BLF7G15LS-200 Power LDMOS transistor Rev. 3 -- 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f (MHz) (mA) (V) (W) 2-carrier W-CDMA 1476 to 1511 1600 28 50 [1] IDq VDS PL(AV) D ACPR (dB) (%) (dBc) 19.5 29 35[1] Gp Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz. 1.2 Features and benefits Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1450 MHz to 1550 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for W-CDMA base stations and multi carrier applications in the 1450 MHz to 1550 MHz frequency range BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 source Simplified outline Symbol 1 1 3 [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package BLF7G15LS-200 Name Description Version - SOT502B earless flanged LDMOST ceramic package; 2 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage 0.5 +13 V ID drain current - 56 A Tstg storage temperature 65 +150 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL = 50 W; VDS = 28 V; IDq = 1600 mA 0.30 K/W Unit 6. Characteristics Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.7 mA BLF7G15LS-200 Product data sheet Min Typ Max Unit 65 67 - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 270 mA 1.5 1.9 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 A All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor Table 6. Characteristics ...continued Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 42 49 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 420 nA gfs forward transconductance VDS = 10 V; ID = 13.5 A 17 19.3 19.7 S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 9.45 A 0.012 0.048 0.093 7. Test information Table 7. Functional test information Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 1473.5 MHz; f2 = 1478.5 MHz; f3 = 1508.5 MHz; f4 = 1513.5 MHz; RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) average output power Conditions Min Typ Max Unit - 50 - W Gp power gain PL(AV) = 50 W 18.3 19.5 - dB RLin input return loss PL(AV) = 50 W - 8 5.5 dB D drain efficiency PL(AV) = 50 W 27 29 - % ACPR adjacent channel power ratio PL(AV) = 50 W - 35 33 dBc Table 8. PAR performance Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test model 1; 64 DPCH; f1 = 1511 MHz; RF performance at VDS = 28 V; IDq = 1600 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PARO output peak-to-average ratio PL(AV) = 100 W at 0.01 % probability on CCDF 4.2 4.6 - dB 7.1 Ruggedness in class-AB operation The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 1600 mA; PL = 150 W (CW); f = 1476 MHz to 1511 MHz. 7.2 Impedance information Table 9. Typical impedance information IDq = 1600 mA; main transistor VDS = 28 V. ZS and ZL defined in Figure 1. BLF7G15LS-200 Product data sheet f (MHz) ZS () ZL () 1410 0.74 j1.52 3.5 j1.7 1480 0.65 j1.7 4.0 j0.74 1560 0.61 j1.74 3.8 + j0.5 All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.3 Graphs 014aab253 22 60 (1) Gain (dB) (%) (2) 16 40 10 20 4 0 0 100 200 300 PL (W) VDS = 28 V; IDq = 1600 mA; f = 1511 MHz. (1) gain (2) efficiency Fig 2. BLF7G15LS-200 Product data sheet One-tone CW power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 014aab254 22 60 014aab255 0 (1) (%) Gain (dB) IMD (dBc) -20 16 (1) 40 (2) (2) -40 (3) 10 20 -60 4 -80 0 0 50 100 150 0 50 100 PL(AV) (W) 150 PL(AV) (W) VDS = 28 V; IDq = 1600 mA; f = 1511 MHz; tone spacing 0.1 MHz. VDS = 28 V; IDq = 1600 mA; f = 1511 MHz; tone spacing 0.1 MHz. (1) gain (1) IMD3 (2) efficiency (2) IMD5 (3) IMD7 Fig 3. Two-tone CW power gain and drain efficiency as function of average load power; typical values 014aab256 21 50 (%) Gain (dB) Fig 4. Two-tone intermodulation distortion as a function of average load power; typical values 014aab257 -15 ACPR (dBc) 40 20 -25 (1) 30 19 (2) -35 20 18 10 150 17 0 50 100 -45 0 PL (W) 50 100 150 PL (W) VDS = 28 V; IDq = 1600 mA; f = 1511 MHz; carrier spacing 5 MHz. VDS = 28 V; IDq = 1600 mA; f = 1511 MHz; carrier spacing 5 MHz. (1) gain (2) efficiency Fig 5. 2-carrier W-CDMA power gain and drain efficiency as function of load power; typical values BLF7G15LS-200 Product data sheet Fig 6. 2-carrier W-CDMA adjacent channel power ratio as function of load power 5 MHz frequency offset; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 7.4 Test circuit BLF7G15L(S)-200 Input Circuit RO4350 30 Mil NXP C3 C8 - R1 + C5(1) C10 C11 BLF7G15L-200 Output Circuit RO4350 30 Mil NXP C2 C1 BLF7G15L-200 Output Circuit RO4350 30 Mil NXP C7 BLF7G15L(S)-200 Input Circuit RO4350 30 Mil NXP C6 C9 C4 014aab258 (1) C5 should be mounted under C11. Rogers RO4350 Printed-Circuit Board (PCB) with r = 3.48 and thickness = 0.765 mm (30 mil). See Table 10 for list of components. The drawing is not to scale. The vias can be as a reference to place components. The above layout shows the test circuit used to measure devices in production. The RF Power and Bas-Station group can provide a more appropriate application demonstration for specific customer needs. Fig 7. Component layout Table 10. List of components See Figure 7 for test circuit. BLF7G15LS-200 Product data sheet Component Description Value Remarks C1 multi layer ceramic chip capacitor 10 pF ATC 800B C2, C7, C10 multi layer ceramic chip capacitor 47 pF ATC 800A C3, C4, C5, C6 multi layer ceramic chip capacitor 10 F Murata C8, C9 multi layer ceramic chip capacitor 36 pF ATC 800B C11 electrolytic capacitor 470 F; 63 V R1 chip resistor 15 All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 Philips 1206 (c) NXP B.V. 2011. All rights reserved. 6 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 8. Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 8. 0.390 0.010 0.380 Package outline SOT502B BLF7G15LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 9. Abbreviations Table 11. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G15LS-200 v.3 20110722 Product data sheet - BLF7G15LS-200 v.2 Modifications: * The status of this data sheet has been changed to Product data sheet BLF7G15LS-200 v.2 20110301 Preliminary data sheet - BLF7G15LS-200 v.1 BLF7G15LS-200 v.1 20100913 Preliminary data sheet - - BLF7G15LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft -- The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. BLF7G15LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF7G15LS-200 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 22 July 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 11 BLF7G15LS-200 NXP Semiconductors Power LDMOS transistor 13. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 Impedance information . . . . . . . . . . . . . . . . . . . 3 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 July 2011 Document identifier: BLF7G15LS-200