TLP108
2015-10-19
1
TOSHIBA PHOTOCOUPLER GaAℓAs IRED & PHOTO-IC
TLP108
Isolated bus drivers
High speed line receivers
Microprocessor system interfaces
The Toshiba TLP108 consists of a GaAℓAs light emitting diode optically
coupled to a high-gain, high-speed photodetector. The TLP108 is housed
in a 6-pin MFS O P. With a totem-pole output, the TLP108 is capable of
both sinking and sourcing current. The TLP108 has an internal Faraday
shield, which provides a guaranteed common-mode transient immunity.
The TLP108 has an inverting output. A noninverting-output version, the
TLP105, is also available.
Inverter logic type (totem-pole output)
Guaranteed Performance Over temperature: −40 to 100°C
Power Supply Voltage: 4.5 to 20 V
Input Threshold Current: IFHL =1.6 mA (max)
Switching Time (tpLH/tpHL): 250 ns (max)
Common mode transient immunity: 10 kV/µs
Isolation Voltage: 3750 Vrms
UL approved : UL1577, File No.E67349
c-UL approved :CSA Component Acceptance Service
No. 5A, File No.E67349
Option (V4) VDE approved : DIN EN60747-5-5 (Note)
(Note) : When an EN60747-5-5 approved type is needed,
Please designate “Opti on( V 4)”
Truth Table
Input LED Tr1 Tr2 Output
H
ON
OFF
ON
L
L
OFF
ON
OFF
H
JEDEC
―
JEITA
―
TOSHIBA
11-4C2
Weight: 0.09 g (typ.)
Unit: mm
Pin Conf i guration ( t op View)
Schematic
1:ANODE
3:CATHODE
4:GND
5:VO(Output)
6:VCC
VCC
GND
SHIELD
1
3
4
5
6
VCC
VO
GND
ICC
IO
6
5
4
SHIELD
3－
1＋
IF
VF
Tr1
Tr2
0.1 µF bypass cap acitor must be
conne cted be t wee n pin 6 and 4.
Start of commercial production
2008-04
TLP108
2015-10-19
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Recommended Operating Conditions
CHARACTERISTIC
SYMBOL
MIN
T Y P.
MAX
UNIT
Input Current , ON
IF(ON)
2
―
10
mA
Input Voltage , OFF
VF(OFF)
0
―
0.8
V
Supply Voltage*
VCC
4.5
―
20
V
Operating Temperature T
opr
-40
―
100 °C
Fan-out (TTL Load)
N
―
―
4
―
* This item denotes operating range, not meaning of recommended operating conditions.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
LED
Forward Current
IF
20
mA
Forward Current Derating (Ta ≥ 83
°
C)
Δ
IF/
℃
-0.48
mA/
℃
Peak Transient Forward Current (Note
1)
IFPT
1
A
Input Power Dissipation
PD
40
mW
Reverse Voltage V
R
5 V
DETECTOR
Output Current 1 (Ta
≤
25
℃
)
IO1
25/-15
mA
Output Current 2 (Ta
≤
100
℃
)
IO2
5/-5
mA
Output Current Derating (Ta ≥ 25
°
C)
Δ
IO1/
℃
-0.26/-0.13
mA/
℃
Peak Output Current (Note 2) I
OP
50/-50 mA
Output Voltage
VO
-0.5 to 20
V
Output Power Dissipation
PO
75
mW
Supply Voltage
VCC
-0.5 to 20
V
Operating Temperature Range T
opr
−40 to 100 ℃
Storage Temperature Range
Tstg
−55 to 125
℃
Lead Solder Temperature (10
s)
Tsol
260
℃
Isolation Voltage
(AC, 60 s, R.H.
≤
60
%) (Note
3)
BVS 3750 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 1µs, 300pps.
Note 2: Pulse width ≤ 5µs, duty cycle ≤ 0.025
Note 3: Device considered a two terminal device: pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together.
TLP108
2015-10-19
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Electrical Characteristics
(Unless oth er wi se specified , Ta = -40 to 100
°
C, VCC = 4.5 to 20 V)
CHARACTERISTIC SYMBOL
TEST
CIRCUIT
CONDITION MIN T Y P. MAX UNIT
Input Forward Voltage V
F
― IF=10 mA, Ta=25°C 1.45 1.57 1.75 V
Temperature Coefficient
of Forward Voltage
ΔVF/ΔTa ― IF=10 mA ― −2.0 ― mV/°C
Input Reverse Current I
R
― VR=5 V, Ta=25°C ― ― 10 µA
Input Capacitance C
T
― V=0V, f=1 MHz, Ta=25°C ― 100 ― pF
Logic Low Output Voltage V
OL
1 I
OL
=3.5 mA , I
F
=5 mA ― 0.2 0.6 V
Logic High Output Voltage VOH 2
IOH=−2.6 mA,
VF=0.8 V
VCC=4.5 V 2.7 4.0 ―
V
VCC=20 V 17.4 19.0 ―
Logic Low Supply Current ICCL 3 IF=5 mA
V
CC
=20 V ― ― 3.0
mA
V
CC
=5.5 V ― ― 3.0
Logic High Supply Current ICCH 4 VF=0 V
V
CC
=20 V ― ― 3.0
mA
V
CC
=5.5 V ― ― 3.0
Logic Low Short Circuit
Output Current (Note 1) IOSL 5 IF=5 mA
VO=GND
V
CC
=VO=5.5 V 15 80 ―
mA
V
CC
=VO=20 V 20 90 ―
Logic High Short Circuit
Output Current (Note 1) IOSH 6 VF=0 V
V
CC
=5.5 V −5 −15 ―
mA
V
CC
=20 V −10 −20 ―
Input Current Logic Low
Output IFHL ― IO=3.5 mA, VO<0.4 V ― 0.4 1.6 mA
Input Voltage Logic High
Output
VFLH ― IO=−2.6 mA, VO>2.4 V 0.8 ― ― V
Input Current Hysteresis I
HYS
― VCC=5 V ― 0.05 ― mA
*All typical values are at Ta=25°C
Note 1: Duration of output short circuit time should not exceed 10 ms.
