RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 14
RF3931
30W GaN Wideband Power Amplifier
The RF3931 is a 48V 30W high power discrete amplifier designed for
commercial wireless infrastructure, cellular and WiMAX infrastructure,
industrial/scientific/medical, and general purpose broadband amplifier
applications. Using an advanced high power density Gallium Nitride
(GaN) semiconductor process, these high-performance amplifiers
achieve high efficiency and flat gain over a broad frequency range in a
single amplifier design. The RF3931 is an unmatched GaN transistor
packaged in a hermetic, flanged ceramic package. This package
provides excellent thermal stability through the use of advanced heat
sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of simple, optimized matching
networks external to the package that provide wideband gain and
power performance in a single amplifier.
Functional Block Diagram
Ordering Information
RF3931S2 Sample bag with 2 pieces
RF3931SB Bag with 5 pieces
RF3931SQ Bag with 25 pieces
RF3931SR Short Reel with 50 pieces
RF3931TR13 13” Reel with 400 pieces
RF3931PCBA-411 Fully assembled evaluation board optimized for
2.14GHz; 48V
Package: Hermetic, 2-Pin, Flanged
Ceramic
Features
■ Broadband Operation DC to
3.5GHz
■ Advanced GaN HEMT Technology
■ Advanced Heat-Sink Technology
■ Gain = 15dB at 2GHz
■ 48V Operation Typical
Performance at 900MHz
Output Power: 50W
Drain Efficiency = 65%
-40°C to 85°C Operation
Applications
■ Commercial Wireless
Infrastructure
■ Cellular and WiMAX
Infrastructure
■ Civilian and Military Radar
■ General Purpose Broadband
Amplifiers
■ Public Mobile Radios
■ Industrial, Scientific, and
Medical
RF3931
RF IN
VGQ
Pin 1 (CUT)
RF OUT
VDQ
Pin 2
GND
BASE
2 of 14
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
23
mA
Operational Voltage
65
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
Operating Junction Temperature (TJ)
200
°C
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
1.8E + 07
Hours
MTTF (TJ < 250°C, 95% Confidence Limits)*
1.1E + 05
Thermal Resistance, RTH (junction to case) measured at
TC = 85°C, DC bias only
3.6
°C/W
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Parameter
Specification
Unit
Condition
Min
Typ
Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
28
48
V
Gate Voltage (VGSQ)
-5
-3
-2.5
V
Drain Bias Current
130
mA
Frequency of Operation
DC
3500
MHz
Capacitance
CRSS
4
pF
VG = -8V, VD = 0V
CISS
17
pF
COSS
12
pF
DC Functional Test
IG (OFF) - Gate Leakage
2
mA
VG = -8V, VD = 0V
ID (OFF) - Drain Leakage
2.5
mA
VG = -8V, VD = 48V
VGS (TH) - Threshold Voltage
-4.2
V
VG = 8V, ID = 6.6mA
VDS (ON) - Drain Voltage at High
Current
0.25
V
VG = 0V, ID = 1.5A
* MTTF – Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT
(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table below.
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J - C and TC = TCASE
Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 14
Parameter
Specification
Unit
Condition
Min
Typ
Max
RF Functional Test
Test Conditions: CW operation, VDSQ = 48V, IDQ = 130mA,
T = 25°C, Performance in a standard tuned test fixture
VGS (Q)
-3.5
V
Gain
10
12
dB
POUT = 45.8dBm, f = 2140MHz
Drain Efficiency
55
60
%
Input Return Loss
-12
-10
dB
RF Typical Performance
Test Conditions: CW operation, VDSQ = 48V, IDQ = 130mA,
T = 25°C, Performance in a standard tuned test fixture
Small Signal Gain
20
dB
f = 900MHz
14
dB
f = 2140MHz
Output Power at P3dB
47
dBm
f = 900MHz
46.5
dBm
f = 2140MHz
Drain Efficiency at P3dB
65
%
f = 900MHz
65
%
f = 2140MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 14
Typical Performance in standard 2.14GHz fixed tuned test fixture
(CW, T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 14
Typical Performance in standard 2.14GHz fixed tuned test fixture
(CW, T = 25°C, unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 14
Typical Performance in standard 900MHz fixed tuned test fixture
(CW, T=25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 14
Typical Performance in standard 900MHz fixed tuned test fixture
(CW, T = 25°C, unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
8 of 14
Package Drawing (Package Style: Flanged Ceramic)
Pin Names and Descriptions
Pin
Name
Description
1
GATE
Gate - VG RF Input
2
DRAIN
Drain - VD RF Output
3
SOURCE
Source - Ground Base
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
9 of 14
Bias Instruction for RF3931 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 48V to VD.
5. Increase VG until drain current reaches desired 130mA bias point.
6. Turn on RF input.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
10 of 14
2.14GHz Evaluation Board Schematic
2.14GHz Evaluation Board Bill of Materials (BOM)
Item
Value
Manufacturer
Manufacturer’s P/N
C1, C2, C10, C11
33pF
ATC
ATC800A330JT
C3,C14
0.1µF
Murata
GRM32NR72A104KA01L
C4,C13
4.7µF
Murata
GRM55ER72A475KA01L
C5
100µF
Panasonic
ECE-V1HA101UP
C6
2.2pF
ATC
ATC800A2R2BT
C7
0.7pF
ATC
ATC800A0R7BT
C8
1.0pF
ATC
ATC800A1R0BT
C9
3.3pF
ATC
ATC800A3R3BT
C12
100µF
Panasonic
EEV-TG2A101M
C15
10pF
ATC
ATC800A100JT
R1
10Ω
Panasonic
ERJ-8GEYJ100V
C16, C17, C18, C19
Not used
-
-
PCB
RO4350, 0.030" thick dielectric
Rogers
-
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
11 of 14
2.14GHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source (Ω)
Z Load (Ω)
2110
2.6 - j3.1
6.5 + j5.8
2140
2.5 - j2.8
6.7 + j6.6
2170
2.4 - j2.5
7.0 + j7.4
Note: Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
12 of 14
900MHzcEvaluation Board Schematic
900MHz Evaluation Board Bill of Materials (BOM)
Item
Value
Manufacturer
Manufacturer’s P/N
C1, C2, C10, C11
68pF
ATC
ATC800B680JT
C3,C14
0.1µF
Murata
GRM32NR72A104KA01L
C4,C13
4.7µF
Murata
GRM55ER72A475KA01L
C5
100µF
Panasonic
ECE-V1HA101UP
C6
12pF
ATC
ATC800B120
C7
5.6pF
ATC
ATC800B5R6
C8
6.8pF
ATC
ATC800B6R8
C9
2.0pF
ATC
ATC800B2R0
C12
330µF
Panasonic
EEU-FC2A331
R1
10Ω
Panasonic
ERJ-8GEYJ100V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
13 of 14
900MHz Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source (Ω)
Z Load (Ω)
880
4.2 + j9.0
12.9 + j14.2
900
4.3 + j10.0
13.6 + j15.1
920
4.4 + j11.3
14.4 + j16.0
Note: Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
Loadpull contours available on RFMD website.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS130905
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
14 of 14
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These
capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the
value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal
voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts
applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is
removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance
values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the
source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum
limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ)
shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering
manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on
performance trade-offs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but
sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the
maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from
ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.