General Purpose Transistor (PNP) COMCHIP www.comchiptech.com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) Mechanical Data .016 (0.4) Case: SOT-23 Plastic Package Weight: approx. 0.008g Top View .056 (1.43) .052 (1.33) 3 1 .037(0.95) .037(0.95) 2 EMITTER .016 (0.4) .016 (0.4) .007 (0.175) .005 (0.125) 1 BASE Pin Configuration 1 = Base 2 = Emitter 3 = Collector 2 max. .004 (0.1) 3 .045 (1.15) .037 (0.95) COLLECTOR .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Rating Ratings at 25C ambient temperature unless otherwise specified. Symbol 2907 2907A Unit Collector - Emitter Voltage VCEO -40 -60 Vdc Collector - Base Voltage VCBO -60 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -600 mAdc Collector Current -- Continuous Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg - 55 to +150 C Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MDS030300B1 Page 1 General Purpose Transistor (PNP) COMCHIP www.comchiptech.com ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -40 -60 -- -- Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -10 mAdc, IB = 0) V(BR)CEO MMBT2907 MMBT2907A Vdc Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 -- Vdc Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 -- Vdc Collector Cutoff Current (VCE = -30 Vdc, VBE(off) = -0.5 Vdc) ICEX -- -50 Collector Cutoff Current (VCB = -50 Vdc, IE = 0) ICBO MMBT2907 MMBT2907A -- -- -0.020 -0.010 MMBT2907 MMBT2907A -- -- -20 -10 -- -50 MMBT2907 MMBT2907A 35 75 -- -- (IC = -1.0 mAdc, VCE = -10 Vdc) MMBT2907 MMBT2907A 50 100 -- -- (IC = -10 mAdc, VCE = -10 Vdc) MMBT2907 MMBT2907A 75 100 -- -- (IC = -150 mAdc, VCE = -10 Vdc) (3) MMBT2907 MMBT2907A -- 100 -- 300 (IC = -500 mAdc, VCE = -10 Vdc) (3) MMBT2907 MMBT2907A 30 50 -- -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 (VCB = -50 Vdc, IE = 0, TA = 125C) Base Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IB nAdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) hFE Collector - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base - Emitter Saturation Voltage (3) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) -- Vdc Vdc 1.FR-5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. MDS030300B1 Page 2 General Purpose Transistor (PNP) COMCHIP www.comchiptech.com SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (3),(4) (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) fT MHz 200 -- -- 8.0 -- 30 ton -- 45 td -- 10 Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 15 mAdc) mAdc Delay Time Rise Time Turn-Off Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 15 mAdc) mAdc Storage Time Fall Time v v tr -- 40 toff -- 100 ts -- 80 tf -- 30 ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0 ns 50 -16 V 200 ns Figure 1. Delay and Rise Time Test Circuit MDS030300B1 INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Page 3 General Purpose Transistor (PNP) COMCHIP www.comchiptech.com TYPICAL CHARACTERISTICS 3.0 VCE = -1.0 V VCE = -10 V hFE , Normalized Current Gain 2.0 TJ = 125C 25C 1.0 - 55C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 I C, Collector Current (mA) Figure 3. DC Current Gain VCE , Collector-Emitter Voltage (V) -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 I B, Base Current (mA) -3.0 -2.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C 30 20 td @ VBE(off) = 0 V tf 3.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, Collector Current Figure 5. Turn-On Time MDS030300B1 MDS030300 100 70 50 30 ts = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, Time (ns) t, Time (ns) 300 200 -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C, Collector Current (mA) -200 -300 -500 Figure 6. Turn-Off Time Page 4 General Purpose Transistor (PNP) COMCHIP www.comchiptech.com TYPICAL SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) f = 1.0 kHz IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k R s, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 50 k 400 Ceb 10 7.0 5.0 Ccb 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 f T, Current-Gain -- Bandwidth Product (MHz) C, Capacitance (pF) 4.0 f, Frequency (kHz) 20 -20 -30 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 Reverse Voltage (VOLTS) I C, Collector Current (mA) Figure 9. Capacitances Figure 10. Current-Gain -- Bandwidth Product +0.5 -1.0 TJ = 25C 0 VBE(sat) @ IC/IB = 10 RqVC for VCE(sat) Coefficient (mV/ C) -0.8 VBE(on) @ VCE = -10 V -0.6 V, Voltage (V) IC = -50 A -100 A -500 A -1.0 mA 2.0 30 2.0 -0.1 6.0 -0.4 -0.2 -0.5 -1.0 -1.5 RqVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 MDS030300B1 -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 I C, Collector Current (mA) I C, Collector Current (mA) Figure 11. "On" Voltage Figure 12. Temperature Coefficients Page 5