CHP21001002GLF - WELWYN COMPONENTS

IXXH60N65B4H1 VCES = 650V

IC110 = 60A

VCE(sat) 



 



2.2V

tfi(typ) = 43ns

DS100494D(9/16)

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247

GCE Tab

Extreme Light Punch Through

IGBT for 5-30 kHz Switching

Features

Optimized for 5-30kHz Switching

Square RBSOA

Anti-Parallel Sonic Diode

Short Circuit Capability

International Standard Package

Advantages

High Power Density

Extremely Rugged

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

BVCES IC = 250A, VGE = 0V 650 V

VGE(th) IC= 250A, VCE = VGE 4.0 6.5 V

ICES VCE = VCES, VGE = 0V 25 A

TJ = 150C 3 mA

IGES VCE = 0V, VGE = 20V 100 nA

VCE(sat) IC= 60A, VGE = 15V, Note 1 1.8 2.2 V

TJ = 150C 2.1 V

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 175°C 650 V

VCGR TJ = 25°C to 175°C, RGE = 1M 650 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC = 25°C (Chip Capability) 145 A

IC110 TC = 110°C 60 A

IF110 TC = 110°C 47 A

ICM TC = 25°C, 1ms 265 A

SSOA VGE = 15V, TVJ = 150°C, RG = 5 ICM = 120 A

(RBSOA) Clamped Inductive Load @VCE  VCES

tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs

(SCSOA) RG = 82, Non Repetitive

PCTC = 25°C 536 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C

MdMounting Torque 1.13/10 Nm/lb.in

Weight 6g

XPTTM 650V IGBT

GenX4TM w/ Sonic Diode

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH60N65B4H1

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 60A, VCE = 10V, Note 1 17 28 S

Cies 2590 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 310 pF

Cres 40 pF

Qg(on) 86 nC

Qge IC = 60A, VGE = 15V, VCE = 0.5 • VCES 22 nC

Qgc 35 nC

td(on) 19 ns

tri 80 ns

Eon 3.2 mJ

td(off) 107 ns

tfi 43 ns

Eoff 1.1 mJ

td(on) 20 ns

tri 74 ns

Eon 4.2 mJ

td(off) 120 ns

tfi 88 ns

Eoff 1.8 mJ

RthJC 0.28 °C/W

RthCS 0.21 °C/W

Inductive load, TJ = 25°C

IC = 60A, VGE = 15V

VCE = 400V, RG = 5

Note 2

Inductive load, TJ = 150°C

IC = 60A, VGE = 15V

VCE = 400V, RG = 5

Note 2

Reverse Sonic Diode (FRD)

Symbol Test Conditions Characteristic Values

(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.

VF IF = 30A, VGE = 0V, Note 1 2.5 V

TJ = 150°C 1.5 V

IRM TJ = 150°C 25 A

trr TJ = 150°C 78 ns

RthJC 0.60 °C/W

IF = 30A, VGE = 0V,

-diF/dt = 900A/μs, VR = 300V

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 (IXXH) Outline

3

D

S

A

L

D

R

E

E1

L1

D1

D2

A2

Q

C

B

A

0P 0K M D B M

b4

0P1

12

4

b

c

e

IXYS OPTION

R1R1R1R1

J M C A M

b2

A1

IXXH60N65B4H1

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

13V

10V

9V

11V

8V

7V

12V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

0 5 10 15 20 25

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

11V

13V

12V

8V

9V

14V

7V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

20

40

60

80

100

120

00.511.522.533.544.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

14V

10V

11V

9V

8V

12V

7V

13V

Fig. 4. Depe nd e n c e of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 120A

Fig. 5. Collector-to-Emitter Voltage v s.

Gate-to-Em itter Voltage

1

2

3

4

5

6

7

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 120A

T

J

= 25ºC

60A

30A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

90

100

456789101112

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

T

J

= 150ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH60N65B4H1

Fig. 7 . Trans co nduc ta nc e

0

5

10

15

20

25

30

35

40

0 50 100 150 200 250 300

I

C

- Amperes

g

f s

- Siemens

TJ

= - 40ºC

25ºC

150ºC

Fig. 10. Reverse-Bias Safe Operating Area

0

20

40

60

80

100

120

140

100 200 300 400 500 600 700

V

CE

- Volts

I

C

- Amperes

TJ

= 150ºC

RG = 5

Ω

dv / dt < 10V / ns

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 102030405060708090

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 325V

I

C

= 60A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarad

s

f

= 1 MH

z

Cies

Coes

Cres

Fig. 11. Maximum Transient Thermal Im pedance (IGBT)

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- K / W

IXXH60N65B4H1

Fig. 12. Ind uctive Switching Energy Loss vs.

Gate Resistance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5 10152025303540455055

RG - Ohms

E

off

- MilliJoules

0

1

2

3

4

5

6

7

8

E

on

- MilliJoules

E

off

E

on

TJ = 150ºC , VGE = 15V

VCE = 400V

I C = 30A

I C = 60A

Fig. 15. Inductive Turn-off Switching Times vs.

Gate Resistance

0

20

40

60

80

100

120

140

5 10152025303540455055

RG - Ohms

t f i

- Nanoseconds

0

100

200

300

400

500

600

700

t d(off)

- Nanoseconds

t

f i

t

d(off)

TJ = 150ºC, VGE = 15V

VCE = 400V

I C = 60A

I C = 30A

Fig. 13. Inductive Switching Energy Loss vs.

Collector Current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

30 40 50 60 70 80 90

IC - Amperes

E

off

- MilliJoules

0

1

2

3

4

5

6

7

8

9

E

on

- MilliJoules

E

off

E

on

RG = 5

Ω ,

VGE = 15V

VCE = 400V

TJ = 150ºC

TJ = 25ºC

Fig. 14. Inductive Switching Energy Loss vs.

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

25 50 75 100 125 150

TJ - Degrees Centigrade

E

off

- MilliJoules

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

E

on

- MilliJoules

E

off

E

on

RG = 5

Ω ,

V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

Fig. 16. Inductive Turn-off Switching Times vs.

Collec t or Current

0

20

40

60

80

100

120

140

30 40 50 60 70 80 90

I

C

- Amperes

t

f i

- Nanoseconds

60

80

100

120

140

160

180

200

t

d(off)

- Nanoseconds

t

f i

t

d(off)

R

G

= 5

Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 25ºC

T

J

= 150ºC

Fig. 17. Inductive Turn-off Switching Times vs.

Junction Temperature

0

20

40

60

80

100

120

140

25 50 75 100 125 150

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

60

80

100

120

140

160

180

200

t

d(off)

- Nanoseconds

t

f i

t

d(off)

R

G

= 5

Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

I

C

= 30A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH60N65B4H1

Fig. 19. Inductive Turn-on Switching Times vs.

Collect or Current

0

20

40

60

80

100

120

140

160

30 40 50 60 70 80 90

I

C

- Amperes

t

r i

- Nanoseconds

14

16

18

20

22

24

26

28

30

t d(on)

- Nanoseconds

t

r i

t

d(on)

R

G

= 5

Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 25ºCT

J

= 150ºC

Fig. 20. Inductive Turn-on Switching Tim es vs.

Junc tion Tempera ture

0

15

30

45

60

75

90

105

120

25 50 75 100 125 150

T

J

- Degrees Centigrade

t

r i

- Nanosecond

s

16

17

18

19

20

21

22

23

24

t

d(on)

- Nanoseconds

t

r i

t

d(on)

R

G

= 5

Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 60A

I

C

= 30A

Fig. 18 . Inductive Turn-on Switching Times vs.

Gate Resistance

0

40

80

120

160

200

5 10152025303540455055

R

G

- Ohms

t

r i

- Nanosecond

s

0

20

40

60

80

100

t

d(on)

- Nanoseconds

t

r i

t

d(on)

T

J

= 150ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 30A

I

C

= 60A

IXXH60N65B4H1

Fig. 25 . Rec overy Energy E

REC

vs. -di

F

/d

t

100

150

200

250

300

350

400

450

500

400 600 800 1000 1200 1400 1600 1800 2000

-di

F

/

d

t - A/µs

E

REC

- MicroJoules

I

F

=50A

30A

10A

T

VJ

= 150ºC

V

R

= 300V

Fig. 26. Dynam ic Parameters Q

RR

, I

RM

vs.

Virtual Junction Temperature T

VJ

0.20

0.40

0.60

0.80

1.00

1.20

0 20 40 60 80 100 120 140 160

T

VJ

- Degrees Centigrade

K

F

K

F

I

RM

K

F

Q

RR

V

R

= 300V

I

F

= 50A

-dI

F

/dt = 900A/µs

Fig. 22. Reverse Recovery Charge Q

RR

vs. -di

F

/dt

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

400 600 800 1000 1200 1400 1600 1800 2000

-di

F

/d

t - A/µs

QRR - MicroCoulombs

10A

I F = 50A

30A

TVJ = 150ºC

VR = 300V

Fig. 23. Peak Reverse Current I

RM

vs. -di

F

/d

t

10

20

30

40

50

60

70

400 600 800 1000 1200 1400 1600 1800 2000

-di

F

/d

t - A/µs

I

RR

- Amperes

I

F

= 50A

T

VJ

= 150ºC

V

R

= 300V

30A

10A

Fig. 2 4 . Recover Time t

RR

vs. -di

F

/d

t

20

40

60

80

100

120

140

400 600 800 1000 1200 1400 1600 1800 2000

-di

F

/dt - A/µs

t

RR

- Nanasecond

s

I

F

= 50A

T

VJ

= 150ºC

V

R

= 300V

30A

10A

Fig. 21. Forward Current vs. Forward Voltage

0

20

40

60

80

100

00.511.522.5

VF

- Volts

IF - Amperes

150ºC

TVJ = 25ºC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH60N65B4H1

IXYS REF: IXX_60N65B4(E6-RZ43) 9-23-16

Fig. 27. Maximum Transient Thermal Impedance (Diode)

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W