REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) A Table I changes; CIN, fMAX2 for device 02, fMAX3 for device 01, fMAX4 for devices 01 and 02, tHPT, tSPT, tIHPT, tISPT and tSLEW for devices 01 and 02, editorial changes Table I and Terminal connections. ksr B Boilerplate update and part of five year review. tcr 01 - 06 - 05 APPROVED Raymond Monnin 05-12-29 Raymond Monnin REV SHEET REV B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 REV B B B B B B B B B B B B B B SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV STATUS OF SHEETS PMIC N/A PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Kenneth Rice STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY All COLUMBUS, OHIO 43218-3990 CHECKED BY http://www.dscc.dla.mil Jeff Bowling APPROVED BY Raymond Monnin DRAWING APPROVAL DATE DEPARTMENTS AND AGENCIES OF THE 00-03-09 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ALTERABLE (IN-SYS REPROGRAMMABLE), 256 MACROCELL, PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON DEPARTMENT OF DEFENSE REVISION LEVEL AMSC N/A B SIZE A SHEET DSCC FORM 2233 APR 97 CAGE CODE 5962-99523 67268 1 OF 23 5962- E164-06 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 99523 Federal stock class designator \ RHA designator (see 1.2.1) 01 Q X X Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 01 02 Generic number Circuit function CY37256 CY37256 Toggle Speed (Mhz) 256 Macrocell CPLD 256 Macrocell CPLD 83 125 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Z Descriptive designator See figure 1 Terminals Package style 160 Quad flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 2 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) --------------------------------------Programming supply voltage range (VPP) --------------------DC input voltage range ------------------------------------------Maximum power dissipation -------------------------------------Lead temperature (soldering, 10 seconds) -----------------Thermal resistance, junction-to-case (JC): Case outline Z -----------------------------------------------------Junction temperature (TJ) ----------------------------------------Storage temperature range --------------------------------------Endurance ---------------------------------------------------------Data retention -------------------------------------------------------- -0.5 V dc to +7.0 V dc 4.5 V dc to 5.5 V dc -0.5 V dc to +7.0 V dc 2.0 W 2/ +260C 7.2 C/W +150C 3/ -65C to +150C 25 erase/write cycles (minimum) 10 years (minimum) 1.4 Recommended operating conditions. 4/ Case operating temperature Range(TC)----------------------Supply voltage relative to ground(VCC) -----------------------Ground voltage (GND) --------------------------------------------Input high voltage (VIH) -------------------------------------------Input low voltage (VIL) ---------------------------------------------- -55C to +125C +4.5 V dc minimum to +5.5 V dc maximum 0 V dc 2.0 V dc minimum 0.8 V dc maximum 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the added PD due to short circuit test (e.g., IOS). 3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 4/ All voltage values in this drawing are with respect to VSS. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 3 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192M-95 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http://www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http://www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 4 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing CPLDs. All testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.11.1 Erasure of CPLDs. When specified, devices shall be erased in accordance with the procedures and characteristics specified in 4.6 herein. 3.11.2 Programmability of CPLDs. When specified, devices shall be programmed to the specified pattern using the procedures and characteristics specified in 4.7 herein. 