BLF7G15LS-200P - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

200 W LDMOS power transistor for base station applications at frequencies from

1450 MHz to 1550 MHz.

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.

Carrier spacing 5 MHz.

1.2 Features and benefits

Excellent ruggedness

High efficiency

Low Rth providing excellent thermal stability

Designed for broadband operation (1450 MHz to 1550 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances

(RoHS)

1.3 Applications

RF power amplifiers for W-CDMA base stations and multi carrier applications in the

1450 MHz to 1550 MHz frequency range

BLF7G15LS-200

Power LDMOS transistor

Rev. 3 — 22 July 2011 Product data sheet

Table 1. Typical performance

Ty pical RF performance at Tcase = 25



C in a common source class-AB production test circuit.

Mode of operation f IDq VDS PL(AV) GpDACPR

(MHz) (mA) (V) (W) (dB) (%) (dBc)

2-carrier W-CDMA 1476 to 1511 1600 28 50 19.5 29 35[1]

Product data sheet Rev. 3 — 22 July 2011 2 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

6. Characteristics

Table 2. Pinning

Pin Description Simplified outline Symbol

1drain

2gate

3source [1]

sym112

Table 3. Ordering information

Type number Package

Name Description Version

BLF7G15LS-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 65 V

VGS gate-source voltage 0.5 +13 V

IDdrain current - 56 A

Tstg storage temperature 65 +150 C

Tjjunction temperature - 200 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-c) thermal resistance from junction to case Tcase =80C; PL=50W;

VDS =28V; I

Dq = 1600 mA 0.30 K/W

Table 6. Characteristics

Tj = 25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=2.7mA 65 67 - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 270 mA 1.5 1.9 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V--4.2A

Product data sheet Rev. 3 — 22 July 2011 3 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

7. Test information

7.1 Ruggedness in class-AB operation

The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;

IDq = 1600 mA; PL= 150 W (CW); f = 1476 MHz to 1511 MHz.

7.2 Impedance information

IDSX drain cut-off current VGS =V

GS(th) +3.75 V;

VDS =10V 42 49 - A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 420 nA

gfs forward transconductance VDS =10V; I

D= 13.5 A 17 19.3 19.7 S

RDS(on) drain-source on-state resistance VGS =V

GS(th) + 3.75 V;

ID=9.45A 0.012 0.048 0.093 

Table 6. Characteristics …continued

Tj = 25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Table 7. Functional test information

Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 64 DPCH; f1= 1473.5 MHz; f2= 1478.5 MHz; f3= 1508.5 MHz; f4= 1513.5 MHz;

RF performance at VDS =28V; I

Dq = 1600 mA; Tcase =25



C; unless otherwise specified; in a

class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

PL(AV) average output power - 50 - W

Gppower gain PL(AV) =50W 18.3 19.5 - dB

RLin input return loss PL(AV) =50W - 85.5 dB

Ddrain efficiency PL(AV) =50W 27 29 - %

ACPR adjacent channel power ratio PL(AV) =50W - 35 33 dBc

Table 8. PAR performance

Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 64 DPCH; f1= 1511 MHz; RF performance at VDS =28V; I

Dq = 1600 mA; Tcase =25



unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter Conditions Min Typ Max Unit

PAROoutput peak-to-average ratio PL(AV) = 100 W at 0.01 %

probability on CCDF 4.2 4.6 - dB

Table 9. Typical impedance information

IDq = 1600 mA; main transistor VDS =28V.

ZS and ZL defined in Figure 1.

(MHz) ZS

()ZL

()

1410 0.74 j1.52 3.5 j1.7

1480 0.65 j1.7 4.0 j0.74

1560 0.61 j1.74 3.8 + j0.5

Product data sheet Rev. 3 — 22 July 2011 4 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

7.3 Graphs

Fig 1. Definition of transis tor imp e danc e

001aaf059

drain

gate

VDS =28V; I

Dq = 1600 mA; f = 1511 MHz.

(1) gain

(2) efficiency

Fig 2. One-tone CW power gain and drain efficiency as function of load power;

typical values

PL (W)

0 300200100

014aab253

Gain

(dB)

(%)

(1)

(2)

Product data sheet Rev. 3 — 22 July 2011 5 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

VDS =28V; I

Dq = 1600 mA; f = 1511 MHz;

tone spacing 0.1 MHz.

(1) gain

(2) efficiency

VDS =28V; I

Dq = 1600 mA; f = 1511 MHz;

tone spacing 0.1 MHz.

