This is information on a product in full production.
June 2013 DocID15354 Rev 6 1/20
2N3700HR
Hi-Rel 80 V, 1 A NPN transistor
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Hermetic packages
•ESCC qualified
•Up to 100 krad(Si) low dose rate
Description
The 2N3700HR is a NPN transistor specifically
designed for aerospace and Hi-Rel applications. It
is available in the JAN qualification system (MIL-
PRF19500) and in the ESCC qualification system
(ESCC 5000). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
TO-18
LCC-3
3
1
2
UB
3
1
2
4
3
1
2
Pin 4 in UB is connected to the metallic lid
BVCEO 80 V
IC(max) 1 A
HFE at 10 V - 150 mA >100
Table 1. Device summary
Device Qualification Agency spec Package Radiation level EPPL
2N3700UBxx
ESCC 5201/004
UB
-Yes
2N3700UBxxSW 100 krad SW Yes
2N3700RUBx 100 krad ESCC Target
SOC3700HRB
LCC-3
-Yes
SOC3700xxSW 100 krad SW Yes
SOC3700RHRx 100 krad ESCC Target
2N3700HR
TO-18
--
2N3700SW 100 krad SW -
2N3700RHRx 100 krad ESCC -
J2N3700UB1
JANS MIL-PRF-19500/391 UB
-
JANSR2N3700UBG 100 krad -
JANSR2N3700UBT 100 krad -
JANS2N3700UBG -
JANS2N3700UBT -
www.st.com
Contents 2N3700HR
2/20 DocID15354 Rev 6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID15354 Rev 6 3/20
2N3700HR Electrical ratings
20
1 Electrical ratings
Table 2. Absolute maxi mum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 140 V
V
CEO
Collector-emitter voltage (I
B
= 0) 80 V
V
EBO
Emitter-base voltage (I
C
= 0) 7 V
I
C
Collector current 1 A
P
tot
Total dissipation at T
amb
≤ 25 °C
for 2N3700HR 0.5 W
for SOC3700HRB 0.5 W
for SOC3700HRB
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
0.76 W
Total dissipation at T
c
≤ 25 °C for 2N3700HR 1.8 W
T
stg
Storage temperature -65 to 200 °C
T
J
Max. operating junction temperature 200 °C
Table 3. Thermal data
Symbol Parameter LCC-3 and UB TO-18 Unit
R
thJC
Thermal resistance junction-case
(max) for JAN --
°C/W
Thermal resistance junction-case
(max) for ESCC 350 97
R
thJSP(IS)
Thermal resistance junction-solder
pad (infinite sink) (max) for JAN 90 -
Thermal resistance junction-solder
pad (infinite sink) (max) for ESCC - -
R
thJA
Thermal resistance junction-ambient
(max) for JAN 325 -
Thermal resistance junction-ambient
(max) for ESCC 240
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
350
Ele ctrical characteristics 2N3700HR
4/20 DocID15354 Rev 6
2 Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
T
case
= 25 °C unless otherwise specified.
2.1 JANS electrical characteristics
Table 4. JANS electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 140 V - 10 μA
I
CES
Collector cut-off
current (I
E
= 0)
V
CE
= 90 V
V
CE
= 90 V, T
amb
= 150
°C
-10
5
nA
μA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
V
EB
= 7 V -10
10
nA
μA
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA - 80 V
V
CE(sat)
Collector-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5
V
V
V
BE(sat)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA - 1.1 V
h
FE
DC current gain
I
C
= 0.1 mA V
CE
= 10 V 25 - 200
I
C
= 10 mA V
CE
= 10 V 45 -
I
C
= 150 mA V
CE
= 10 V 100 - 300
I
C
= 150 mA V
CE
= 10 V
T
amb
= 150
°C
40 -
I
C
= 500 mA V
CE
= 10 V 50 - 200
I
C
= 1 A V
CE
= 10 V 15 -
h
fe
Small signal current
gain
V
CE
= 5 V I
C
= 1 mA
f = 1 kHz 80 - 400
V
CE
= 10 V I
C
= 50 mA
f = 20 MHz 5-20
C
obo
Output capacitance
(I
E
= 0)
V
EB
= 0.5 V
100 kHz ≤ f ≤ 1 MHz -12pF
C
ibo
Output capacitance
(I
E
= 0)
V
EB
= 0.5 V
100 kHz ≤ f ≤ 1 MHz -60pF
DocID15354 Rev 6 5/20
2N3700H R Electri cal chara ct er istics
20
2.2 ESCC electrical characteristics
NF Noise figure V
CE
= 10 V I
C
= 100 μA
R
g
= 1 kΩ, power bandwidth -4dB
r'b,Cc
(1)
Collector-base time
constant
V
CB
=10 V; I
C
=10 mA;
f=79.8 MHz 400 ps
t
off
+ t
off
Switching times see circuit Figure 6 -30ns
1. This parameter may be determined by applying an rf signal voltage of 1.0 volt (rms) across the collector-
base terminals, and measuring the ac voltage drop (Veb ) with a high- impedance rf voltmeter across the
emitter-base terminals. With f = 79.8 MHz used for the 1.0 volt signal, the following computation applies:
r'b , Cc(ps) = 2 X Veb (mV).
