R03DS0137EJ0100 Rev.1.00 Page 1 of 9
2019.1.17
Datasheet
μPC844, μPC4744
Single Power Supply, High Speed, Wide Band,
Quad Operational Amplifier
DESCRIPTION
μPC844, μPC4744 are high-speed version of the single-power general-purpose operational amplifier μPC451,
μPC324 realizing high-speed response and high stability. By adopting a high speed PNP transistor circuit,
various characteristics such as slew rate and gain bandwidth are improved, as compared to μPC451 and
μPC324, the load capacity stability is also improved, with no crossover distortion.
It can be used widely for various application circuits such as single power supply AC amplifier, active filter, line
driver, amplifier for light receiving element, etc.
Depending on the usage and operating ambient temperature range, the μPC844 is designed for extended
temperature and suited for wide operating ambient temperature application, and μPC4744 is design for general
purposes. Along with this series of lineup, the dual type operational amplifier, µPC842, μPC4742 with the same
circuit configuration are also available.
FEATURES
Slew Rate (AV = 1 ) 7 V/µs (TYP.) (V
+ = +5 V, V - = GND)
Gain Bandwidth Product (f = 100 kHz) 3.5 MHz (TYP.)
Input Offset Voltage ±2 mV (TYP.)
Input Offset Current ±6 nA (TYP.)
Operating Ambient Temperature
μPC844G2 : TA = -40 ~ +85 C, μPC4744G2 : TA = -20 ~ +80 C,
μPC844GR-9LG : TA = -40 ~ +125 C, μPC4744GR-9LG : TA = -40 ~ +85 C,
Stability to capacitive load (Capacitive load, 1000 pF)
Built-in phase correction circuit.
Built-in output short-circuit protection circuit.
Standard pin (pin compatible) configuration of a quad operational amplifier.
ORDERING INFORMATION
Order Name Selected Grade Package
μPC844G2-A Standard 14-pin plastic SOP ( 5.72 mm ( 225 ))
μPC4744G2-A Standard 14-pin plastic SOP ( 5.72 mm ( 225 ))
μPC844GR-9LG-A Standard 14-pin plastic TSSOP ( 5.72 mm ( 225 ))
μPC4744GR-9LG-A Standard 14-pin plastic TSSOP ( 5.72 mm ( 225 ))
PIN CONFIGURATION (Top View)
1
+-
1
OUT
1
11 V
-
2
I
I1
3
I
N1
4
V
+
14 OUT
4
13 I
I4
12 I
N4
4
-+
3
+-
2
-+
7
OUT
2
6
I
I2
5
I
N2
8OUT
3
9I
I3
10 I
N3
R03DS0137EJ0100
Rev.1.00
2019.1.17
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 2 of 9
2019.1.17
EQUIVALENT CIRCUIT (1/4CIRCUIT)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Parameter Symbol μPC844G2 μPC4744G2 μPC844GR-
9LG
μPC4744GR-
9LG Unit
Power Supply Voltage Note 1 V
+ - V - -0.3 ~ +36 V
Differential Input Voltage VID ±36 V
Input Voltage Note 2 V
I V
- -0.3 ~ V - +36 V
Output Applied Voltage Note 3 V
O V
- -0.3 ~ V + +0.3 V
Total Power Dissipation Note 4 P
T 550 mW
Output Short Circuit Duration Note 5 t
S Indefinite s
Operating Ambient Temperature TA -40 ~ +85 -20 ~ +80 -40 ~ +125 -40 ~ +85 C
Storage Temperature Tstg -55 ~ +125 -55 ~ +150 -55 ~ +125 C
【Note】1. Note that reverse connections of the power supply may damage the ICs.
2. The allowable input voltage range without damaging or destructing the device. Independent to power supply
voltage range.。
Do not apply voltage equivalent to V - (GND) - 0.3 V or less.
Note that the operational amplifier will operate normally when the input voltage applied is within the common
mode input voltage range.
3. The input voltage range that can be applied to the output pin externally without deteriorating or damaging the
device characteristic. The permitted input voltage that can be applied regardless of the power supply voltage.
This specification also includes precaution during transition state such as ON/OFF, etc.
4. This is the value when the glass epoxy substrate (size: 100 mm x 100 mm, thickness: 1 mm, 15% of the
substrate area where only one side is copper foiled is filling wired) is mounted.
Note that restrictions will be made to the following conditions for each product, and the de-rating ratio depending
on the operating ambient temperature.