3.11.3 Verification of erasure or programmed CPLDs. When specified, devices shall be verified as either programmed (see 4.7 herein) to the specified pattern or erased (see 4.6 herein). As a minimum, verification shall consist of performing a functional test (subgroup 7) to verify that all bits are in the proper state. Any bit that does not verify to be in the proper state shall constitute a device failure, and shall be removed from the lot. 3.12 Endurance. A reprogrammability test shall be completed as part of the vendor's reliability monitor. This reprogrammability test shall be done only for initial characterization and after any design or process changes which may affect the reprogrammability of the device. The methods and procedures may be vendor specific, but shall be under document control and shall be made available upon request. 3.13 Data retention. A data retention stress test shall be completed as part of the vendor's reliability monitors. This test shall be done for initial characterization and after any design or process change which may affect data retention. The methods and procedures may be vendor specific, but shall guarantee the number of years listed in section 1.3 herein, over the full military temperature range. The vendor's procedure shall be kept under document control and shall be made available upon request by the preparing or acquiring activity, along with the test data. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 5 Test Symbol TABLE I. Electrical performance characteristics. Group A Conditions Subgroups 4.5 V < VCC < 5.5 V -55oC < TC < +125oC unless otherwise specified Device type Unit Limits Min Max High Level output voltage VOH VCC = 4.5 V, VIL = 0.8V IOH = -2.0 mA, VIH = 2.0 V 1/ High Level output voltage with Output Disabled 2/ VOHZ VCC = 5.5 V, VIL = 0.8V IOH = 0 A, VIH = 2.0 V 3/ 4.5 V VCC = 5.5 V, VIL = 0.8V IOH = -150 A, VIH = 2.0 V 3/ 3.6 V VCC = 4.5 V, IOL = 12.0 mA VIL = 0.8 V, VIH = 2.0 V 1/ 0.5 V VCC+ 0.5 V V 1, 2, 3 All 2.4 V Low level output voltage VOL High level input voltage 4/ VIH 2 Low level input voltage 4/ VIL -0.5 0.8 V Input load current IIX VIN = 0 V or VCC, with Busshold off -10 +10 A Output leakage current IOZ VCC = 5.5 V VO = GND or VCC, Output disabled, Busshold off -50 +50 A Output short circuit current 2/ 5/ IOS VCC = 5.5 V, VOUT = 0.5 V -30 Power supply current 6/ ICC VCC = 5.5 V, IOUT = 0 mA, VIN = 0 V and 5.5 V f = 1.0 MHz -160 300 mA mA Input bus hold low sustained current 2/ IBHL VCC = 4.5 V,VIL = 0.8 V +75 A Input bus hold high sustained current 2/ IBHH VCC = 4.5 V,VIH = 2.0 V -75 A Input bus hold low sustained overdrive current 2/ IBHLO VCC = 5.5 V +500 A Input bus hold high sustained overdrive current 2/ IBHHO VCC = 5.5 V -500 A See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 6 TABLE I. Electrical performance characteristics - Continued. Test Input capacitance 2/ Symbol CIN Conditions 4.5 V < VCC < 5.5 V -55oC < TC < +125oC unless otherwise specified See 4.4.1e, VIN = 5.0 V, f = 1 Mhz, TA = 25C Group A Subgroups Device type 4 All Unit Limits Min Max 10 Output capacitance 2/ COUT 12 Dual functional pin capacitance 2/ CDP 16 Functional test Input to combinatorial output 7/ 8/ 9/ 10/ See 4.4.1c tPD Input to output through transparent input or output latch 2/ 7/ 8/ 9/10/ tPDL Input to output through transparent input and output latch 2/ 7/ 8/ 9/ 10/ tPDLL Input to output enable see figure 3 test waveforms 2/ 7/ 8/ 9/10/ tEA Input to output disable see figure 3 test waveforms 2/ 7/ 8/ tER Clock or Latch enable input High time 2/ 7/ tWH Clock or latch enable input low time 2/ 7/ tWL Input register or latch set-up time 2/ 7/ tIS Input register or latch hold time 2/ 7/ tIH Input register clock or latch enable to combinatorial output 2/ 7/ 8/ 9/10/ tICO See figures 3 and 4 (circuit A) See figures 3 and 4 (circuit A) 7,8A,8B All 9, 10, 11 01 15 02 10 01 19 02 16.5 01 20 02 17.5 01 19 02 14 01 19 02 14 pF ns 9, 10, 11 See figures 3 and 4 (circuit B) See figures 3 and 4 (circuit A) 01 4 02 3 01 4 02 3 01 3 02 2 01 3 02 2 01 19 02 12.5 See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 4.5 V < VCC < 5.5 V -55oC < TC < +125oC unless otherwise specified See figures 