MICROWA VE TERMINATIONS W AMT SERIES WAMT Series offers special resistor patterning to enhance RF performance. Half-Wrap or Full-Wrap Terminations offer maximum flexibility in microwave applications. These resistors are constructed using our proven proprietary thin film processes. W MECHANICAL DA TA DAT T L Full Wrap Around W T L MICROWAVE & RF RESISTORS Half-Wrap T L W 0.040" x 0.020" x 0.010" 0.035" x 0.035" x 0.010" 0.075" x 0.050" x 0.010" 0.050" x 0.050" x 0.010" 0.126" x 0.063" x 0.010" 0.100" x 0.050" x 0.010" 0.020" x 0.020" x 0.010" 0.055" x 0.025" x 0.010" 0.020" x 0.010" x 0.010" 99.6% ALUMINA, ALUMINUM NITRIDE NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM SERIES WAMT - 1 WAMT - 2 WAMT - 3 WAMT - 4 WAMT - 5 WAMT - 6 WAMT - 7 WAMT - 8 WAMT - 21 SUBSTRA TE SUBSTRATE RESISTOR BOND P ADS PADS AND WRAP AROUND WRAPAROUND TERMINA TIONS TERMINATIONS TOLERANCE (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") (0.003") GOLD WITH NICKEL BARRIER ST ANDARD. STANDARD. OPTIONAL WITH SOLDER; OR HALF-WRAP TERMINA TION TERMINATION ELECTRICAL DA TA DAT SERIES WAMT - 1 WAMT - 2 WAMT - 3 WAMT - 4 WAMT - 5 WAMT - 6 WAMT - 7 WAMT - 8 WAMT - 21 ABSOLUTE TOLERANCE T.C.R. OHMIC VALUE 6 - 1K K 25 - 1K 25 K 25 - 1K 25 K 25 - 1K 25 K 25 - 1K 25 K 25 - 1K 25 K 25 - 1K 25 K 25 - 1K 25 K 2 - 400 400 POWER RA TING @ 70C RATING 125mW 250mW 250mW 250mW 500mW 250mW 125mW 250mW 50mW 1%, 2%, 5%, 10% 25ppm/C ST ANDARD (NiCr) STANDARD 150ppm/C ST ANDARD (T aN); TO 50ppm/ VAILABLE STANDARD (TaN); 50ppm/C A AV CONSUL T SALES FOR OTHER V ALUES CONSULT VALUES SERIES DA TA DAT 101 TO 250K : -40dB; 100 , 250K : -30dB 101 250K 100 250K 10 12 MIN. 100 V MAX. 5X RA TED POWER, 25 0. RATED 25C, 5 SEC., 0. 0.225% MAX. R/R: 0.1% MSI TYPICAL 03 % MSI TYPICAL 150C, 100 HRS., 0.25% 0.25% MAX. R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. R/R: 0.1% MSI TYPICAL 107F,, 0.25% MIL-STD 202, METHOD 106, 0. 0. 0.55 % MAX. R/R: 0. 0.11 % MSI TYPICAL 1000 HRS., 70 C, 100% POWER 0.5% MAX. R/R: 0.1% MSI TYPICAL 70C, POWER,, 0.5% -5 -555C TO +150C DC THROUGH 20 GHz CURRENT NOISE INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING FREQUENCY STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA 0.06pF PART NUMBER DESIGNA TION DESIGNATION X X SERIES SUBSTRA TE SUBSTRATE 1, 2 3, 4 5, 6 7, 8 21 A = Alumina N = Aluminum Nitride WAMTX MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 119-D-0306 XXXXX X RESISTIVE FILM OHMIC VALUE TOLERANCE N = Nichrome T = Tantalum Nitride 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. Consult Sales for power capabilities on Aluminum Nitride. * For Conductive Epoxy Mount. ** For Solder Mount. *** Consult Sales for Availability. F G J K = 1% = 2% = 5% = 10% EXAMPLE: WAMT1 A T-50R00F-T = 0.040" x 0.020" x 0.010", Alumina Substrate, AT 50 , 1% TTol., ol., 150ppm/C, w/ Solder rap Around. 50 Solder.. Full W Wrap Solder option applies to all Conductor Surfaces X OPTION A = 50ppm/C F = 100ppm/C HWU = Half-Wrap Untinned T = With SN62 Solder ** T3 = Leadfree Solder TR = Tape and Reel *** U = Untinned* HWT = Half-Wrap Tinned. HWT3 = Half-Wrap Leadfree Tinned