2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC(max) 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB * Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram * ESCC qualified * Up to 100 krad(Si) low dose rate Description The 2N3700HR is a NPN transistor specifically designed for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MILPRF19500) and in the ESCC qualification system (ESCC 5000). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification Agency spec Package Radiation level EPPL - Yes 100 krad SW Yes 2N3700RUBx 100 krad ESCC Target SOC3700HRB - Yes 100 krad SW Yes 100 krad ESCC Target - - 100 krad SW - 100 krad ESCC - 2N3700UBxx 2N3700UBxxSW SOC3700xxSW UB ESCC 5201/004 LCC-3 SOC3700RHRx 2N3700HR 2N3700SW TO-18 2N3700RHRx J2N3700UB1 - JANSR2N3700UBG JANSR2N3700UBT JANS MIL-PRF-19500/391 UB 100 krad - 100 krad - JANS2N3700UBG - JANS2N3700UBT - June 2013 This is information on a product in full production. DocID15354 Rev 6 1/20 www.st.com Contents 2N3700HR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7 2/20 6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID15354 Rev 6 2N3700HR 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 1 A 0.5 W 0.5 W 0.76 W 1.8 W -65 to 200 C 200 C IC for 2N3700HR Total dissipation at Tamb 25 C for SOC3700HRB Ptot for SOC3700HRB Total dissipation at Tc 25 C Tstg Storage temperature TJ Max. operating junction temperature (1) for 2N3700HR 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 3. Thermal data Symbol Parameter LCC-3 and UB TO-18 Thermal resistance junction-case (max) for JAN - - Thermal resistance junction-case (max) for ESCC 350 97 Thermal resistance junction-solder pad (infinite sink) (max) for JAN 90 - Thermal resistance junction-solder pad (infinite sink) (max) for ESCC - - Thermal resistance junction-ambient (max) for JAN 325 - Thermal resistance junction-ambient (max) for ESCC 240(1) 350 Unit RthJC RthJSP(IS) C/W RthJA 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. DocID15354 Rev 6 3/20 20 Electrical characteristics 2 2N3700HR Electrical characteristics JANS and ESCC version of the products are assembled and tested in compliance with the agency specification it is qualified in. The electrical characteristics of each version are provided in dedicated tables. Tcase = 25 C unless otherwise specified. 2.1 JANS electrical characteristics Table 4. JANS electrical characteristics Symbol Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 140 V - 10 A ICES Collector cut-off current (IE = 0) VCE = 90 V VCE = 90 V, Tamb= 150C - 10 5 nA A IEBO Emitter cut-off current (IC = 0) VEB = 5 V VEB = 7 V - 10 10 nA A V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 30 mA - 80 V VCE(sat) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA - 0.2 0.5 V V VBE(sat) Base-emitter saturation voltage IC = 150 mA IB = 15 mA - 1.1 V IC = 0.1 mA VCE = 10 V 25 - 200 IC = 10 mA VCE = 10 V 45 - IC = 150 mA VCE = 10 V 100 - IC = 150 mA Tamb= 150C VCE = 10 V 40 - IC = 500 mA VCE = 10 V 50 - IC = 1 A VCE = 10 V 15 - 80 - 400 5 - 20 hFE hfe 4/20 Parameter DC current gain Small signal current gain VCE = 5 V f = 1 kHz VCE = 10 V f = 20 MHz 300 200 IC = 1 mA IC = 50 mA Cobo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz f 1 MHz - 12 pF Cibo Output capacitance (IE = 0) VEB = 0.5 V 100 kHz f 1 MHz - 60 pF DocID15354 Rev 6 2N3700HR Electrical characteristics Table 4. JANS electrical characteristics (continued) Symbol Parameter Test conditions Noise figure VCE = 10 V IC = 100 A Rg = 1 k, power bandwidth r'b,Cc(1) Collector-base time constant VCB =10 V; IC=10 mA; f=79.8 MHz toff + toff Switching times see circuit Figure 6 NF Min. Typ. Max. Unit - 4 dB 400 ps 30 ns - 1. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collectorbase terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf voltmeter across the emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies: r'b , Cc(ps) = 2 X Veb (mV). 