© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 1
1Publication Order Number:
NTMFS4C027N/D
NTMFS4C027N
MOSFET – Power, Single,
N-Channel, SO-8 FL
30 V, 52 A
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•CPU Power Delivery
•DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID16.4 A
TA = 80°C 12.3
Power Dissipation
RqJA (Note 1)
TA = 25°C PD2.51 W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°CID25.3 A
TA = 80°C 19.0
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C PD6.0 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID9.0 A
TA = 80°C 6.8
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.76 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID52 A
TC =80°C 39
Power Dissipation
RqJC (Note 1)
TC = 25°C PD25.5 W
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 144 A
Pulsed Source
Current (Body Diode)
TA = 25°C, tp = 10 msISM 560 A
Current Limited by Package TA = 25°C IDmax 80 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) IS23 A
Drain to Source DV/DT dV/dt7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS 42 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
MARKING
DIAGRAMS
www.onsemi.com
V(BR)DSS RDS(ON) MAX ID MAX
30 V
4.8 mW @ 10 V
52 A
7.47 mW @ 4.5 V
N−CHANNEL MOSFET
G (4)
S (1,2,3)
D (5−8)
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
4C027
AYWZZ
1
Device Package Shipping†
ORDERING INFORMATION
NTMFS4C027NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C027NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
NTMFS4C027N
www.onsemi.com
2
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum rating. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 Apk, EAS = 22 mJ.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 4.9
°C/W
Junction−to−Ambient – Steady State (Note 4) RqJA 49.8
Junction−to−Ambient – Steady State (Note 5) RqJA 164.6
Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 21.0
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 8.4 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
13.8 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.3 2.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.9 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 18 A 4.0 4.8
mW
VGS = 4.5 V ID = 30 A 6.01 7.47
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 42 S
Gate Resistance RGTA = 25°C 0.3 1.0 2.0 W
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1113 1670
pF
Output Capacitance COSS 702
Reverse Transfer Capacitance CRSS 39
Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.035
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
8.4
nC
Threshold Gate Charge QG(TH) 1.8
Gate−to−Source Charge QGS 3.5
Gate−to−Drain Charge QGD 3.3
Gate Plateau Voltage VGP 3.4 V
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 18.2 nC
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTMFS4C027N
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
9.0
ns
Rise Time tr33
Turn−Off Delay Time td(OFF) 15
Fall Time tf4.0
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
7.0
ns
Rise Time tr26
Turn−Off Delay Time td(OFF) 19
Fall Time tf3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 A
TJ = 25°C 0.79 1.1
V
TJ = 125°C 0.66
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
28.3
ns
Charge Time ta14.5
Discharge Time tb13.8
Reverse Recovery Charge QRR 15.3 nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
NTMFS4C027N
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.01.51.00.50
0
10
20
50
4.03.53.02.01.51.0
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.08.07.0 106.05.04.03.0
0.002
0.006
0.010
705030 604020
0.004
0.006
0.008
0.010
0.002
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.0
1.1
1.3
30252015105
10
100
1000
10000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
100 4.5 V to 10 V
4.0 V
3.4 V
3.2 V
3.0 V
2.8 V
4.2 V
TJ = 25°C
VDS = 3 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.008
0.007
ID = 30 A
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
0.004
0.014
0.012
1.2
1.4
0.7
1.5
0.016
60
10
3.8 V
2.0
0
20
40
60
30
70
10
50
80
5.00.50
0.020
0.018
0.003
1.6
1.7
0.9
4.5
30
40
0.005
0.009
2.5
80
90
70
3.6 V
NTMFS4C027N
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Qgs
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
400
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.1
0.01
0.1
1
10
1000
150125100755025
0
2
6
10
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
QT
Qgd
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
td(on)
tr
tf
TJ = 25°C
TJ = 125°C
VGS = 0 V
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
ID = 21 A
1000
4
8
16
200
600
800
12
14
1800
1.0
0
2
4
6
8
10
0 4 6 8 12 14 16 18 20
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
14
16
18
20
10 ms
0.01
102
1200
1400
1600
100
22
18
20
NTMFS4C027N
www.onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. GFS vs. ID
ID (A)
4030100
0
10
50
GFS (S)
20 50
20
60
30
40
80
70
Figure 15. Avalanche Characteristics
PULSE WIDTH (SECONDS)
1.E−031.E−041.E−061.E−08
1
10
100
ID, DRAIN CURRENT (A)
1.E−05
TA = 25°C
TA = 85°C
1.E−07
60
70
NTMFS4C027N
www.onsemi.com
7
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
4X
4X
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
e
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NTMFS4C027N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