3 and 4 (circuit A) Unit Group A Subgroups Device type 9, 10, 11 01 21 02 16 01 8 02 6.5 Limits Min Max Input register clock or latch enable to output through transparent output latch 2/ 7/ 8/ 9/10/ tICOL Synchronous clock or latch enable to output 7/ 9/10/ tCO Register or latch data hold time 7/ tH All 0 ns Set-up time from input to synchronous clock or latch enable 7/ 8/ tS 01 8 ns 02 5.5 Set-up time from input through transparent latch to output register Synchronous clock or latch enable 2/ 7/ 8/ tSL 01 15 02 10 Output Synchronous clock or latch enable to combinatorial output delay (through memory array) 2/ 7/ 8/ 9/ 10/ tCO2 Output Synchronous clock or latch enable to output synchronous clock or latch enable (through logic array) 7/ 8/ tSCS Hold time for input through transparent latch from output register Synchronous clock or latch enable 2/ 7/ Maximum frequency with internal feedback (lesser of 1/tSCS, 1/(tS + tH), or 1/tCO) 2/ 7/ ns ns ns 01 19 02 14 ns 01 12 02 8 tHL All 0 ns fMAX1 01 83 Mhz 02 125 ns See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 8 TABLE I. Electrical performance characteristics - Continued. Test Symbol Maximum frequency data path in output register/latched mode (lesser of 1/(tWL + tWH), 1/(tS + tH), or 1/tCO) 2/ 7/ fMAX2 Maximum frequency with external feedback (lesser of 1/(tCO + tS),or 1/(tWL + tWH) 2/ 7/ fMAX3 Maximum frequency in pipelined mode (lesser of 1/(tCO + tIS), 1/tICS, 1/(tWL + tWH), 1/(tIS + tIH),or 1/tSCS 2/ 7/ fMAX4 Input register Synchronous clock to output register clock 2/ 7/ 8/ tICS Asynchronous preset width 2/ 7/ tPW Asynchronous preset recovery time 2/ 7/ 8/ tPR Asynchronous preset to output 2/ 7/ 8/ 9/10/ tPO Asynchronous reset width 2/ 7/ tRW Asynchronous reset recovery time 2/ 7/ 8/ tRR Asynchronous reset to output 2/ 7/ 8/ 9/ 10/ tRO Product term clock or latch enable (PTCLK) to output 2/ 7/ 8/ 9/ 10/ tCOPT Register or latch data hold time 2/ 7/ tHPT Set-up time from input to product term clock or latch enable(PTCLK) 2/ 7/ Group A Subgroups Conditions 4.5 V < VCC < 5.5 V -55oC < TC < +125oC unless otherwise specified 9, 10, 11 See figures 3 and 4 (circuit A) tSPT Device type Unit Limits Min 01 125 02 154 01 62.5 02 83 01 83 02 118 01 12 02 8 01 15 02 10 01 17 02 12 Max MHz ns 01 21 02 15 01 15 02 10 01 17 02 12 01 21 02 15 01 15 02 13 01 6.0 02 5.0 01 6.0 02 5.0 See footnotes at the end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 9 TABLE I. Electrical performance characteristics - Continued. Test Symbol Set-up time for buried register used as an input register from input to product term clock or latch enable (PTCLK) 2/ 7/ 8/ tISPT Buried register used as an input register or latch data hold time 2/ 7/ tIHPT Product term clock or latch enable (PTCLK) to output delay (through logic array) 2/ 7/ 8/ 9/10/ tCO2PT Group A Subgroups Conditions 4.5 V < VCC < 5.5 V -55oC < TC < +125oC unless otherwise specified See figures 3 and 4 (circuit A) 9, 10, 11 Device type Unit Limits Min All 0 01 14 02 9 Max ns 01 24 02 19 tLP All 2.5 Slow output slew rate adder 2/ 7/ tSLEW All 3.0 3.3 V I/O mode timing adder 2/ 7/ t3.3IO All 0.3 Set-up time from TDI and TMS to TCK 2/ 7/ tS JTAG All 0 Hold time on TDI and TMS 2/ 7/ tH JTAG All 20 Falling edge of TCK to TDO 2/ 7/ tCO JTAG All Low power adder 2/ 7/ Maximum JTAG tap controller frequency 7/ 20 20 fJTAG 2/ MHz All 1/ IOH = -2 mA, IOL = +2 mA for TDO. 2/ Tested initially and after any design or process changes that affect this parameter. 3/ When the I/O is output disabled, the bus-hold circuit can weakly pull the I/O to a maximum of 3.6 V if no leakage current is allowed. This voltage is lowered significantly by a small leakage current. Note that all I/Os are output disabled during ISR programming. Contact manufacturer for additional information. 4/ These are absolute values with respect to device ground, and all overshoots due to system or tester noise are included. 5/ Not more than one output should be tested at a time. Duration of the short circuit should not exceed 1 second. VOUT = 0.5 V has been chosen to avoid test problems caused by tester ground degradation. 