μPC844G2, 4744G2 : De-rate -5.5 mW/C when TA ＞ 25 C
(Junction − ambient thermal resistance Rth(J-A) = 182 C/W)
μPC844GR-9LG : De-rate -7.0 mW/C when TA ＞ 71 C
(Junction − ambient thermal resistance Rth(J-A) = 144 C/W)
μPC4744GR-9LG : De-rate -7.0 mW/C when TA ＞ 46 C。
(Junction − ambient thermal resistance Rth(J-A) = 144 C/W)
5. Please use the total loss and the de-rating factor of Note 4.
V
+
Q
7
I
N
V
-
Q
5
Q
6
Q
8
Q
13
OUT
Q
14
Q
18
I
I
Q
1
Q
2
Q
9
Q
10
Q
11
Q
12
Q
3
Q
4
Q
15
Q
16
Q
17
Q
20
Q
19
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 3 of 9
2019.1.17
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit
Power Supply Voltage (V - =
GND) V + +3 +5 ~ +30 +32 V
Power Supply Voltage (Dual
Supply) V ± ±1.5 ±16 V
Output Current IO ±10 mA
Capacitive Load (AV = +1) CL 1000 Note 6 pF
【Note】6. This is the value when feedback resistor (Rf) = 0 Ω.
ELECTRICAL CHARACTERISTICS
(TA = 25 C, V ± = ±15 V)
Parameter Symbol MIN. TYP. MAX. Unit Test Condition
Input Offset Voltage VIO ±2 ±6 mV
Input Offset Current IIO ±6 ±75 nA
Input Bias Current Note 7 I
B 130 500 nA
Large Signal Voltage Gain AV 25000 300000 RL ≧ 2 kΩ, VO = ±10 V
Circuit Current Note 8 I
CC 7.5 11 mA IO = 0 A
Common Mode Rejection Ratio CMR 70 86 dB
Supply Voltage Rejection Ratio SVR 70 93 dB
Output Voltage Swing
VOm1
±13.7 +14 V
RL ≧ 10 kΩ
-14.3
VOm2 ±13.5 V RL ≧ 2 kΩ
Common Mode Input Voltage
Range VICM V
- V
+ -1.8 V
Slew Rate SR 8.5 V/μs AV = 1 (Rise edge)
Gain Bandwidth Product GBW 3.5 MHz f = 100 kHz
Channel Separation 120 dB f = 20 Hz ~ 20 kHz
(TA = 25 C, V + = +5 V, V - = GND)
Parameter Symbol MIN. TYP. MAX. Unit Test Condition
Input Offset Voltage VIO ±2 ±5 mV
Input Offset Current IIO ±6 ±75 nA
Input Bias Current Note 7 I
B 150 500 nA
Large Signal Voltage Gain AV 25000 300000 RL ≧ 2 kΩ
Circuit Current Note 8 I
CC 6 9 mA IO = 0 A
Common Mode Rejection Ratio CMR 70 80 dB
Supply Voltage Rejection Ratio SVR 70 95 dB
Output Voltage Swing
VOm
3.7 4
V
RL ≧ 2 kΩ (Connected to
GND)
0 0
Common Mode Input Voltage
Range VICM 0 V
+ -1.8 V
Output Source Current IO
SOURCE 10 30 mA VIN(+) = +1 V, VIN(-) = 0 V
Output Sink Current IO SINK 10 30 mA V
IN(+) = 0 V, VIN(-) = +1 V
Slew Rate SR 7 V/μs AV = 1 (Rise)
【Note】7. The current flow direction of the input bias is out from the IC because the first stage of the IC composed of PNP
transistor.
