SILICON TRANSISTOR 2$D1899-Z (NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION '2SD1899-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES @ High hre hre= 100 to 400 @ Low Vceisat) VcEisat) = 0.3 V QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number JEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage VcBo 60 Vv Collector to Emitter Voltage Vcco 60 V Emitter to Base Voltage . ot VEBO 7.0 Vv Collector Current (DC) - . Ic 3.0 A Collector Current (Pulse) Ic* 5.0 A Base Current (DC) i 0.5 A Total Power Dissipation (Ta = 25 C) Pri** 2.0 WwW Total Power Dissipation (Tc = 25 C) Pt2 . 10 Ww Junction Temperature , Ti = 150 c Storage Temperature: . Tstg -55 to +150 C * PW 10 ms, Duty Cycle $ 50 % ** Mounted on ceramic substrate of 7.5 cm? x 0.7 mm PACKAGE DIMENSIONS _ {in millimeters) 6.5+0.2 3 2,340.2 5.0+0.2 | to 0.5+0.1 a |T ; C14) : . a J 1 |} 2 Za => ton sda S| S zo ~% I La dg oO] Oo Ww ty 1 2 3)etc sot ot HTH Hl | os L : MAX. 18 1.140.2 0.9 MAX.: OB 2.3/2.3] | lA co i 1. Base 2. Collector 3. Emitter 4. Collector Document No, TC-1818A (0.D, No. TC-6082) Date Published December 1993 M Printed in Japan NEC Corporation 1986NEC 2SD1899-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current Icao 10 HA "| Vee = 60 V, lk=0 Emitter Cutoff Current lego 10 LA Vep = 7.0 V, Ic=0 DC Current Gain hre1* 60 Vce = 2.0V,Ic=0.2A DC Current Gain hre2* 100 400 Vee = 2.0 V, Ic = 0.6A DC Current Gain hre3* 50 Vee = 2.0 V, Ic=2.0A Collector Saturation Voltage Vceisat)* 0.14 0.25 Vv Ic=1.5A, B=0.15A Base Saturation Voltage VBEtsat)* 0.93 1.2 V Ic=1.5A,lB=0.15A Gain Bandwidth Product fr 120 MHz Vce = 5.0 V, le =-1.5A Output Capacitance Cob 30 pF Vce = 10 V, le = 0, f= 1.0 MHz Turn-on Time / ton 0.15 0.5 us Ic= 1 AVec = 10 V.RL= 10 Storage Time tstg 0.75 2.0 ys ler = leo = 0.1 A Fall Time tf 0.2 0.5 us * Pulsed: PW & 350 us, Duty Cycle 8 2% hre Classification MARKING M L K hFe2 100 to 200 | 160 to 320 | 200 to 400 TYPICAL CHARACTERISTICS (Ta = 25 C) Pr Total Power Dissipation -W TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 12 10 8 yi Op. . 6 ey Je. Se, ; 4 wi 4 th 7.5 cm? xg > 2 ees 0 50 100 150 200 Ta Ambient Temperature C Ic - Collector Current ~ A 10 5.0 1.0 0.5 0.1 FORWARD BIAS SAFE OPERATING AREA MAX. [Te = 25C 0.01 Single Pulse 1.0 2.0 5.0 10 20 60 100 Vce ~ Collector to Emitter Voltage VNEC 2$D1899-Z 100 80 60 40 20 dT Percentage of Rated Current % ic Collector Current A 10 5.0 1.0 0.5 0.1 0.05 ic - Collector Current - A 0.01 0 DERATING CURVE OF SAFE OPERATING AREA 50 100 150 200 Ta Ambient Temperature C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 mA 90 mA 80 mA 7OmA 0.4 0.8 1.2 1.6 2.0 Vce - Collector to Emitter Voltage - V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Vece= 2.0V Pulsed Ta = 125C 02 04 06 08 10 12 14 16 Vee Base to Emitter Voltage - V Ic Collector Current - A Ic Collector Current - A hre DC Current Gain 6.0 5.0 4.0 3.0 2.0 1.0 000 500 200 100 50 20 10 0.01 REVERSE BIAS SAFE OPERATING AREA L = 180 #H Vceoisus) 20 40 60 80 100 Vce Collector to Emitter Voltage V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Pr=10W | | ech fae) pos 3.9 mA 2.0 mA mA 1.0mA Is= 0.5 mA 10 20 30 40 50 Vce Collector to Emitter Voltage V DC CURRENT GAIN vs. COLLECTOR CURRENT Vece= 2.0 Pulsed Ta = 125 C 0.05 0.1 0.5 1.0 5.0 10 lc Collector Current -ANEC a 2$D1899-Z BASE AND COLLECTOR SATURATION FALL, STORAGE AND TURN ON TIME vs. VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 se oe 10 > = Pulsed Vec=10V a 5.0 5 5.0 lc= 10+ |e =-10- lez $s & Ts= 125C || Vesetsan EF Q 2.0 og 1.0 FET 1.0 = CO oc Od 58 0.5 75 F PEE 0S at 25C | Ta= 125 ses 5 25C | | | rie 02 OM 0.1 VcEtsat) fs 0.1 23 75C 88 0.05 25 C 0.05 it ~25 Bs 0.02 SS 0.01 0.01 0.01 0.02 0.05 0.10.2 05 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10 lc - Collector Current-A : Ie Collector Current A GAIN BANDWIDTH PRODUCT vs. OUTPUT CAPACITANCE vs. COLLECTOR CURRENT COLLECTOR TO BASE VOLTAGE x Vee = 5.0 V LL fa4 OMH = 500 & 500 4 8 g 8 = 9200 x 200 S = Qa S 100 S 100 s 3 ge a 3 50 a 50 & \ a 8 9 20 99 10 10 0.010.02 0.05 0.1 0.2 05 1020 50 10 1.0 2.0 5.0 10 20 60 100 Ic Collector Current A Vce Collector to Base Voltage ~ VNEC : 2$SD1899-2 [MEMO]NEC | oe -2SD1899-Z Reference Application note name No. Quality control of NEC semiconductors devices. TEI-1202 Quality contro! guide of semiconductors devices. MEI-1202 Assembly manual! of semiconductors devices. IEI-1207 Design of Push-Pull Type Switching Regulators (Basic) TEB-1002 Design of Push-Pull Type Switching Regulators (Applications) TEB-1003 Optimum Base Drive Conditions of Switching Power Transistors TEB-1014 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. ; Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6