(1) IMD3

(2) IMD5

(3) IMD7

Fig 3. Two-tone CW power gain and drain efficiency

as function of average load power;

typical values

Fig 4. Two-tone intermodulation distortion as a

function of average load power; typical values

PL(AV) (W)

0 15010050

014aab254

Gain

(dB)

(%)

(1)

(2)

014aab255

PL(AV) (W)

0 15010050

−40

−60

−20

IMD

(dBc)

−80

(1)

(2)

(3)

VDS =28V; I

Dq = 1600 mA; f = 1511 MHz;

carrier spacing 5 MHz.

(1) gain

(2) efficiency

VDS =28V; I

Dq = 1600 mA; f = 1511 MHz;

carrier spacing 5 MHz.

Fig 5. 2-carrier W-CDMA power gain and drain

efficiency as function of load power;

typical values

Fig 6. 2-carrier W-CDMA adjacent channel power

ratio as function of load power 5 MHz

frequency offset; typical values

014aab256

PL (W)

0 15010050

Gain

(dB) η

(%)

(1)

(2)

PL (W)

0 15010050

014aab257

−35

−25

−15

ACPR

(dBc)

−45

Product data sheet Rev. 3 — 22 July 2011 6 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

7.4 Test circuit

(1) C5 should be mounted under C11.

Rogers RO4350 Printed-Circuit Board (PCB) with r= 3.48 and thickness = 0.765 mm (30 mil).

See Table 10 for list of components. The drawing is not to scale.

The vias can be as a reference to place components.

The above layout shows the test circuit used to measure devices in production. The RF Power and Bas-Station group can

provide a more appropriate application demonstration for specific customer needs.

Fig 7. Component layout

014aab258

BLF7G15L-200

Output Circuit

RO4350 30 Mil

NXP

BLF7G15L-200

Output Circuit

RO4350 30 Mil

NXP

BLF7G15L(S)-200

Input Circuit

RO4350 30 Mil

NXP

BLF7G15L(S)-200

Input Circuit

RO4350 30 Mil

NXP

−

C3 C8

C10

C11

C5(1)

Table 10. List of co mpo ne nts

See Figure 7 for test circuit.

Component Description Value Remarks

C1 multi layer ceramic chip capacitor 10 pF ATC 800B

C2, C7, C10 multi layer ceramic chip capacitor 47 pF ATC 800A

C3, C4, C5, C6 multi layer ceramic chip capacitor 10 F Murata

C8, C9 multi layer ceramic chip capacitor 36 pF ATC 800B

C11 electrolytic capacitor 470 F; 63 V

R1 chip resistor 15 Philips 1206

Product data sheet Rev. 3 — 22 July 2011 7 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

8. Package outline

Fig 8. Package outline SOT502B

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT502B 03-01-10

07-05-09

0 5 10 mm

scale

Earless flanged LDMOST ceramic package; 2 leads SOT502B

M M

UNIT A

12.83

12.57 0.15

0.08 20.02

19.61 9.53

9.25 19.94

18.92 9.91

9.65

4.72

3.43

cU2

0.25

1.14

0.89

20.70

20.45

5.33

4.32

1.70

1.45

9.50

9.30

inches 0.505

0.495 0.006

0.003 0.788

0.772

19.96

19.66

0.786

0.774 0.375

0.364 0.785

0.745 0.390

0.380

0.186

0.135 0.010

0.045

0.035 0.815

0.805

0.210

0.170 0.067

0.057

0.374

0.366

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Product data sheet Rev. 3 — 22 July 2011 8 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

9. Abbreviations

10. Revision history

Table 11. Abbreviations

Acronym Description

3GPP Third Generation Partnership Project

CCDF Complementary Cumulative Distribution Function

CW Continuous Wave

DPCH Dedicated Physical CHannel

ESD ElectroStatic Discharge

LDMOS Laterally Diffused Metal Oxide Semiconductor

LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor

PAR Peak-to-Average power Ratio

RF Radio Frequency

VSWR Voltage Standing Wave Ratio

W-CDMA Wideband Code Division Multiple Access

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLF7G15LS-200 v.3 20110722 Product data sheet - BLF7G15LS-200 v.2

Modifications: •The status of this data sheet has been changed to Product data sheet

BLF7G15LS-200 v.2 20110301 Preliminary data sheet - BLF7G15LS-200 v.1

BLF7G15LS-200 v.1 20100913 Preliminary data sheet - -

Product data sheet Rev. 3 — 22 July 2011 9 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

11.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contain s the product specification.

Product data sheet Rev. 3 — 22 July 2011 10 of 11

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omo tive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applicati ons.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLF7G15LS-200

Power LDMOS transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 22 July 2011

Document identifier: BLF7G15LS-200

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 3

7.2 Impedance information. . . . . . . . . . . . . . . . . . . 3

7.3 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

7.4 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Contact information. . . . . . . . . . . . . . . . . . . . . 10

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11