6/ Measured under AC conditions. Program pattern using 16-bit counter per logic block or equivalent. 7/ All AC parameters are measured with 2 outputs switching, and 35 pF AC test load, unless otherwise specified. 8/ Logic blocks operating in low power mode, add tLP to this spec. 9/ Outputs using slow output slew rate, add tSLEW to this spec. 10/ When VCCO = 3.3 V add t3.3IO to this spec. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 10 Case Z FIGURE 1. Case outline. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 11 Case outline Z Device type All Device type All Device type All Terminal number Terminal symbol Terminal number Terminal symbol Terminal number Terminal symbol GND I/O I/O I/O I/O I/O/TCK I/O I/O I/O GND I/O I/O I/O I/O I/O I/O I/O I/O CLK/I VCC0 GND CLK/I I/O I/O I/O I/O I/O I/O I/O I/O GND I/O I/O I/O I/O I/O I/O I/O I/O VCC0 GND I/O I/O I/O I/O I/O/TMS I/O I/O I/O GND I/O I/O I/O I/O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 I/O I/O I/O I/O I VCC0 GND VCC I/O I/O I/O I/O I/O I/O I/O I/O GND I/O I/O I/O I/O I/O/TDO I/O I/O I/O VCC0 GND I/O I/O I/O I/O I/O I/O I/O I/O GND I/O I/O I/O I/O I/O I/O I/O I/O CLK/I VCC0 GND CLK/I I/O I/O I/O I/O I/O 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 I/O I/O I/O GND I/O I/O I/O I/O I/O/TD1 I/O I/O I/O VCC0 GND I/O I/O I/O I/O I/O I/O I/O I/O GND I/O I/O I/O I/O I/O I/O I/O I/O JTAGEN VCC GND VCC0 I/O I/O I/O I/O I/O I/O I/O I/O GND I/O I/O I/O I/O I/O I/O I/O I/O VCC0 FIGURE 2. Terminal connections. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 12 FIGURE 3. Output load circuits and test conditions. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 13 1.5 V FIGURE 3. Output load circuits and test conditions - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 14 FIGURE 4. Switching waveforms. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 15 FIGURE 4. Switching waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 16 FIGURE 4. Switching waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 17 FIGURE 4. Switching waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 18 FIGURE 4. Switching waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 19 FIGURE 4. Switching waveforms - Continued. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 20 TABLE IIA. Electrical test requirements. 1/ 2/ 3/ 4/ 5/ 6/ 7/ Line no. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M 1 Interim electrical Parameters (see 4.2) 2 Static burn-in (method 1015) 3 Same as line 1 4 Dynamic burn-in (method 1015) 5 Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V 1,7,9 or 2,8A,10 Not Required Not Required Required 1*,7* Required Required Required Final electrical parameters 1*,2,3,7*, 8A,8B,9,10, 11 1*,2,3,7*, 8A,8B,9,10, 11 1*,2,3,7*, 8A,8B,9,10, 11 6 Group A test requirements 1,2,3,4**,7, 8A,8B,9,10, 11 1,2,3,4**,7, 8A,8B,9,10, 11 1,2,3,4**,7, 8A,8B,9,10, 11 7 Group C end-point electrical parameters 2,3,7, 8A,8B 2,3,7, 8A,8B 1,2,3,7, 8A,8B,9, 10,11 8 Group D end-point electrical parameters 2,3, 8A,8B 2,3, 8A,8B 2,3, 8A,8B 9 Group E end-point electrical parameters 1,7,9 1,7,9 1,7,9 1/ 2/ 3/ 4/ 5/ 6/ Blank spaces indicate tests are not applicable. Any or all subgroups may be combined when using high-speed testers. Subgroups 7 and 8 functional tests shall verify the truth table. * indicates PDA applies to subgroup 1 and 7. ** see 4.4.1e. indicates delta limit (see table IIB) shall be required where specified, and the delta values shall be computed with reference to the previous interim electrical parameters (see line 1). 