1 UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com
PHOTOVOLTAIC SERIES
PLANAR IFFUSED SILICON PHOTODIODES
Colorimeters Ultra Low Noise
Photometers High Shunt Resistance
Spectroscopy Equipment Wide Dynamic Range
Fluorescence Blue Enhanced
APPLICATIONS FEATURES
The Photovoltaic Detector series is utilized for applications requiring high sen-
sitivity and moderate response speeds, with an additional sensitivity in the
visible-blue region for the blue enhanced series. The spectral response ranges
from 350 to 1 100 nm, making the regular photovoltaic devices ideal for visible
and near IR applications. For additional sensitivity in the 350 nm to 550 nm
region, the blue enhanced devices are more suitable.
These detectors have high shunt resistance and low noise, and exhibit long
term stability. Unbiased operation of these detectors offers stability under
wide temperature variations in DC or low speed applications. For high light
levels (greater than 10mW/cm2), the Photoconductive Series detectors should
be considered for better linearity .
These detectors are not designed to be reverse biased! Very slight improve-
ment in response time may be obtained with a slight bias. Applying a reverse
bias of more than a few volts (>3V) will permanently damage the detectors. If
faster response times are required, the Photoconductive Series should be con-
sidered.
Refer to the Photovoltaic Mode (PV) paragraph in the “Photodiode Character-
istics” section of this catalog for detailed information on electronics set up.
1E-4
1E-3
1E-2
1E-1
1E0
1E1
1E2
1E3
Normalized Shunt Resistance
-40 -20 0 20 40 60 80 100
Temperature (ºC)
Typical Shunt Resistance vs Temp
Norm al ized at 23 ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Responsivity (A/W)
300 400 500 600 700 800 900 1000 1100
Wavelength (nm )
Typical S pectra l Resp onse
DP Series
DP/SB Series
2
UDT Sensors Inc. Phone: 310-978-0516 Fax: 310-644-1727 http:\\www.udt.com
PHOTOVOLTAIC SERIES TYPICAL ELECTRO-OPTICAL SPECIFICATIONS AT TA=23OC
Active
Area Responsivity
(A/W) Capacit
ance
(pF)
Shunt
Resistance
(M-ohm)
NEP
(W/ Hz)Rise
Time
(ns)
Temp
Range
(º C)
400 nm 632 nm 970 nm 0 V -10 mV 0V
970 nm 0 V
632 nm
50 ohm
Model
No.
Area (mm
2)
Dimension (m m)
min
typ
min
typ
min
typ
typ
min
typ
typ
typ
Operating
Storage
Package
Style ¶
DP SERIES, METAL PACKAGE
PIN-2DPI * 1.1 .81 x 1.37 150 4 / TO-18
PIN-125DPL 1.6 1.27 sq. 160 1000 10000 2.1 e -15 30 8 / TO-18
PIN-3CDPI 4 / TO-18
PIN-3CDP 3.2 1.27 x 2.54 320 750 5000 3.0 e -15 50 7 / TO-18
PIN-5DPI 2 / TO-5
PIN-5DP 5.1 2.54φ 500 500 4000 3.4 e -15 60 5 / TO-5
PIN-13DPI 2 / TO-5
PIN-13DP 13 3.6 sq 1200 350 3500 3.6 e -15 150 5 / TO-5
PIN-6DPI 3 / TO-8
PIN-6DP 16.4 4.57φ 2000 200 3000 3.9 e -15 220 6 / TO-8
PIN-44DPI 3 / TO-8
PIN-44DP 44 6.6 sq 4300 100 2000 4.8 e -15 475
-40 ~ +100
-55 ~ +125
6 / TO-8
PIN-10DPI 10 / Lo-Prof
PIN-10DP 100 11.28φ 9800 50 1000 6.8 e -15 1000 11 / BNC
PIN-25DP
613 27.9φ
.07 .12 .33 .40 .55 .60
60000 2 50 3.0 e -14 6600
-10 ~ +60
-20 ~ +70
12 / BNC
DP SERIES, PLAS TIC PACKAGE §
FIL-3V 3.2 1.27 x 2.54 320 750 5000 3.0 e -15 20
FIL-5V
5.1 2.54φ 500 500 4000 3.4 e -15 60
FIL-20V
16.4 4.57φ 2000 200 3000 3.9 e -15 220
14 / Plastic
FIL-44V 44 6.6 sq 4300 100 2000 4.8 e -15 475
FIL-100V
100 11.28φ 9800 50 1000 6.8 e -15 1000 15 / Plastic
PIN-220DP 200 10 x 20
.08 .12 .33 .40 .55 .60
20000 15 300 1.2 e -14 2200
-10 ~ +60
-20 ~ +70
26 / Plastic
SUPER BLUE ENHANCED DP/SB SERIES ( All S pe c i f icat ions @ = 4 10 nm, VBIAS= 0V, RL= 50 )
Active
Area/Dimension Responsivity
(A/W) Capacitance
(pF) Rsh
(M-ohm ) NEP
(W/ Hz)Operat. Current
(mA) Rise Time
(ns)
Model No.
mm2mm Min Typ Typ Min Typ Max Typ
Pakcage
Style ¶
PIN-5DP/SB
5.1 2.54φ 450 150 5.2 e -14 2.0 0.2 5 / TO-5
PNI-10DP/SB
10 / LoProf
PIN-10DPI/SB 100 11.28φ 8800 10 2.0 e -13 10.0 2.0 11 / BNC
PIN-220DP/SB 200 10 x 20
0.15 0.20
17000 5 2.9 e -13 10.0 4.0
-10 ~ +60
-20 ~ +70
26 / Plastic
* The I suffix on the model number is indicative of the photodiode chip being isolated from the package by an additional pin connected to the case.
§ The photodiode chips in FIL series are isolated in a low profile plastic package. The have a large field of view as well as in line pins.
Operating Temperature: -40 to +100 ºC, Storage Temperature: -55 to +125 ºC.
( All Specifications @ = 410nm, VBIAS = 0V, RL = 50 )
For MECHANICAL DRAWINGS Click Here
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