) i t 114.28) f 9.5.24) @ 6 (18) 124.30) 4 be = 03 pF peed p=.ini 10.25) Cp =.04 pF J I, | | Cp = .03 pF Lp= 10H 5.0(.13) . Lp =.1nH TYP. 4.75 (121 TY? C15,C16 E20 E30 _ 200 (5.1) -| 22.56) p= 1 oF 140 (3.56) 78 (.46) re (3 PLCS) _ 110(2 79) Gold Pad 2 Places } 90 (2.29) sep 4 cuttead (~ I OD 1S = - Cut Lead 138 +005) sel Pad 0 { | 80 (2.03) oO Sq Model| Pad Dia - Min 221.56) C15 | 1.1.03 +003) 18.46) Resin 102 (2.59) 2 | - t C16 | 2211.05 + .0%) Encapsulation. 98(2.41) Places CPE sean 7 t ; . + + 51.13) 51 5 3 (68) Gold Back (13.03) f t 1 4 51.13) _ 3 (08) $0 (1.27) 191.18) - Max. 7 (33) CERAMIC SUBSTRATE 50 (1.27) MAX CERAMIC SUBSTRATE P55 125, B18 eee 128 22.56) win. Pe ie 3-18) 78 (46) ia PLCS) MIN 22 (56) (4 PLCS) 1230 ce = 07 pe 2(.30) ee anh 5 (1.4) _f Cp=.13pF 5" (7.3) DIA 22 (56) Lp =.35 0H Co a 110 (2.79) ose 90 (2.29} = DOUBLE RING 501.27 50 (1.27) Cc Q (1.27) SQUARE RESIN rune souan 14 (36) ENCAPSULATION a O 180 (4.57) 50 (127) qd _ 5(.13} 140 (3.86) SQUARE RESIN T a ' 3 (08) (4 PLES) een / ENCAPSULATION 4 (10) i 0 = a CERAMIC SUSTRATE CERAMIC SUSTRATE TYP = ENCAPSULATION CERAMIC SUBSTRATE 0.(1.27) Q H20 H30 H40 P86 108 2.9 LID DIAMETER 102 (2.59) 23 (58) 102 (2.58 ore BT eOB 23 (58) 1743) SQUARE 81 (2.06) on 17 (43) f] 23 (.58) 138) 17 (43) = + !) | - 106 (2.69) | 921234 [7 = SQUARE i 4 r | | 64 (1.63) 101. 8017 52) DIA _ \ _ O(-25) Cut Lead ao) |__| 130 (3.3) 104 (2.64) 94.1.6) 82 (2.08) 60 (1.52) 04.28 MIN 81 (2.06) Cp = .18 pF Cp =.18 pF > 2106.33) 70 (1.78) B(.2) (2.34) tp=.5nH tp=.5nH 210 (5. ay) Square t 180 (057) _ 190 (4.83) t 1 i $08} J+ 180,45 | S20) 35 (89) 8(.20) f 61.15) ye Ft 410) 354 80) : (15) 25 (64) oo 3(.08) = 6115) | Cp = 15pF 7 aoe t Lp =1nH sor 3 (0B) 84 (2.13) = 35 (89) t ' tp 25 Tt zen ao oS 78 (1.98) 7 > Qo DIA. Date Code 8307 Rev.A 8519 4 Printed in U.S.A.