7/ See 4.4.1d. TABLE IIB. Delta limits at +25C. Parameter 1/ Device types All IOZ 10% of the specified value in table I IIX 10% of the specified value in table I 1/ The above parameter shall be recorded before and after the required burn-in and life tests to determine the delta . STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 21 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. b. Prior to burn-in, the devices shall be programmed (see 4.7 herein) with a checkerboard pattern or equivalent (manufacturers at their option may employ an equivalent pattern provided it is topologically true alternating bit pattern). The pattern shall be read before and after burn-in. Devices having bits not in the proper state after burn-in shall constitute a device failure and shall be removed from the lot. The manufacturer as an option may use built-in test circuitry by testing the entire lot to verify programmability and AC performance without programming the user array. c. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. For device class M the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. d. Interim and final electrical parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 22 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 5 and 6 of table I of method 5005 of MIL-STD-883 shall be omitted. c. For device class M subgroups 7, 8A and 8B tests shall consist of verifying functionality of the device. These tests form a part of the vendors test tape and shall be maintained and available upon request. For device classes Q and V subgroups 7, 8A and 8B shall include verifying the functionality of the device. d. O/V (latch-up) tests shall be measured only for initial qualification and after any design or process changes which may affect the performance of the device. For device class M, procedures and circuits shall be maintained under document revision level control by the manufacturer and shall be made available to the preparing activity or acquiring activity upon request. For device classes Q and V, the procedures and circuits shall be under the control of the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the preparing activity or acquiring activity upon request. Testing shall be on all pins, on five devices with zero failures. Latch-up test shall be considered destructive. Information contained in JEDEC Standard EIA/JESD78 may be used for reference. e. Subgroup 4 (CIN, COUT, and CDP measurements) shall be measured only for initial qualification and after any process or design changes which may affect capacitance. Capacitance shall be measured between the designated terminal and GND at a frequency of 1 MHz. Sample size is three devices with no failures, and all input and output terminals tested. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005: a. Test condition D . The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MILSTD-883. b. TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 23 4.5 Delta measurements for device class V. Delta measurements, as specified in table IIA, shall be made and recorded before and after the required burn-in screens and steady-state life tests to determine delta compliance. The electrical parameters to be measured, with associated delta limits are listed in table IIB. The device manufacturer may, at his option, either perform delta measurements or within 24 hours after burn-in perform final electrical parameter tests, subgroups 1, 7, and 9. 4.6 Erasure procedures. Erasure procedures shall be as specified by the device manufacturer and shall be made available upon request. 4.7 Programming procedures. The programming procedures shall be as specified by the device manufacturer and shall be made available upon request. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone (614) 692-0547. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DSCC-VA. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99523 A REVISION LEVEL B SHEET 24 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 05-12-29 Approved sources of supply for SMD 5962-99523 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN Vendor CAGE number Vendor similar PIN 2/ 5962-9952301QZC 65786 CY37256P160-83UMB 5962-9952302QZC 65786 CY37256P160-125UMB 1/ 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed, contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 65786 Vendor name and address Cypress Semiconductor 3901 North First Street San Jose, CA 95134 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin.