RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3931 is an unmatched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier. Package: Hermetic, 2-Pin, Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz Output Power: 50W Drain Efficiency = 65% -40C to 85C Operation Applications RF IN VGQ Pin 1 (CUT) RF OUT VDQ Pin 2 GND BASE Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure Civilian and Military Radar General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific, and Medical Functional Block Diagram Ordering Information RF3931S2 Sample bag with 2 pieces RF3931SB Bag with 5 pieces RF3931SQ Bag with 25 pieces RF3931SR Short Reel with 50 pieces RF3931TR13 13" Reel with 400 pieces RF3931PCBA-411 Fully assembled evaluation board optimized for 2.14GHz; 48V RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. (R) DS130905 (R) RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. (c)2013, RF Micro Devices, Inc. 1 of 14 RF3931 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 23 mA 65 V Operational Voltage Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 Operating Temperature Range (TL) -40 to +85 Operating Junction Temperature (TJ) C 200 Human Body Model Class 1A MTTF (TJ < 200C, 95% Confidence Limits)* 1.8E + 07 * 1.1E + 05 MTTF (TJ < 250C, 95% Confidence Limits) Thermal Resistance, RTH (junction to case) measured at TC = 85C, DC bias only 3.6 C Hours Caution! ESD sensitive device. RFMD Green: RoHS compliant per EU Directive 2011/65/EU, halogen free per IEC 61249-2-21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. C/W * MTTF - Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table below. Bias Conditions should also satisfy the following expression: P DISS < (TJ - TC) / RTH J - C and TC = TCASE Nominal Operating Parameters Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE Specification Parameter Unit Min Typ Condition Max Recommended Operating Conditions Drain Voltage (VDSQ) 28 Gate Voltage (VGSQ) -5 Drain Bias Current Frequency of Operation -3 48 V -2.5 V 130 DC mA 3500 MHz Capacitance CRSS 4 pF CISS 17 pF COSS 12 pF VG = -8V, VD = 0V DC Functional Test IG (OFF) - Gate Leakage 2 mA VG = -8V, VD = 0V ID (OFF) - Drain Leakage 2.5 mA VG = -8V, VD = 48V VG = 8V, ID = 6.6mA VGS (TH) - Threshold Voltage -4.2 V VDS (ON) - Drain Voltage at High Current 0.25 V VG = 0V, ID = 1.5A RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 14 RF3931 Specification Parameter Unit Min Typ RF Functional Test Test Conditions: CW operation, VDSQ = 48V, IDQ = 130mA, T = 25C, Performance in a standard tuned test fixture VGS (Q) -3.5 V Gain 10 12 dB Drain Efficiency 55 60 % Input Return Loss -12 -10 Output Power at P3dB Drain Efficiency at P3dB POUT = 45.8dBm, f = 2140MHz dB RF Typical Performance Small Signal Gain Condition Max Test Conditions: CW operation, VDSQ = 48V, IDQ = 130mA, T = 25C, Performance in a standard tuned test fixture 20 dB f = 900MHz 14 dB f = 2140MHz 47 dBm f = 900MHz 46.5 dBm f = 2140MHz 65 % f = 900MHz 65 % f = 2140MHz RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 14 RF3931 Typical Performance in standard 2.14GHz fixed tuned test fixture (CW, T = 25C, unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 14 RF3931 Typical Performance in standard 2.14GHz fixed tuned test fixture (CW, T = 25C, unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 14 RF3931 Typical Performance in standard 900MHz fixed tuned test fixture (CW, T=25C, unless noted) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 14 RF3931 Typical Performance in standard 900MHz fixed tuned test fixture (CW, T = 25C, unless noted) (continued) RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 14 RF3931 Package Drawing (Package Style: Flanged Ceramic) Pin Names and Descriptions Pin Name 1 GATE Gate - VG RF Input Description 2 DRAIN Drain - VD RF Output 3 SOURCE Source - Ground Base RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 14 RF3931 Bias Instruction for RF3931 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering up the evaluation board. 1. 2. Connect RF cables at RFIN and RFOUT. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. Apply -8V to VG. Apply 48V to VD. Increase VG until drain current reaches desired 130mA bias point. Turn on RF input. 3. 4. 5. 6. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 14 RF3931 2.14GHz Evaluation Board Schematic 2.14GHz Evaluation Board Bill of Materials (BOM) Value Manufacturer Manufacturer's P/N C1, C2, C10, C11 33pF ATC ATC800A330JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 2.2pF ATC ATC800A2R2BT C7 0.7pF ATC ATC800A0R7BT C8 1.0pF ATC ATC800A1R0BT Item C9 3.3pF ATC ATC800A3R3BT C12 100F Panasonic EEV-TG2A101M C15 10pF ATC ATC800A100JT R1 10 Panasonic ERJ-8GEYJ100V Not used - - RO4350, 0.030" thick dielectric Rogers - C16, C17, C18, C19 PCB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 14 RF3931 2.14GHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load () 2110 2.6 - j3.1 6.5 + j5.8 2140 2.5 - j2.8 6.7 + j6.6 2170 2.4 - j2.5 7.0 + j7.4 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 14 RF3931 900MHzcEvaluation Board Schematic 900MHz Evaluation Board Bill of Materials (BOM) Value Manufacturer Manufacturer's P/N C1, C2, C10, C11 68pF ATC ATC800B680JT C3,C14 0.1F Murata GRM32NR72A104KA01L C4,C13 4.7F Murata GRM55ER72A475KA01L C5 100F Panasonic ECE-V1HA101UP C6 12pF ATC ATC800B120 C7 5.6pF ATC ATC800B5R6 C8 6.8pF ATC ATC800B6R8 C9 2.0pF ATC ATC800B2R0 C12 330F Panasonic EEU-FC2A331 R1 10 Panasonic ERJ-8GEYJ100V Item RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 14 RF3931 900MHz Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load () 880 4.2 + j9.0 12.9 + j14.2 900 4.3 + j10.0 13.6 + j15.1 920 4.4 + j11.3 14.4 + j16.0 Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth. Loadpull contours available on RFMD website. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 13 of 14 RF3931 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (V GS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade-offs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS130905 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 14 of 14