CMOS linear image sensors
S10453 series
10 MHz readout, voltage output type
www.hamamatsu.com 1
The S10453 series is a voltage output type CMOS linear image sensor that operates at a video data rate of 10 MHz. This CMOS
linear image sensor has a pixel size of 25 × 500 m and is available in two types of 512 pixels (S10453-512Q) or 1024 pixels
(S10453-1024Q).
Image reading
Position detection
Features Applications
Video data rate: 10 MHz max.
Voltage output type
5 V single supply operation
Built-in timing generator allows operation with only
start and clock pulse inputs.
Simultaneous charge integration
Shutter function
Pixel size: 25 (H) × 500 (V) μm
Spectral response range: 200 to 1000 nm
Absolute maximum ratings
Parameter Symbol Condition Value Unit
Supply voltage Vdd Ta=25 °C -0.3 to +6 V
Clock pulse voltage V(CLK) Ta=25 °C -0.3 to +6 V
Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V
Operating temperature*1Topr -5 to +65 °C
Storage temperature*1Tstg -10 to +85 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
*1: No condensation
Structure
Parameter S10453-512Q S10453-1024Q Unit
Number of pixels 512 1024 -
Pixel pitch 25 m
Pixel height 500 m
Photosensitive area length 12.8 25.6 mm
Package Ceramic -
Window material Quartz -
CMOS linear image sensors S10453 series
2
Recommended terminal voltage
Parameter Symbol Min. Typ. Max. Unit
Supply voltage Vdd 4.75 5 5.25 V
Clock pulse voltage High V(CLK) Vdd - 0.25 Vdd Vdd + 0.25 V
Low 0 - 0.4 V
Start pulse voltage High V(ST) Vdd - 0.25 Vdd Vdd + 0.25 V
Low 0 - 0.4 V
Electrical characteristics
Parameter Symbol Min. Typ. Max. Unit
Clock pulse frequency f(CLK) 2 M - 10 M Hz
Video data rate VR - f(CLK) - MHz
Consumption current*2S10453-512Q I25 34 43 mA
S10453-1024Q 42 52 62
Conversion effi ciency CE 1.4 1.6 1.8 V/e-
*2: Ta=25 °C, Vdd=5 V, f(CLK)=10 MHz
Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz]
Parameter Symbol Min. Typ. Max. Unit
Spectral response range λ200 to 1000 nm
Peak sensitivity wavelength λp540 600 660 nm
Dark output voltage*3Vd - 3 30 mV
Saturation output voltage*4Vsat 2.8 3.2 - V
Noise Nr - 1.1 2.0 mV rms
Offset output voltage Vo 0.5 0.7 0.9 V
Photoresponse nonuniformity*5 *6PRNU - - ±10 %
*3: Integration time Ts=10 ms
*4: Difference from Vo
*5:
Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using pixels excluding pixels each at both
ends, and is defi ned as follows:
PRNU = ΔX/X × 100 [%]
X: average output of all pixels, ΔX: difference between X and maximum output or minimum output
*6: Excluding the start pixel and last pixel
Block diagram
KMPDB0273EA
KMPDC0256EC
Spectral response (typical example)
Wavelength (nm)
Relative sensitivity (%)
(Ta=25 °C)
200
100
80
60
40
20
0
400 600 800 1000 1200
ST CLK GND
Timing generator
Bias
generator
23 411
EOS
Video
Photodiode array
10
9
12 N-1N
Shift register
Hold circuit
Charge amp array
Vdd
821
5
CMOS linear image sensors S10453 series
3
Timing chart
CLK
Video
tvd1
tvd2
1234
13 14 15
CLK
Video
EOS
ST
12
Integration time
14 clocks
1n
tlp(ST)thp(ST)
tpi(ST)
CLK
ST
tf(CLK)
tf(ST)tr(ST)
tr(CLK)
tlp(ST)thp(ST)
tpi(ST)
1/f(CLK)
KMPDC0255ED
Parameter Symbol Min. Typ. Max. Unit
Start pulse interval tpi(ST) 23/f(CLK) - 1100 m s
Start pulse high period thp(ST) 8/f(CLK) - 1000 m s
Start pulse low period tlp(ST) 15/f(CLK) - 100 m s
Start pulse rise and fall times tr(ST), tf(ST) 0 20 30 ns
Clock pulse duty ratio - 45 50 55 %
Clock pulse rise and fall times tr(CLK), tf(CLK) 0 20 30 ns
Video delay time 1*7tvd1 5 13 18 ns
Video delay time 2*7tvd2 5 20 28 ns
*7: Ta=25 °C, f(CLK)=10 MHz
Note: The internal timing generator starts operation at the rising edge of CLK immediately after ST goes low. The rising edge of this
CLK is regarded as “1”.
