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Page <1> V1.010/09/12
Transistor
Absolute Maximum Ratings:
Collector-Emitter Voltage, Vceo : 50V
Collector-Base Voltage, Vcbo : 75V
Emitter-Base Voltage, Vebo : 5V
Continuous Collector Current, Ic : 2A
Base Current, Ib : 1A
Total Power Dissipation (Tc = +25ºC), Pd : 10W
Derate Above 25°C : 0.057nw/°C
Operating Junction Temperature, Tj : -65ºC to 200ºC
Storage Temperature Range, Tstg : -65ºC to 200ºC
Thermal Resistance, Junction -to-Case, Rthjc : 17.5ºC/W
Electrical Characteristics: (Ta = +25ºC Unless otherwise specied):
Parameter Symbol Test Conditions Min Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 (Note1) 50 - V
Collector Cutoff Current Icex
Vce = 75V, Vbe = 1.5V - 0.1 mA
Vce = 45V, Vbe = 1.5V, Tc = +150°C - 5 mA
Emitter Cutoff Current Iebo Vbe = 5V, Ic = 0 - 0.1 mA
ON Characteristics (Note 1)
DC Current Gain hfe Ic = 500mA, Vce = 4V 40 250 -
Collector-Emitter Saturation Voltage Vce(sat)Ic = 500mA, Ib = 50mA - 1.2 V
Base-Emitter ON Voltage Vbe(on)Ic = 500mA, Vce = 4V - 1.4 V
Small-Signal Characteristics
Small-Signal Current Gain hfe Ic = 50mA, Vce = 4V, f = 10MHz 5.0 - -
Switching Characteristics
Turn-On Time ton Vcc = 30V, Ic = 500mA, Ib1 = 50mA - 100 ns
Turn-Off Time toff Vcc = 30V, Ic = 500mA, Ib2 = 50mA - 1,000 ns
Notes: 1. Pulse Test: Pulse Width <
=
300µs, Duty Cycle <
=
2%.