Page 1
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
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COMCHIP
General Purpose Transistor (PNP)
MMBT2907A
Ideal for Medium Power Amplification and Switching
COLLECTOR
3
1
BASE
2
EMITTER
Rating Symbol 2907 2907A Unit
Collector–Emitter Voltage VCEO –40 –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–600 mAdc
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 556 °C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
q
JA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
MDS030300B1
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COMCHIP
COMCHIP
General Purpose Transistor (PNP)
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0) MMBT2907
MMBT2907A
V(BR)CEO –40
–60 —
—
Vdc
Collector–Base Breakdown Voltage (IC = –10
m
Adc, IE = 0) V(BR)CBO –60 — Vdc
Emitter–Base Breakdown Voltage (IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutof f Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc) ICEX — –50 nAdc
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0) MMBT2907
MMBT2907A
(VCB = –50 Vdc, IE = 0, TA = 125°C) MMBT2907
MMBT2907A
ICBO —
—
—
—
–0.020
–0.010
–20
–10
µAdc
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IB— –50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc) MMBT2907
MMBT2907A
(IC = –1.0 mAdc, VCE = –10 Vdc) MMBT2907
MMBT2907A
(IC = –10 mAdc, VCE = –10 Vdc) MMBT2907
MMBT2907A
(IC = –150 mAdc, VCE = –10 Vdc) (3) MMBT2907
MMBT2907A
(IC = –500 mAdc, VCE = –10 Vdc) (3) MMBT2907
MMBT2907A
hFE 35
75
50
100
75
100
—
100
30
50
—
—
—
—
—
—
—
300
—
—
—
Collector–Emitter Saturation V oltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat) —
—–0.4
–1.6
Vdc
Base–Emitter Saturation V oltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
VBE(sat) —
—–1.3
–2.6
Vdc
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
1.FR-5 = 1.0 X 0.75 X 0.062 in.
MDS030300B1
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COMCHIP
GeneralPurposeTransistor (PNP)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (3),(4)
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 — MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF
SWITCHING CHARACTERISTICS
Turn–On Time ton — 45
Delay T ime (VCC = –30 Vdc, IC = –150 mAdc,
I = –15 mAdc td— 10 ns
Rise T ime
IB1 = 15 mAdc)
tr— 40
Turn–Of f Time toff — 100
Storage T ime (VCC = –6.0 Vdc, IC = –150 mAdc,
I = I = –15 mAdc ts— 80 ns
Fall T ime
IB1 =I
B2 = 15 mAdc)
tf— 30
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
00
–16 V
200 ns
50
1.0 k
200
–30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
+15 V –6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
–30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
INPUT
Zo = 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
Ω
PRF = 150 PPS
RISE TIME
≤
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
Page 3
MDS030300B1
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COMCHIP
GeneralPurposeTransistor (PNP)
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
3.0
0.2
–0.1
TJ = 125
°
C
25
°
C
–55
°
C
VCE = –1.0 V
VCE = –10 V
hFE, Normalized Current Gain
2.0
–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
Figure 4. Collector Saturation Region
IB, Base Current (mA)
–0.4
–0.6
–0.8
–1.0
–0.2
V , Collector–Emitter Voltage (V)
0
CE
IC = –1.0 mA
–0.005
–10 mA
–0.01
–100 mA –500 mA
–0.02 –0.03 –0.05 –0.07 –0.1 –0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50
Figure 5. Turn–On Time
IC, Collector Current
300
–5.0
Figure 6. Turn–Off Time
IC, Collector Current (mA)
–5.0
t, Time (ns)
t, Time (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = –30 V
IC/IB = 10
TJ = 25
°
C
500
300
100
70
50
30
20
10
7.0
5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300 –500
200 tf
t
′
s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
Page 4
MDS030300MDS030300B1
Page 5
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COMCHIP
General Purpose Transistor (PNP)
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, Frequency (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, Source Resistance (OHMS)
NF, Noise Figure (dB)
NF, Noise Figure (dB)
f = 1.0 kHz
IC = –50
µ
A
–100
µ
A
–500
µ
A
–1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
00.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
IC = –1.0 mA, Rs = 430
Ω
–500
µ
A, Rs = 560
Ω
–50
µ
A, Rs = 2.7 k
Ω
–100
µ
A, Rs = 1.6 k
Ω
Figure 9. Capacitances
Reverse Voltage (VOLTS)
30
Figure 10. Current–Gain — Bandwidth Product
IC, Collector Current (mA)
C, Capacitance (pF)
–0.1
2.0
Figure 11. “On” Voltage
IC, Collector Current (mA)
–1.0
Figure 12. Temperature Coefficients
IC, Collector Current (mA)
V, Voltage (V)
TJ = 25
°
CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
R
q
VC for VCE(sat)
fT, Current–Gain — Bandwidth Product (MHz)
Coefficient (mV/
°
C)
20
10
7.0
5.0
3.0
–0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30
400
300
200
100
80
60
40
30
20
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1000
–0.8
–0.6
–0.4
–0.2
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
+0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
Ceb
Ccb
VCE = –20 V
TJ = 25
°
C
R
q
VB for VBE
MDS030300B1