The integration time equals the high period of ST.
When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the next shift
register operation will start.
The integration time can be changed by changing the ratio of the high and low periods of ST.
CMOS linear image sensors S10453 series
4
Operation example
thp(ST)=51.5 µs
tlp(ST)=1.5 µs
ST
tpi(ST)=53 µs
KMPDC0393EA
When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integra-
tion time is maximized (for outputting signals from all 512 channels)
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 530/f(CLK) = 530/10 MHz = 53 s
Start pulse high period = Start pulse cycle - Minimum start pulse low period
= 530/f(CLK) - 15/f(CLK) = 530/10 MHz - 15/10 MHz = 51.5 s
Integration time is equal to the start pulse high period, so it will be 51.5 s.
S10453-512Q
S10453-1024Q
thp(ST)=102.7 µs
tlp(ST)=1.5 µs
ST
tpi(ST)=104.2 µs
KMPDC0394EA
When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integra-
tion time is maximized (for outputting signals from all 1024 channels)
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 1042/f(CLK) = 1042/10 MHz = 104.2 s
Start pulse high period = Start pulse cycle - Minimum start pulse low period
= 1042/f(CLK) - 15/f(CLK) = 1042/10 MHz - 15/10 MHz = 102.7 s
Integration time is equal to the start pulse high period, so it will be 102.7 s.
CMOS linear image sensors S10453 series
5
Dimensional outline (unit: mm)
10.4 ± 0.25
4.8 ± 0.2
11
22
1
12
3.0 ± 0.3
10.16 ± 0.25
2.54 ± 0.13
0.51 ± 0.05
25.4 ± 0.13
31.75 ± 0.3
Photosensitive area
12.8 × 0.5
Photosensitive
surface
Direction of scan
Index mark
5.0 ± 0.5
0.5 ± 0.05
0.25
6.8 ± 0.3
(6.0)
Value in patenthesis indecates
reference value.
1.3 ± 0.2*1
1.4 ± 0.2*2
*1: Distance from upper surface of
window to photosensitive surface
*2: Distance from package bottom
to photosensitive surface
KMPDA0222EE
S10453-512Q
KMPDA0221EE
(12.3)
10.4 ± 0.25
4.8 ± 0.2
13.3 ± 0.3 11
22
1
12
3.0 ± 0.3
10.16 ± 0.25
1.3 ± 0.2*1
2.54 ± 0.13
0.51 ± 0.05
0.25
25.4 ± 0.13
40.6 ± 0.3
Photosensitive area
25.6 × 0.5
*1: Distance from upper surface of
window to photosensitive surface
*2: Distance from package bottom
to photosensitive surface
Direction of scan
1.4 ± 0.2*2
5.0 ± 0.5
0.5 ± 0.05
Photosensitive
surface
Index mark
Value in patenthesis indecates
reference value.
S10453-1024Q
CMOS linear image sensors S10453 series
6
Application circuit example
Pin no. Symbol I/O Function
1 NC No connection
2 ST I Start pulse
3 CLK I Clock pulse
4 GND Ground
5 Vdd I Supply voltage
6 NC No connection
7 NC No connection
8 Vdd I Supply voltage
9 Video O Video output
10 EOS O End of scan
11 GND Ground
12 NC No connection
13 NC No connection
14 NC No connection
15 NC No connection
16 NC No connection
17 MC No connection
18 NC No connection
19 NC No connection
20 NC No connection
21 Vdd I Supply voltage
22 NC No connection
Pin connections
+
-
Video
+5 V
+5 V
+5 V
+6 V
-6 V
0.1 µF
0.1 µF
22 pF
0.1 µF
0.1 µF
22 µF/25 V
S10453 series
22 µF
/25 V
0.1 µF
22 µF
/25 V
22 µF
/25 V
EOS
74HC541
22 µF
/25 V
ST
CLK
82 Ω
82 Ω
74HC541
100 Ω
51 Ω
LT1818
NC NC
GND NC
Vdd NC
NC NC
NC NC
Vdd NC
Video NC
EOS NC
GND NC
ST Vdd
CLK NC
+
+
+
+
+
KMPDC0414EA
Cat. No. KMPD1101E07 Jul. 2013 DN
CMOS linear image sensors S10453 series
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of July, 2013.
7
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electro-
static charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect
this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton
swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so
that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Solder-
ing should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Handle the device within the temperature range specifi ed in the absolute maximum ratings. Operating or storing the device at an
excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
(5) UV exposure
The device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the
device.
Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass.
Related information
Notice
Image sensors/Precautions
Precautions
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