8. Current flowing through the internal circuit. This current flow regardless of the channel used.
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 4 of 9
2019.1.17
CHARACTERISTICS CURVE (TA = 25 C, TYP.) (REFERENCE VALUE)
0
200
400
600
800
1000
0 20406080100120140
Total Power Dissipation, PT[mW]
Operating Ambient Temperature, TA[C]
PTvs. TA
With 100 mm x 100 mm,
thickness 1 mm glass
epoxy substrate (refer to
"ABSOLUTE MAXIMUM
RATINGS Note4")
TA = -40 °C
TA= 25 °C
TA= 125 °C
0
4
8
12
16
0 10203040
Supply Current, ICC [mA]
Power Supply Voltage, V +[V] (V -= GND)
ICC vs. V +
ICC
V+
-
+
A
1 V
IO= 0 A
-2
-1
0
1
2
0 10203040
Input Offset Voltage, VIO [mV]
Power Supply Voltage, V +[V] (V -= GND)
VIO vs. V +
-4
-3
-2
-1
0
1
2
3
4
-50 0 50 100 150
Input Offset Voltage, VIO [mV]
Operating Ambient Temperature, TA[°C]
VIO vs. TA
V±= ±15 V
Random Five Samples Values
-10
0
10
20
30
40
0 10203040
Common mode input voltage range, VICM [V]
Power Supply Voltage, V +[V] (V -= GND)
VICM vs. V +
VICM -
VICM +
0
50
100
150
200
0 10203040
Input Bias Current, IB[nA]
Power Supply Voltage, V +[V] (V -= GND)
IBvs. V +
VIN = V + /2
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 5 of 9
2019.1.17
0
50
100
150
200
-50 0 50 100 150
Input Bias Current, IB[nA]
Operating Ambient Temperature, TA[°C]
IBvs. TA
V±= ±15 V
0
10
20
30
1k 10k 100k 1M 10M
Output Voltage Swing, VO[Vp-p]
Frequency, f [Hz]
VOvs. f
V±= ±15 V
RL= 2 kΩ
V±= ±15 V
V±= ±15 V
V±= ±2.5 V
V±= ±2.5 V
0
20
40
60
80
100
120
0.1 1 10 100 1k 10k 100k 1M 10M
Voltage Gain, AV[dB], Phase Margin, φ
[deg]
Frequency, f [Hz]
AV,φvs. f
RL= 2 kΩ
φ
AV
During Rise Time
During Fall Time
0
2
4
6
8
10
12
-50 0 50 100 150
Slew Rate, SR [V/μs]
Operating Ambient Temperature, TA[°C]
SR vs. TA
V±= ±15 V
VO= ±1 V
RL= 2 kΩ
0
1
2
3
01234
Input Voltage, VIN [V]
Time, t [μs]
Pulse Response
0
1
2
3
Output Voltage, VO[V]
RL= 2 kΩ
V+= +5 V
V-= GND
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 6 of 9
2019.1.17
TA = -40 °C
TA = 25 °C
TA = 125 °C
0.1
1
10
0.01 0.1 1 10 100
Output Voltage, VO[V]
Output Sink Current, IOSINK [mA]
VOvs. IOSINK
V+
IO SINK
VO
V+/2 -
+
V+= +15 V
TA = -40 °C
TA = 25 °C
TA = 125 °C
0
1
2
3
4
5
0.01 0.1 1 10 100
Output Voltage to V+ - V, ⊿VO[V]
Output Source Current, IO SOURCE [mA]
⊿VOvs. IO SOURCE
IO SOURCE
⊿VO
+
-
V+
V+/2
V+= +15 V
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 7 of 9
2019.1.17
USE WITH PRECAUTIONS
Managing unused circuits
If there is an unused circuit, the following connection is recommended.
Process example of unused circuits
Remark: In this example, an intermediate potential between V + and V - is applied.
Ratings of input/output pin voltage
When the voltage of input/output pin exceeds the absolute maximum rating, the parasitic diode within the
IC may conduct, causing characteristics degradation or damage. In addition, if the input pin is lower than
V−, or the output pin exceeds the power supply voltage, it is recommended to make a clamping circuit using
a diode with low forward voltage (e.g.: Schottky diode) as protection.
Range of common-mode input voltage
When the supply voltage does not meet the condition of electrical characteristics, the range of common-
mode input voltage is as follows.
VICM (TYP.) : V - ~ V + -1.8 [V] (TA = 25 C)
During designing, do include some tolerance by considering temperature characteristics etc.
Maximum Output Voltage
The TYP. value range of the maximum output voltage when the supply voltage does not meet the condition
of electrical characteristics is as follows:
VOm + (TYP.) : V + -1 [V] (TA = 25 C), VOm - (TYP.) : V - +0.7 [V] (TA = 25 C)
During designing, do include some tolerance by considering characteristics variation, temperature
characteristics and so on. In addition, also note that the output voltage range (Vom+ − Vom−) will become
narrow when the output current increases.
Output Operation
This IC will not be able to sink output current when the output voltage is V− + 0.7 V and below. In this case,
the output voltage level can be improved to the V- side by connecting the load resistor between the output
terminal and V- to sink the current at the load resistor. (The effect will differ depending on the
flow of current in the load resistance.)
Handling of ICs
When stress is added to the ICs due to warpage or bending of a board, the characteristic may fluctuates
due to piezoelectric effect. Therefore, pay attention to warpage or bending of a board.