2.2 ESCC electrical characteristics Table 5. ESCC 5201/004 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 90 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 100 A 140 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA 80 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 7 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) Post irradiation gain calculation (2) - [45] [50] [25] 0.2 0.5 V V 1 V [300] 1. Pulsed duration = 300 s, duty cycle 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DocID15354 Rev 6 5/20 20 Electrical characteristics 2.3 2N3700HR Electrical characteristics (curves) Figure 2. DC current gain (VCE=1 V) Figure 3. DC current gain (VCE=10 V) ( ( 9&( 9 9&( 9 & & & & & & ,F $ & & & ,F $ K)( 9 $0Y 6/20 ,F $ $0Y Figure 5. Base emitter saturation voltage K)( 9 $0Y Figure 4. Collector emitter saturation voltage DocID15354 Rev 6 & & & ,F $ $0Y 2N3700HR 2.4 Electrical characteristics Test circuits Figure 6. JANS non saturated switching-time test circuit +18 V NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: ZIN 100 k, CIN 12 pF, rise time 2.0 ns. Gipd040620131551FSR DocID15354 Rev 6 7/20 20 Electrical characteristics 2N3700HR Figure 7. ESCC resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 8/20 DocID15354 Rev 6 2N3700HR 3 Radiation hardness assurance Radiation hardness assurance The products guaranteed in radiation within the JANS system fully comply with the MILPRF-19500/255 specification. The products guaranteed in radiation within the ESCC system fully comply with the ESCC 5201/004 and ESCC 22900 specifications. JANS radiation assurance ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300 rad/s. A brief summary is provided below: * * All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MILSTD-750 for total Ionizing dose. Each wafer of each lot is tested. The table below provides for each monitored parameters of the test conditions and the acceptance criteria. Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit - 20 A 20 nA ICBO Collector cut-off current (IE = 0) VCB = 140 V ICES Collector-emitter cutoff current VCE = 90 V IEBO Emitter cut-off current (IC = 0) VEB = 5 V VEB = 7 V - 20 20 nA A V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 30 mA - 80 V VCE(sat) IC = 150 mA mA IC = 500 mA mA IB = 15 Collector-emitter saturation voltage IB = 50 0.23 0.58 V V Base-emitter saturation voltage IC = 150 mA mA IB = 15 1.1 V VBE(sat) IC = 150 mA IC = 0.1 mA [hFE] Post irradiation gain calculation VCE = 10 V [50](1) 300 (1) 200 VCE = 10 V [25] [45](1) IC = 10 mA VCE = 10 V IC = 500 mA VCE = 10 V [25](1) IC = 1.0 A VCE = 10 V [7.5](1) 200 1. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. DocID15354 Rev 6 9/20 20 Radiation hardness assurance 2N3700HR ESCC radiation assurance Each product lot is tested according to the ESCC basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable ESCC generic and/or detailed specification. ST goes beyond the ESCC specification by performing the following procedure: * * * * Test of 11 pieces by wafer, 5 biased at least 80% of V(BR)CEO, 5 unbiased and 1 kept for reference Irradiation at 0.1 rad (Si)/s Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in Table XX??? Delivery together with the parts of the radiation verification test (RVT) report of the particular wafer used to manufacture the products. This RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100C. Table 7. ESCC 5201/004 post radiation electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 90 V - 10 nA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 10 nA Collector-base breakdown voltage (IE = 0) IC = 100 A 140 - V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 30 mA 80 - V V(BR)EBO Emitter-base breakdown voltage (IC = 0) IE = 100 A 7 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 150 mA IC = 500 mA IB = 15 mA IB = 50 mA VBE(sat) (1) Base-emitter saturation voltage IC = 150 mA IB = 15 mA IC = 10 mA IC = 150 mA IC = 500 mA VCE = 10 V VCE = 10 V VCE = 10 V V(BR)CBO [hFE] (1) Post irradiation gain calculation (2) - [45] [50] [25] 0.2 0.5 V V 1 V [300] 1. Pulsed duration = 300 s, duty cycle 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. 10/20 DocID15354 Rev 6 2N3700HR Radiation hardness assurance Table 8. Radiation summary Radiation test 100 krad "SW" 100 krad ESCC Wafer tested each each Part tested 5 biased 5 biased + 5 unbiased Dose rate 0.1 rad/s 0.1 rad/s Acceptance Fixed values (1) MIL-STD-750 method 1019 Displacement damage Optional Optional Agency part number (ex) 5202/001/04 (2) 5202/001/04R (2) ST part number (ex) SOC3700SW SOC3700ARHRG Documents CoC +RVT CoC +RVT 1. Part numbers with suffix "SW" have same pre and post irradiation electrical. 