SBR8100 - Daesan Electronics

SBR820 THRU SBR8100

CURRENT 8.0Amperes

VOLTAGE 20 to 100 Volts

Maximum Ratings and Electrical Characteristics

Notes:

(1) Pulse test: 300μS pulse width, 1% duty cycle

(2) Thermal resistance from junction to case

(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive

load. For capacitive load, derate by 20%)

Features

Mechanical Data

· Plastic Package has Underwriters Laboratory

Flammability Classification 94V-0

· Metal silicon junction, majority carrier conduction

· Guard ring for overvoltage protection

· Low power loss, high efficiency

· High current capability, Low forward voltage drop

· Single rectifier construction

· High surge capability

· For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

· High temperature soldering guaranteed :

250℃/10 seconds, 0.25" (6.35mm) from case

· Case : JEDEC TO-220A molded plastic body

· Terminals: Lead solderable per

MIL-STD-750, Method 2026

· Polarity: As marked

· Mounting Position: Any

· Weight: 0.08ounce, 2.24 grams

Symbols SBR

820 SBR

840 Units

Maximum repetitive peak reverse voltage VRRM 20 30 40 Volts

Maximum RMS voltage VRMS

0.65 0.75

Maximum DC blocking voltage VDC Volts

Maximum average forward rectified current

(see Fig. 1) I(AV) 8.0

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load

(JEDEC method)

150.0 Amps

Maximum instantaneous forward voltage

at 8.0A (Note 1) VF

1.0

Volts

TA=25℃

Maximum instantaneous reverse

current at rated DC blocking

voltage (Note1) TA=125℃

Typical thermal resistance (Note 2) ℃/W

Operating junction temperature range -65 to +125 ℃

IFSM

Volts

SBR

830

14 21 28

20 30 40

Repetitive peak forward current(square wavr,

20KHZ) at Tc=105℃

Storage temperature range TSTG

-65 to +150

-65 to +150 ℃

0.85

SBR

850 SBR

880

50 60 80

SBR

860

35 42 56

50 60 80

SBR

8100

100

RθJC 2.5

16.0 Amps

Amps

IFRM

0.80

Dimensions in inches and (millimeters)

TO-220A

.412

.248

.040

.158

.595

.550

.200

.051

.040

.108

(10.5)

(6.3)

(1.0)

(4.0)

(15.1)

(14.0)

(5.08)

(1.3)

(1.0)

(2.75)

MAX.

MIN.

MAX.

3.8 +.2

HOLE THRU

PIN 1

PIN 2 CASE

Case Positive

.180

.050

.120

(4.6)

(1.27)

(3.05)

PIN 1

PIN 2 CASE

Case Negative

Suffix "R"

RATINGS AND CHARACTERISTIC CURVES SBR820-SBR8100

FIG.1-FORWARD CURRENT DERATING CURVE

AVERAGE FORWARD CURRENT

AMPERES

LEAD TEMPERATURE (

℃)

0 15010050

SINGLE PHASE

HALF WAVE 50Hz

INDUCTIVE OR

RESISTIVE LOAD

6.0

8.0

4.0

2.0

──󰼿SBR820-SBR840

- - - SBR850-SBR8100

REVERSE VOLTAGE. VOLTS

CAPACITANCE(pF)

FIG.4-TYPICAL JUNCTION CAPACITANCE

100

4000

1000

200

2000

0.1 100101.0 40 600.4

PEAK FORWARD SURGE

CURRENT(AMPERES)

NUMBER OF CYCLES AT 60Hz

FIG.5-MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

125

145

140

135

130

150

1.0 100105.02.0 5020

FIG.2-TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

SBR820-SBR840

SBR850-SBR8100

=25℃

PLUS WIDTH=300

㎲

1% DUTY CYCLE

INSTANTANEOUS FORWARD CURRENT (AMPERES)

INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

1.0

0.1

2 9876543 10

FIG.3-TYPICAL REVERSE CHARACTERISTICS

PERCENT OF RATED PEAK REVERSE VOLTAGE(VOLTS)

INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)

0.001

1.0

0.1

0.01

TC=25℃

10080604020 140120

TC=150℃

TC=125℃

TC=75℃

──󰼿SBR820-SBR840

- - - SBR850-SBR8100

──󰼿SBR820-SBR840

- - - SBR850-SBR8100