SAMSUNG ELECTRONICS INC BYE D MM 7964142 0012440 O4b MMSMNGK IRFZ24/Z25 N-CHANNEL IRFZ20/Z22 POWER MOSFETS FEATURES TO-220 * Lower Ros (on) Improved inductive ruggedness * Fast switching times * Rugged polysilicon gate cell structure Lower input capacitance * Extended safe operating area * Improved high temperature reliability IRFZ24/225 IRFZ20/Z22 PRODUCT SUMMARY Part Number Vos Ros(on) !p IRFZ20 50V 0.100 15A IRFZ22 50V 0.120 14A IRFZ24 60V 0.100 15A IRFZ25 60V 0.120, 144 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFZ20 | IRFZ22 IRFZ24 IRFZ25 Unit Drain-Source Voltage (1) Voss. 50 60 Vde Drain-Gate Voltage (Ras=1.0M2)}(1) VpoGrR 50 60 Vdc Gate-Source Voltage Ves +20 Vde Continuous Drain Current Tc=25C Ib 15 14 15 14 Adc Continuous Drain Current Tc=100C Ip 10 9 10 9 Adc Drain CurrentPulsed (3) lpm 60 56 60 56 Adc Gate CurrentPulsed lam +1.5 Adc Single Pulsed Avalanche Energy (4) Eas 9.5 mJ Avalanche Current las 15 A Total Power Dissipation at Tc=25C Pp 40 Watts Derate above 25C 0.32 W/G Operating and Storage _ Junction Temperature Range Ty, Tstg 55 to 175 Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5 seconds Th 300 Notes: (1) Ty=25C to 175C (2) Pulse test: Pulse width<300yps, Duty Cyclex2% (3} Repetitive rating: Pulse with limited by max. junction temperature (4) L=100pH, Vas=25V, Ra=250), Starting Ty=25C ELECTRONICSSAMSUNG ELECTRONICS INC IRFZ24/Z25 IRFZ20/Z22 BYE D MM 7964242 OO12441 TL2 MESMGK N-CHANNEL POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max [Units Test Conditions BVpss | Drain-Source IRFZ24/Z25| 60 | - V_ | Ves=OV, Ip=250uA Breakdown Voltage IRFZ20/Z22! 50 | - Vv Vesith) | Gate Threshold Voltage 2.0; 4.0 V_ | Vos=Vas, lp>=250pA Iess | Gate-Source Leakage Forward _ 100 | nA | Ves=20V Iass_| Gate-Source Leakage Reverse _ |-100] nA | Ves=-20V lpss_| Zero Gate Voltage Drain Current _ | 250 | wA | Vps=Max. Rating, Ves=OV _ }|1000 Vps=0.8Max. Rating, Ves=OV, Tc=150C ' On-State Drain- IRFZ20/Z24,; 15 | - A | Vps21.8V Plo) | Source Current (2) IRFZ22/Z25/ 14 | | | A | Ves=10V R Static Drain-Source IRFZ20/Z24; |0.08/0.10| 0 | Ve@s=10V, Ip=9.0A DStem) | On-State Resistance IRFZ22/Z225| | | 0.12 / Ofs Forward Transconductance (2) 5.6 | 6.1 _ U_ | Vos>RpsX pion), Ib>=9.0A Ciss_ | Input Capacitance |635) pF | Vegs=O0V Coss | Output Capacitance |/218| PF | Vos=25V Crss_ | Reverse Transfer Capacitance |105} pF | f=1.0MHz t Turn-On Delay Time _ _ 30 | ns oe Vpo=0.5 BVpss, In=9.0A Zo=500 t | Rise Time | = | 9 | 8 | (MOSFET switching times are essentially taon) | Turn-Off Delay Time _ _ 40 | ns | independent of operating temperature) tt Fall Time _ - 30 ns a Total Gate Charge _ _ 17 | nc 9 (Gate-Source Plus Gate-Drain) Ves=10V, Ipb=9.0A, Vps=0.8, Max. Rating Qgs_ | Gate-Source Charge _ ~ 17.5 /ne (Gate charge is essentially independent of operating temperature.) Qga { Gate-Drain (Miller) Charge - - 18 | nc THERMAL RESISTANCE Rttuc Junction-to-Case MAX 3.12 K/W Rincs | Case-to-Sink TYP 