2. Example of the 2N3700 in LCC-3 gold finish. DocID15354 Rev 6 11/20 20 Package mechanical data 4 2N3700HR Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 12/20 DocID15354 Rev 6 2N3700HR Package mechanical data Table 9. UB mechanical data mm. Dim. Min. Typ. Max. A 1.16 1.42 C 0.46 0.51 0.56 D 0.56 0.76 0.96 E 0.92 1.02 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.18 I 2.41 2.54 2.67 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.41 0.51 0.61 M 2.46 2.54 2.62 N 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56 Figure 8. UB drawings DocID15354 Rev 6 13/20 20 Package mechanical data 2N3700HR Table 10. LCC-3 mechanical data mm. Dim. Min. Typ. A 1.16 C 0.45 0.50 0.56 D 0.60 0.76 0.91 E 0.91 1.01 1.12 F 1.95 2.03 2.11 G 2.92 3.05 3.17 I 2.41 2.54 2.66 J 0.42 0.57 0.72 K 1.37 1.52 1.67 L 0.40 0.50 0.60 M 2.46 2.54 2.62 N 1.80 1.90 2.00 R 1.42 0.30 Figure 9. LCC-3 drawings 14/20 Max. DocID15354 Rev 6 2N3700HR Package mechanical data Table 11. TO-18 mechanical data mm. Dim. Min. A Typ. Max. 12.7 B 0.49 D 5.3 E 4.9 F 5.8 G 2.54 H 1.2 I 1.16 L 45 Figure 10. TO-18 drawings DocID15354 Rev 6 15/20 20 Order codes Order codes 16/20 5 Table 12. Order codes EPPL Quality level Radiation level Package Lead finish Marking(1) Packing 2N3700UB1 - - Engineering model ESCC - UB Gold U20 Waffle pack SOC3700 - - Engineering model ESCC - LCC-3 Gold N20 Waffle pack 2N3700RUBG 5201/004/06R Target ESCC flight 100 krad ESCC UB Gold 520100406R Waffle pack 2N3700RUBT 5201/004/07R Target ESCC flight 100 krad ESCC UB Solder Dip 520100407R Waffle pack 2N3700UB06SW (2) 5201/004/06 Y ESCC flight 100 krad SW UB Gold 520100406 Waffle pack 2N3700UB07SW (2) 5201/004/07 Y ESCC flight 100 krad SS UB Solder Dip 520100407 Waffle pack SOC3700RHRG 5201/004/04R Target ESCC flight 100 krad ESCC LCC-3 Gold 520100404R Waffle pack SOC3700RHRT 5201/004/05R Target ESCC flight 100 krad ESCC LCC-3 Solder Dip 520100405R Waffle pack SOC3700SW (3) 5201/004/04 or 05 (3) Y ESCC flight 100 krad SW LCC-3 Gold or solder dip (1) 520100404 or 05 (3) Waffle pack SOC3700HRB 5201/004/04 or 05 (3) Y ESCC flight - LCC-3 Gold or Solder Dip (1) 520100404 or 05 (3) Waffle pack 2N3700HR 5201/004/01 or 02 (3) - ESCC flight - TO-18 Gold or Solder Dip (1) 520100401 or 02 (3) Waffle pack - - Engineering model JANS UB Gold JN3700 Waffle pack MIL-PRF-19500/391 - JANSR UB Gold JSR3700 Waffle pack DocID15354 Rev 6 J2N3700UB1 JANSR2N3700UBG 100 krad 2N3700HR Agency specification CPN CPN Agency specification EPPL Quality level Radiation level Package Lead finish Marking(1) Packing JANSR2N3700UBT MIL-PRF-19500/391 - JANSR 100 krad UB Solder Dip JSR3700 Waffle pack JANS2N3700UBG MIL-PRF-19500/391 - JANS UB Gold JS3700 Waffle pack JANS2N3700UBT MIL-PRF-19500/391 - JANS UB Solder Dip JS3700 Waffle pack 2N3700HR Table 12. Order codes (continued) 1. Specific marking only. The full marking includes in addition: For the engineering models : ST logo, date code, country of origin (FR) For ESCC Flight parts : ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot For JANS Flight parts : ST logo, date code, country of origin (FR), Manufacturer code (CSTM), serial number of the part within the assembly lot 2. Not recommended for new design 3. Depending ESCC part number mentioned on the purchase order DocID15354 Rev 6 Order codes 17/20 Shipping details 2N3700HR 6 Shipping details 6.1 Date code Data code xyywwz is structured as described below: Table 13. Date code x EM (ESCC and JANS) 3 ESCC flight - JANS flight (diffused in Singapore) 6.2 yy ww z last two digits of the year week digits lot index in the week W Documentation Table 14. Documentation provided for each type of product Quality level Radiation level Engineering model - - JANS Flight - Certificate of conformance JANSR Flight 100 krad - ESCC Flight Documentation Certificate of conformance 50 rad/s radiation verification test report Certificate of conformance Certificate of conformance 100 krad 0.1 rad/s radiation verification test report 18/20 DocID15354 Rev 6 2N3700HR 7 Revision history Revision history Table 15. Document revision history Date Revision 10-Jan-2008 1 Initial release 07-Jan-2010 2 Modified Table 1 on page 1 26-Jul-2010 3 Modified Table 1 on page 1, added Table 10 on page 14 30-Nov-2011 4 - Modified: Table 6 on page 9 - Added: Section 2.3: Electrical characteristics (curves) - Minor text change in the document title on the coverpage 17-Apr-2013 5 Added: Section 3: Radiation hardness assurance 6 Updated order codes in Table 1: Device summary and Table 12: Order codes. Updated Section 3: Radiation hardness assurance. Minor text changes. 11-Jun-2013 Changes DocID15354 Rev 6 19/20 20 2N3700HR Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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