SFH309 FA - Infineon Technologies

SFH 309

SFH 309 FA

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

SFH 309 SFH 309 FA

2001-02-22 1

Features

• Especially suitable for applications from

380 nm to 1180 nm (SFH 309) and of 880 nm

(SFH 309 FA)

• High linearity

• 3 mm LED plastic package

• Available in groups

Applications

• Photointerrupters

• Industrial electronics

• For control and drive circuits

Wesentliche Merkmale

• Speziell geeignet für Anwendungen im Bereich

von 380 nm bis 1180 nm (SFH 309) und bei

880 nm (SFH 309 FA)

• Hohe Linearität

• 3 mm-Plastikbauform im LED-Gehäuse

• Gruppiert lieferbar

Anwendungen

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code Typ

Type Bestellnummer

Ordering Codes

SFH 309 Q62702-P859 SFH 309 FA Q62702-P941

SFH 309-3/4 Q62702-P3592 SFH 309 FA-3/4 Q62702-P3590

SFH 309-4 Q62702-P998 SFH 309 FA-4 Q62702-P178

SFH 309-4/5 Q62702-P3593 SFH 309 FA-4/5 Q62702-P3591

SFH 309-5 Q62702-P999 SFH 309 FA-5 Q62702-P180

SFH 309-5/6 Q62702-P3594 SFH 309 FA-5/6 Q62702-P5199

2001-02-22 2

SFH 309, SFH 309 FA

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 100 °C

Löttemperatur bei Tauchlötung

Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s

Dip soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 5 s

TS260 °C

Löttemperatur bei Kolbenlötung

Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s

Iron soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 3 s

TS300 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 35 V

Kollektorstrom

Collector current IC15 mA

Kollektorspitzenstrom, τ < 10 µs

Collector surge current ICS 75 mA

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 165 mW

Wärmewiderstand

Thermal resistance RthJA 450 K/W

SFH 309, SFH 309 FA

2001-02-22 3

Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

SFH 309 SFH 309 FA

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λSmax 860 900 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectral range of sensitivity

S = 10% of Smax

λ380 …1150 730 …1120 nm

Bestrahlungsempfindl iche Fläche (∅ 220 µm)

Radiant sensitive area A0.038 0.038 mm2

Abmessungen der Chipfläche

Dimensions of chip area L×B

L×W0.45 ×0.45 0.45 ×0.45 mm ×mm

Abstand Chipoberfläche zu

Gehäuseoberfläche

Distance chip front to case surface

H2.4 …2.8 2.4 …2.8 mm

Halbwinkel

Half angle ϕ± 12 ± 12 Grad

deg.

Kapazität, VCE = 0 V, f = 1 MHz, E=0

Capacitance CCE 5.0 5.0 pF

Dunkelstrom

Dark current

VCE = 25 V, E=0

ICEO 1 (≤ 200) 1 (≤ 200) nA

2001-02-22 4

SFH 309, SFH 309 FA

Directional Characteristics Srel = f (ϕ)

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

-2 -3 -4 -5 -6

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

SFH 309:

Ev = 1000 Ix, Normlicht/

standard light A, VCE = 5 V

IPCE

0.4 …

0.8

1.5

0.63 …

1.25

2.8

1.0 …

2.0

4.5

1.6 …

3.2

7.2

2.5 …

5.0

11.2

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf56 789µs

Kollektor-Emitter-

Sättigungsspannung

Collector-emitter saturation

voltage

IC = IPCEmin1) × 0.3,

Ee = 0.5 mW/cm2

VCEsat 200 200 200 200 200 mV

1) IPCEmin ist der minima le F ot os tr om der jew eiligen Gru ppe.

1) IPCEmin is the min. pho to cu rrent of the specif ied group.

SFH 309, SFH 309 FA

2001-02-22 5

Relati ve Sp ectral Sensi ti vi ty,

SFH 309 Srel = f (λ)

Tota l Power Dissipati o n

Ptot = f (TA)

Dark Current

ICEO = f (TA), VCE = 25 V, E = 0

OHF01121

rel

400 600 800 1000 1200

100

OHF01530

CEO

-1

-25

0 25 50 75 100

˚C

Relative Spectral Sensitivity,

SFH 309 FA Srel = f (λ)

Photocurrent

IPCE = f (VCE), Ee = Par ame ter

Capacitance

CCE = f (VCE), f = 1 MHz, E = 0

OHF01528

-2

-1

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

5.0

Photocurrent

IPCE = f (Ee), VCE = 5 V

Dark Current

ICEO = f (VCE), E = 0

Photocurrent

IPCE/IPCE25° = f (TA), VCE = 5 V

OHF01527

CEO

-3

-2

-1

0 5 10 15 20 25 30 35V

OHF01524

-25

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 25 50 75 100

PCE

2001-02-22 6

SFH 309, SFH 309 FA

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.

0.6 (0.024)

0.4 (0.016)

4.0 (0.157)

3.6 (0.142)

ø3.1 (0.122)

ø2.9 (0.114)

4.1 (0.161)

3.9 (0.154)

5.2 (0.205)

4.5 (0.177)

3.5 (0.138)

6.3 (0.248)

5.9 (0.232)

1.8 (0.071)

1.2 (0.047)

29 (1.142)

27 (1.063)

2.54 (0.100)

spacing

0.7 (0.028)

0.4 (0.016)

Chip position

Collector (Transistor)

Area not flat

GEOY6653

0.4 (0.016)

0.8 (0.031)

Cathode (Diode)