V-
+
-
V-
V+
V+
R
R
同相入力電圧範囲
(VICM) 内の電位へ
To potentials within
the range of common-
mode input voltage
(VICM)
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 8 of 9
2019.1.17
PACKAGE DRAWINGS
14-PIN PLASTIC SOP
JEITA Package code RENESAS code Previous code MASS (TYP.) [g]
P-SOP14-0225-1.27 PRSP0014DI-A P14GR-50-225B 0.14
ITEM
A
B
C
D0.42
+0.08
-0.07
E
F1.59
+0.21
-0.2
G1.49
H
I
J
K0.17
+0.08
-0.07
L
M
N
P3°
+7°
-3°
0.10
MILLIMETERS
1.42 MAX
1.27 (T.P)
0.1 ±0.1
10.2 ±0.26
6.5 ±0.2
4.4 ±0.1
1.1 ±0.16
0.6 ±0.2
0.1
Unit : mm
NOTE
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
detail of lead end
μPC844, μPC4744
R03DS0137EJ0100 Rev.1.00 Page 9 of 9
2019.1.17
14-PIN PLASTIC TSSOP
JEITA Package code RENESAS code Previous code MASS(TYP.) [g]
P-TSSOP14-0225-0.65 PTSP0014JB-A P14GR-65-9LG-1 －
ITEM
D
D1
E
HE
A
A1
A2
A3 0.25
+0.06
-0.05
c
L0.5
Lp
L1
+5°
-3°
e0.65
x0.10
y0.10
ZD 0.625
0.60 ±0.15
1.00 ±0.20
θ3
°
1.20 MAX.
0.10 ±0.05
1.00 ±0.05
b0.24
0.145 ±0.055
MILLIMETERS
5.15 ±0.15
5.00 ±0.10
4.40 ±0.10
6.40 ±0.20
Unit : mm
NOTE
Each lead centerline is located within 0.10 mm of
its true position at maximum material condition.
detail of lead end
© 2018 Renesas Electronics Corporation. All rights reserved.
Colophon 7.2
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7. 虽然瑞萨电子一直致力于提高瑞萨电子产品的质量和可靠性，但是，半导体产品有其自身的具体特性，如一定的故障发生率以及在某些使用条件下会发生故障等。除非是瑞萨电子数据表或其他瑞萨电子文档中
指定为高可靠性产品或用于恶劣环境的产品，否则瑞萨电子产品未进行防辐射设计。用户负责执行安全保护措施，以避免因瑞萨电子产品失效或发生故障而造成身体伤害、火灾导致伤害或损害和/或其他对公众
构成危险的事故。例如进行软硬件安全设计（包括但不限于冗余设计、防火控制以及故障预防等）、适当的老化处理或其他适当的措施等。由于对微机软件单独进行评估非常困难且不实际，所以请用户自行负
责对最终产品或系统进行安全评估。
8. 关于环境保护方面的详细内容，例如每种瑞萨电子产品的环境兼容性等，请与瑞萨电子的营业部门联系。用户负责仔细并充分查阅对管制物质的使用或含量进行管理的所有适用法律法规（包括但不限于《欧盟
RoHS指令》），并在使用瑞萨电子产品时遵守所有适用法律法规。对于因用户未遵守相应法律法规而导致的损害或损失，瑞萨电子概不承担任何责任。
9. 不可将瑞萨电子产品和技术用于或者嵌入日本国内或海外相应的法律法规所禁止生产、使用及销售的任何产品或系统中。也不可将瑞萨电子产品或技术用于(1)与大规模杀伤性武器（例如核武器、化学武器、生
物武器或运送此等武器的导弹，包括无人机(UAV)）的开发、设计、制造、使用、存储等相关的任何目的；(2)与常规武器的开发、设计、制造或使用相关的任何目的；(3)扰乱国际和平与安全的任何其他目的，
并且不可向任何第三方销售、出口、租赁、转让、或让与瑞萨电子产品或技术，无论直接或间接知悉或者有理由知悉该第三方或任何其他方将从事上述活动。用户必须遵守对各方或交易行使司法管辖权的任意
国家/地区政府所公布和管理的任何适用出口管制法律法规。
10. 瑞萨电子产品的买方或分销商，或者分销、处置产品、或以其他方式向第三方出售或转让产品的任何其他方有责任事先向所述第三方通知本文档规定的内容和条件。
11. 在事先未得到瑞萨电子书面认可的情况下，不得以任何形式部分或全部再版、转载或复制本文档。
12. 如果对本文档所记载的信息或瑞萨电子产品有任何疑问，请向瑞萨电子的营业部门咨询。
（注1） 瑞萨电子：在本文档中指瑞萨电子株式会社及其控股子公司。
（注2） 瑞萨电子产品：指瑞萨电子开发或生产的任何产品。
http://www.renesas.com
SALES OFFICES
Renesas Electronics Corporation
TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan
Renesas Electronics America Inc.
1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A.
Tel: +1-408-432-8888, Fax: +1-408-434-5351
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok,
Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050
Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5338
Refer to "http://www.renesas.com/" for the latest and detailed information.
(Rev.4.0-1 November 2017)
