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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC4536
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
The mark •
••
• shows major revised poi nts.
Document No. PU10338EJ01V0DS (1st edition)
(Previous No. P10369EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1994, 2003
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
excellent linearity and large dynamic range, which make it suitable for CATV, telecommunication, and other use, it
employs plastic surface mount type package (SOT-89).
FEATURES
• Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA
• Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• Large Ptot : Ptot = 2.0 W (Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
2SC4536 25 pcs (Non reel) • 12 mm wide embos sed taping
2SC4536-T1 1 kpcs / reel • Collect or f ace the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 15 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC250 mA
Total Power Dissipation Ptot Note 2.0 W
Junction Temperature Tj150 °C
Storage Temperat ure Tstg −65 to +150 °C
Note Mounted on double-sided copper-clad 16 cm2 × 0.7 mm (t) ceramic substrate
Data Sheet PU10338EJ01V0DS
2
2SC4536
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 20 V, I E = 0 m A – – 5.0
µ
A
Emitter Cut-off Current IEBO VEB = 2 V, IC = 0 mA – – 5.0
µ
A
DC Current Gain hFE Note 1 VCE = 10 V, IC = 50 mA 60 – 200 –
RF Characteristics
Insertion Power Gain S21e2VCE = 10 V, IC = 50 mA, f = 1 GHz 5.5 7.2 – dB
Noise Figure (1) NF Note 2 VCE = 10 V, IC = 50 mA, f = 500 MHz – 1.5 – dB
Noise Figure (2) NF Note 2 VCE = 10 V, IC = 50 mA, f = 1 GHz – 2.0 – dB
2nd Order Intermodurat i on Di storti on IM2VCE = 10 V, IC = 50 mA , RS = RL = 75 Ω,
VO = 105 dB
µ
V/75 Ω, f1 = 190 MHz ,
f2 = 90 MHz, f = f1 − f2
– 59.0 – dBc
3rd Order Intermodurat i on Di storti on IM3VCE = 10 V, IC = 50 mA, RS = RL = 75 Ω,
VO = 105 dB
µ
V/75 Ω, f1 = 190 MHz ,
f2 = 200 MHz, f = 2 × f1 − f2
– 82.0 – dBc
Notes 1. Pulse measurement: PW ≤ 350
µ
s, Duty Cycle ≤ 2%
2. RS = RL = 50 Ω, tuned
hFE CLASSIFICATION
Rank QR QS
Marking QR QS
hFE Value 60 to 120 100 to 200
Data Sheet PU10338EJ01V0DS 3
2SC4536
TYPICAL CHARACTERISTICS (TA = +25°
°°
°C)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
100
20
40
60
010 20
I
B
= 0.6 mA 0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
V
CE
= 10 V
I
C
= 50 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAXIMUM
POWER GAIN, MAG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Power Gain G
max (u)
(dB)
Maximum Available Power Gain MAG (dB)
20
10
0
0.1 0.2 0.3 0.5 1 2 3
MAG
G
max (u)
|S
21e
|
2
f = 1 MHz
I
E
= 0 mA
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
2
0.2
1
0.5
1 5 10 30
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
5
0.2
0.5
1
100 3001055030
V
CE
= 10 V
V
CE
= 10 V
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
300
100
50
30
10 1000.1 1 10 1 000
500
400
1 000
1 500
2 000
2 500
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
Ceramic Substrate
16 cm
2
× 0.7 mm (t)
R
th (j-a)
62.5˚C/W
Free Air
R
th (j-a)
312.5˚C/W
Data Sheet PU10338EJ01V0DS
4
2SC4536
5
1
2
3
4
05 10 20 50 100 200
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
VCE = 10 V
f = 1 GHz
70
80
60
50
40
30
10 30 50 100 300
Collector Current IC (mA)
IM3, IM2+, IM2– vs.
COLLECTOR CURRENT
3rd Order Intermodulation Distortion IM3 (dBc)
2nd Order Intermodulation Distortion (+) IM2+ (dBc)
2nd Order Intermodulation Distortion (–) IM2– (dBc)
IM2–
IM2+
IM3
VCE = 10 V
IM3:VO = 110 dB V/75 Ω 2 tone each
f = 2 × 190 – 200 MHz
IM2+ :VO = 105 dB V/75 Ω 2 tone each
f = 90 + 100 MHz
IM2– :VO = 105 dB V/75 Ω 2 tone each
f = 190 – 90 MHz
µ
µ
µ
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAXIMUM POWER
GAIN, MAG vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Power Gain Gmax (u) (dB)
Maximum Available Power Gain MAG (dB)
10
2
4
6
8
0
10 10030 50 300
MAG
Gmax (u)
|S21e|2
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.csd-nec.com/
Data Sheet PU10338EJ01V0DS 5
2SC4536
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
1.5±0.1
0.41
+0.03
–0.06
4.5±0.1
0.42±0.060.42±0.06
1.6±0.2
3.0
1.5
C
EB
2.5±0.1
4.0±0.25
0.8 MIN.
0.47±0.06
E : Emitter
C: Collector (Fin)
B : Base
(IEC : SOT-89)
PIN CONNECTIONS
Data Sheet PU10338EJ01V0DS
6
2SC4536
M8E 00. 4 - 0110
The information in this document is current as of May, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
•
•
•
•
•
•
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
TEL: +82-2-558-2120
FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk
FAX: +886-2-2545-3859
FAX: +82-2-558-5209
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TEL: +49-211-6503-01 FAX: +49-211-6503-487
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0302-1
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 E-mail: salesinfo@csd-nec.com
For further information, please contact
2SC4536
