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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
TIP145F/146F/147F
PNP Epitaxial Darlin gton Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Emitter Voltage : TIP145F
: TIP146F
: TIP147F
- 60
- 80
- 100
V
V
V
VCEO Collector-Emitter Voltage : TIP145F
: TIP146F
: TIP147F
- 60
- 80
- 100
V
V
V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current (DC) - 10 A
ICP Collector Current (Pulse) - 15 A
IB Base Current (DC) - 0.5 A
PC Collector Dissipati on (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Co ndi tion Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP145F
: TIP146F
: TIP147F
IC = - 30mA, IB = 0 - 60
- 80
- 100
V
V
V
ICEO Collector Cut-off Current : TIP145F
: TIP146F
: TIP147F
VCE = - 30V, IB = 0
VCE = - 40V, IB = 0
VCE = - 50V, IB = 0
- 2
- 2
- 2
mA
mA
mA
ICBO Collector Cut-of f Current : TIP145F
: TIP146F
: TIP147F
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCB = - 100V, IE = 0
- 1
- 1
- 1
mA
mA
mA
IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA
hFE DC Current Gain VCE = - 4V, IC = - 5A
VCE = - 4V, IC = - 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA
IC = - 10A, IB = - 40mA - 2
- 3 V
V
VBE(sat) Base-Emitter Satura tion Voltage IC = - 10A, IB = - 40mA - 3.5 V
VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V
tD Delay Time VCC = - 30V, IC = - 5A
IB1 = -20mA, IB2 = 2 0mA
RL = 6
0.15 µs
tR Rise Time 0.55 µs
tSTG St orage Time 2.5 µs
tf Fall Time 2.5 µs
TIP145F/146F/147F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.)
Industrial Use
Complement to TIP140F/141F/142F
Equivalent Circuit
B
E
C
R1 R2
R
18
k
R
20.12
k
TO-3PF
1.Base 2.Collector 3. Em itter
1
©2002 Fairchild Semiconductor Corporation
TIP145F/146F/147F
Rev. B, December 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
IB = -2000µAIB = -1800µA
IB = -1600µA
IB = -1400µA
IB = -1200µA
IB = -1000µA
IB = -800µA
IB = -600µA
IB = -400µA
IC[A], COLLECTOR CURRENT
VCE[V], CO LLEC TO R- EMITT ER VO L TAG E
-0.1 -1 -10 -100
100
1000
10000
100000 VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLL EC T OR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10 IC=-500IB
VCE(sat)
VBE(sat)
VBE(sat), V CE(sat)[V], SATURATION VOLTAGE
IC[A], COL L EC TOR CURRENT
-1 -10 -100 -1000
-10
-100
-1000 f=0.1MHz
VCB[V], COLLECTOR-BASE VOLTAGE
Cob[pF], CA PAC IT AN CE
-1 -10 -100 -1000
-0.1
-1
-10
-100
TIP146F
TIP147F
TIP145F
DC
IC[A], COLLEC TO R CU RRENT
VCE[V], COL L EC TOR -EMITTER VOLTAGE
0 255075100125150175
0
10
20
30
40
50
60
70
80
PC[W], POW E R DISSIPATION
TC[oC], CASE TEMPERATURE
Package Dimensions
©2002 Fairchild Semiconductor Corporation Rev. B, December 2002
TIP145F/146F/147F
Dimensions in Millimeters
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
TO-3PF
©2002 Fairchild Semiconductor Corporation Rev. I1
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not intended to be an exhaustive list of all such trademarks.
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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