2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching Absolute Maximum Ratings bal g max.5.a% < max05? Metal case JEDEC TO-18 18 A3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Symbol Value Unit Collector Base Voltage Voso 60 Vv Collector Emitter Voltage ~Vceo 60 Vv Emitter Base Voltage VesBo 5 V Collector Current lc 0.6 A Power Dissipation at Tamp = 25 C Prot 0.4 Ww at Tc = 25C Prot 1.8 Ww Junction Temperature Tj 200 C Storage Temperature Range Ts 65... +200 C -30V ty <200ns 100 0 50 Fig. 1: Test circuit for turn-on time, saturated operation Fig. 2: Fig. 3: Test circuit for turn-off time, Test circuit for non-satured saturated operation operation 1522N2906A, 2N2907A Characteristics at T; = 25 C Symbol Min. Typ. Max. Unit DC Current Gain at-Vce = 10 V,-Ic = 0.1 mA 2N2906A hee 40 - 2N2907A hee 75 _ = - at Vce =10V, Ic =i1imA 2N2906A hee 40 _ > - 2N2907A Nee 100 - = - at Vce = 10 V, lo =10mA 2N2906A Nee 40 - - - 2N2907A hee 100 - - at -Vce = 10 V, -Ile = 150 mA 2N2906A Are 40 = 120 - 2N2907A Are 100 300 - at-Vce = 10 V,-lp = O0.5A 2N2906A Nee 40 = _ ~ 2N2907A hee 50 = - Collector Saturation Voltage atIc = 150 mA, -lg = 15mMA Veesat - - 0.4 Vv at Ic = 500 mA, lg = 50mA Vcesat - - 1.6 V Base Saturation Voltage at lo = 150 mA, lp =15mA VeeEsat - _ 1.3 V at -Ic = 500 mA, ~lp =50mA Veesat - - 2.6 Vv Collector Cutoff Current atVcg = 50V lcso - _ 10 nA at Vcp = 50 V, Tamb = 150C IcBo - _ 10 pA at Vece = 30V, Vep =0.5V Icev - _ 50 nA Base Cutoff Current at ~Vcoe = 30 V, Veg = 0.5 V lepy - - 50 nA Collector Base Breakdown Voltage at Ic = 10 nA V(eR)cBo 60 - - Vv Collector Emitter Breakdown Voltage atIc = 10 mA V(BR)CEO 60 _ - Vv Emitter Base Breakdown Voltage at ~-l_ = 10 nA ~V(BR)EBO 5 - - Vv Gain Bandwidth Product fr 200 - ~ MHz at -Vce = 20 V, -Ilc = 50 mA, f = 100 MHz Collector Base Capacitance Coso - _ 8 pF at Vop = 10V,f = 100 kHz Emitter Base Capacitance at Veg = 2 V, f = 100 kHz Ceso - _ 30 pF Thermal Resistance Junction to Ambient Riha _ - 440 K/W Junction to Case Rihc _ 97 K/W Switching Times Delay Time (see Fig. 1) ta - 6 10 ns Rise Time (see Fig. 1) t _ 20 40 ns Turn-On Time (see Fig. 1) ton - 26 45 ns Storage Time (see Fig. 2) ts - 50 80 ns Fall Time (see Fig. 2) ty 20 30 ns Turn-Off Time (see Fig. 2) tort _ 70 100 ns Total Switching Time (see Fig. 3) trotal _ 12 - ns 153