2SK3495
No.6970-1/4
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V dri ve.
•Meets radial taping.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID1.2 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 4.8 A
Allowable Power Dissipation PD1W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 10 µA
Gate-to-Sourse Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward T ransfer Admittance yfsVDS=10V, ID=0.6A 1.0 1.5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=0.6A, VGS=10V 380 500 mΩ
RDS(on)2 ID=0.6A, VGS=4V 500 680 mΩ
Continued on next page
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6970
2SK3495
52501 TS IM TA-3256
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Package Dimensions
unit : mm
2087A
[2SK3495]
1 : Source
2 : Drain
3 : Gate
SANYO : NMP
6.9
0.6
0.5
4.5
1.01.0
0.9
2.5
1.45 1.0
0.45
4.0 1.0
2.54
2.54
123
2SK3495
No.6970-2/4
0
0.5
1.0
1.5
2.0
2.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID -- VGS
ID -- VDS
0
IT03234 IT03235
VDS=10V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.4 0.60.2 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Ta=75°C
25°C
--25
°
C
VGS=2.5V
3.0V
3.5V
4.0V
10.0V
8.0V 5.0V
6.0V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
RDS(on) -- VGS
0
200
400
600
800
1000
1200
02468101214161820
IT03236
RDS(on) -- Ta
0
200
400
600
800
1000
--60 --40 --20 0 20 40 60 80 100 120 140 160
IT03237
Ta=25°C
ID=0.6A
ID=0.6A, VGS=10V
ID=0.6A, VGS=4V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C
Continued from preceding page.
Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 70 pF
Output Capacitance Coss VDS=20V, f=1MHz 20 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 5 pF
Turn-ON Delay Time td(on) See specified Test Circuit 4 ns
Rise T ime trSee specified Test Circuit 3 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time tfSee specified Test Circuit 4 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.2A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=1.2A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd V DS=10V, VGS=10V, ID=1.2A 0.5 nC
Diode Forward Voltage VSD IS=1.2A, VGS=0 0.86 1.2 V
Switching Time Test Circuit
PW=10µs
D.C.≤1%
10V
0V
VIN
P.G 50Ω2SK3495
G
S
ID=0.6A
RL=50Ω
VDD=30V
VOUT
VIN
D
2SK3495
No.6970-3/4
y
fs -- ID
0.001 0.01 0.1 23 5723 5723 57 1.0 23
IT03238
VDS=10V
1.0
5
3
2
0.1
5
3
7
2
5
3
7
2
0.01
IF -- VSD
0.01
0.1
1.0
2
3
5
7
2
3
5
7
2
3
0.6 0.7 0.8 0.9 1.00.50.4
IT03239
VGS=0
Ta=75°C
25°C
--25°C
SW Time -- ID
1.0
10
2
100
3
5
7
2
3
5
7
23 57
1.00.1 23
IT03240
VDD=30V
VGS=10V
td(on)
tr
td(off)
tf
Ciss, Coss, Crss -- VDS
2
3
7
5
10
3
7
2
5
100
3
2
0504010 20 30 60
IT03241
f=1MHz
Ciss
Coss
Crss
A S O
0.1
1.0
5
7
3
2
10
5
7
3
2
0.01
5
7
3
2
23 57
100.1 23 57
1.0 23 100
57
IT03243
DC operation
10ms
1ms
100µs
100ms
10µs
Ta=25°C
Single pulse
IDP=4.8A
ID=1.2A
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS -- Qg
IT03242
0
2
3
1
4
5
6
7
8
9
10
Operation in this area
is limited by RDS(on).
75°C
25°C
Ta= --25°C
VDS=10V
ID=1.2A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
0 20 40 60 80 100 120 140 160
PD -- Ta
IT03244
1.2
1.0
0.8
0.6
0.4
0.2
0
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
2SK3495
No.6970-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
PS