Isolation Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP.. MAX UNIT
Capacitance input to output C
S
VS = 0V,f = 1 MHz (Note 1)
― 0.8 ― pF
Isolation resistance R
S
R.H. ≤ 60%,VS = 500 V (Note 1)
1×1012 1014 ― Ω
Isolation voltage BVS
AC,60 s 3750 ― ―
Vrms
AC,1 s in oil ― 10000 ―
DC,60 s, in oil ― 10000 ― V
dc
Note 1: A ceramic capacitor (0.1µA) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain
linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length
between capacitor and coupler should not exceed 1 cm.
TLP108
2015-10-19
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Switching Characteristics
(Unless other wi se specified , Ta = -40 to 100
°
C, VCC = 4.5 to 20 V)
CHARACTERISTIC SYMBOL
TEST
CIRCUIT
CONDITION MIN T Y P. MAX UNIT
Propagation Delay Time
to Logic High output
tpLH
7, 8
IF=3→0mA 30 150 250 ns
Propagation Delay Time
to Logic Low output
tpHL IF=0→3mA 30 150 250 ns
Switching Time Dispersion
between ON and OFF
|tpHL-
t
pLH
| ― ― ― 220 ns
Rise Time (10 – 90 %)
tr
IF=3
→
0mA, VCC=5V
―
30
75
ns
Fall Time (90 – 10 %) t
f
I
F
=0→3mA, V
CC
=5V
―
30 75 ns
Common Mode transient
Immunity at High Level Output
CMH
9
VCM=1000Vp-p, IF=0mA,
VCC=20V,Ta=25
°
C
-10000 ― ― V/µs
Common Mode transient
Immunity at Low Level Output
CML VCM=1000Vp-p, IF=5mA,
VCC=20V,Ta=25
°
C
10000 ― ― V/µs
*All typical values are at Ta=25°C
Test Circuit 1 : VOL Test Circuit 2 : VOH
Test Circuit 3 : ICCL Test Circuit 4 : ICCH
Test Circuit 5 : IOSL Test Circuit 6 : IOSH
0.1µF
0.1µF
4
VCC
IF
→
↑
VCC
GND
SHIELD
0.1µF
VOL
1
3
6
5
4
V
IOL
↑
VCC
GND
SHIELD
VCC
1
3
6
5
4
ICCH
A
1
VCC
GND
SHIELD
3
↑
→
ICCL
VCC
6
5
4
IF
VCC
GND
SHIELD
VOH
VCC
1
3
6
5
V
IOH
↑
IF
↑
VCC
GND
SHIELD
0.1µF
VO
1
3
6
4
IOSL
A
VCC
VCC
VCC
GND
SHIELD
0.1µF
1
3
6
4
IOSH
A
VO
→
0.1µF
A
5
5
TLP108
2015-10-19
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Test Circuit 7: Switching Time Te s t Circuit
tr=tf=5 ns)
VCC
GND
SHIELD
VO
0.1µF
CL
VCC
IF
5 V
620 Ω
5 kΩ
CL is approximately 15 pF which includes
probe and stray wiring capacitance.
1
3
6
5
4
V
OH
V
OL
tpLH
tpHL
1.3V
50%
tf
tr
90%
10%
IF
VO
IF=3 mA ( P. G )
(f=50 kHz , duty=50%,
P.G.: Pulse generator
Test Circuit 8: Switching Time Te s t Circuit
VCC
GND
SHIELD
IF
VO
0.1µF
VCC
CL
VO
I
F
VOH
VOL
tpLH
tpHL
1.3V
50%
tf
tr
90%
10%
CL is approximately 15 pF which includes
probe and stray wiring capacitance.
IF=3 mA ( P. G )
(f=50 kHz , duty=50%,
tr=tf=5 ns)
P. G. : Pulse generator
1
3
6
5
4
Test Circuit 9: Common Mode Tra nsient Immunity Te st Circuit
0.1µF
VO
VCC
SW
IF
1
3
6
5
4
A
B
→
CML
CMH
VCM
10%
90%
1000 Ｖ
・
SW B : I
F
= 0 mA
・
SW A : I
F
= 5 mA
１V
17 V
VO
tr
tf
GND
SHIELD
VCC
VCM
)( )(800 s
tf
V
H
CM
µ
=
)( )(800 s
tr
V
L
CM
µ
=
TLP108
2015-10-19
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RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
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• PRODUCT IS NEI THE R INTENDE D NO R WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUI RE
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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABL E LAWS AND REGULATIONS.
