VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 1Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Phase Control Thyristors
(Hockey PUK Version), 1350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case B-PUK (TO-200AC)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 1350 A
VDRM/VRRM 400 V, 600 V
VTM 1.31 V
IGT 100 mA
TJ-40 °C to +125 °C
Package B-PUK (TO-200AC)
Circuit configuration Single SCR
B-PUK (TO-200AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
1350 A
Ths 55 °C
IT(RMS)
2700 A
Ths 25 °C
ITSM
50 Hz 24 400 A
60 Hz 25 600
I2t50 Hz 2986 kA2s
60 Hz 2726
VDRM/VRRM 400 to 600 V
tqTypical 150 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST780C..L 04 400 500 80
06 600 700
VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 2Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
1350 (500) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2700
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
24 400
t = 8.3 ms 25 600
t = 10 ms 100 % VRRM
reapplied
20 550
t = 8.3 ms 21 500
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
2986
kA2s
t = 8.3 ms 2726
t = 10 ms 100 % VRRM
reapplied
2112
t = 8.3 ms 1928
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 29 860 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.80 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.90
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.14 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.13
Maximum on-state voltage VTM Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/µs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
µs
Typical turn-off time tqITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA
VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 3Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
V
TJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated VDRM anode to cathode
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet B-PUK (TO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 4Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
DC
30°
60°
90°
120° 180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 120016002000
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST780C..L Serie s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000 2500 3000
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST7 8 0 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST780C..L Serie s
T = 125°C
J
0
500
1000
1500
2000
2500
3000
3500
0 500 1000 1500 2000 2500 3000
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST780C..L Series
T = 125°C
J
VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 5Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
10000
12000
14000
16000
18000
20000
22000
110100
Number Of Equal Amp litude Ha lf Cyc le Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST7 8 0 C . . L Se r i e s
At Any Ra t ed Loa d Condit io n And Wit h
Rated V Applied Follow ing Surge.
RRM
10000
12000
14000
16000
18000
20000
22000
24000
26000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
Initia l T = 125°C
No Voltage Reapplied
Ra t e d V Re a p p l i e d
RRM
J
ST7 8 0 C . . L Se r i e s
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST7 8 0 C . . L Se r i e s
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJ-hs
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST7 8 0 C . . L Se r i e s
Transient Thermal Impedance Z (K/W)
VS-ST780CL Series
www.vishay.com Vishay Semiconductors
Revision: 28-Sep-17 6Document Number: 94415
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95076
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
j=25 °C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(2) (3)
Instantaneous Gate Current (A)
Inst a nt a n e o us Ga t e Vo lt a g e (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
De vice: ST780C..L Series
(4)
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 12-Jul-17 1Document Number: 95076
For technical questions within your region: DiodesAmericass@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B-PUK (TO-200AC)
DIMENSIONS in millimeters (inches)
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
36.5 (1.44)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
C
A
Note:
A = Anode
C = Cathode
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Vishay:
ST780C04L0L ST780C04L1L ST780C06L0L VS-ST780C06L0 VS-ST780C04L1 VS-ST780C06L1 VS-
ST780C04L0