1.0 Kw | Mounting surtace flat, Smooth, and greased Rina Junction-to-Ambient MAX 80 K/W | Free Air Operation Notes: (1) Tj=25C to 175C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3} Repetitive rating: Pulse width limited by max. junction temperature am ELECTRONICS 406SAMSUNG ELECTRONICS INC BYE D WM 7964R42 OOL244e 959 MBSNGK N-CHANNEL POWER MOSFETS IRFZ24/Z25 IRFZ20/Z22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min) Typ | Max | Units Test Conditions Is Continuous Source Current | _ 15 A Modified MOSFET o (Body Diode) integral reverse ES Iso Putse-Source Current -|- 60 A P-N junction rectifier . 8 Vsp Diode Forward Voltage - 1.5 Vv Tc=25C, Is=15A, Ves=OV ter Reverse Recovery Time | | 310 | ns T,=25C, le =15A, die/dt=100A/uS Notes: (1} Ty=25C to 175C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature a wl c i oa = = b z Fd foi = ao z = 1 a s 5 1 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS} Typical Output Characteristics Pulse Test iov FF oy a ua w a = < & z w zc x > oO Zz < i a 4 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Ip, ORAIN CURRENT (AMPERES) lp, DRAIN CURRENT (AMPERES) Tj=175C 1 Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Transfer Characteristics 1 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Maximum Safe Operating Area a ELECTRONICS 407SAMSUNG ELECTRONICS INC BYE D MM 7564142 0012443 895 MSMGK IRFZ24/Z25 N-CHANNEL IRFZ20/Z22 POWER MOSFETS 9 NOTES ro SINGLE PULSE TRANSIENT 4 Duty Factor O= 1 2. Per Unil Base =Rauc 1 67 Deg. CW 3. Ta Te=Pow 2nuc (1 Pp, a ZmnscayAinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT} o 0.01 10 6 107 2 5 2 6 107 2 6 10 2 1 2 5 10 ti. SQUARE WAVE PULSE DURATION (SECONDS) | Maximum Effective Transient Thermal Impedance Junction-to-Case Vs. Pulse Duration T=178C a T=175C T=25 tpn, REVERSE DRAIN CURRENT (AMPERES) Ges, TRANSCOUNDUCTANCE (SIEMENS) 80us Pulse Test max 7 : Ip, DRAIN CURRENT (AMPERES) Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage Nu & & Roston), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) oe BVoss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE {NORMALIZED} 075 0 - -75 -50 -25 25 Ts, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resi Vs. Temp e@ 408 ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 79b4L4e OOLE444 72L MSNGK IRFZ24/Z25 N-CHANNEL IRFZ20/222 POWER MOSFETS 2000 Veg 0V = 1MHz Ceys=Cgs+Cgd, Cds Crss= Cod 1 _ Cgs Cod Coss= Cds + G5EECgd = Cds + Cod C, CAPACITANCE (pF) Vas, GATE-TO-SOUACE VOLTAGE (VOLTS) 1 6 1 20 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage IRFZ20/24 IRFZ22/25 Fins ion) DRAIN-TO-SOURCE ON RESISTANCE (OHMS} ip, DRAIN CURRENT (AMPERES) Q 30 60 90 120 1 180 Ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMP2.AATURE (C) Typicat On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature 40 \ 30 N \ 410 | \ ; || 50 100 150 200 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve ax ~ ELECTRONICS Pp, POWER DISSIPATION (WATTS)