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
Table 5. ESCC 5201/004 post radiation electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 90 V - 10 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V - 10 nA
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 100 μA 140 - V
V
(BR)CEO(1)
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA 80 - V
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 100 μA7-V
V
CE(sat) (1)
Collector-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5
V
V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 1 V
[h
FE
]
(1)
Post irradiation gain
calculation
(2)
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
[45]
[50]
[25]
-[300]
Ele ctrical characteristics 2N3700HR
6/20 DocID15354 Rev 6
2.3 Electrical characteristics (curves)
Figure 2. DC current gain (V
CE
=1 V) Figure 3. DC current gain (V
CE
=10 V)
Figure 4. Collector emitter saturation
voltage Figure 5. Base emitter saturation voltage
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Ć&
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Ć&
9&( Ć9
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Ć&
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DocID15354 Rev 6 7/20
2N3700H R Electri cal chara ct er istics
20
2.4 Test circuits
Figure 6. JANS non saturated switching-time test circuit
1.
NOTES:
2.
The rise time (t
r
) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the
generator source impedance shall be 50 ohms.
Sampling oscilloscope: Z
IN
≥ 100 kΩ, C
IN
≤ 12 pF, rise time ≤ 2.0 ns.
+18 V
Gipd040620131551FSR
Ele ctrical characteristics 2N3700HR
8/20 DocID15354 Rev 6
Figure 7. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
DocID15354 Rev 6 9/20
2N3700HR Radiation hardness assurance
20
3 Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5201/004 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. A brief summary is provided below:
•All test are performed in accordance to MIL-PRF-19500 and test method 1019 of MIL-
STD-750 for total Ionizing dose.
•Each wafer of each lot is tested. The table below provides for each monitored
parameters of the test conditions and the acceptance criteria.
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 140 V - 20 μA
I
CES
Collector-emitter cut-
off current V
CE
= 90 V 20 nA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
V
EB
= 7 V -20
20
nA
μA
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA - 80 V
V
CE(sat)
Collector-emitter
saturation voltage
I
C
= 150 mA I
B
= 15
mA
I
C
= 500 mA I
B
= 50
mA
-0.23
0.58
V
V
V
BE(sat)
Base-emitter
saturation voltage
I
C
= 150 mA I
B
= 15
mA 1.1 V
[h
FE
]
Post irradiation gain
calculation
I
C
= 150 mA V
CE
= 10 V [50]
(1)
1. See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the
pre- and post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The
[h
FE
] value can never exceed the pre-radiation minimum h
FE
that it is based upon.
300
I
C
= 0.1 mA V
CE
= 10 V [25]
(1)
200
I
C
= 10 mA V
CE
= 10 V [45]
(1)
I
C
= 500 mA V
CE
= 10 V [25]
(1)
200
I
C
= 1.0 A V
CE
= 10 V [7.5]
(1)
Radiation hardness assurance 2N3700HR
10/20 DocID15354 Rev 6
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
•Test of 11 pieces by wafer, 5 biased at least 80% of V
(BR)CEO
, 5 unbiased and 1 kept
for reference
•Irradiation at 0.1 rad (Si)/s
•Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples
comply with the post radiation electrical characteristics provided in Table XX???
•Delivery together with the parts of the radiation verification test (RVT) report of the
particular wafer used to manufacture the products. This RVT includes the value of each
parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at room
temperature and after an additional 168 hour annealing at 100°C.
Table 7. ESCC 5201/004 post radiation electrical characteristics
Symbol Parameter Test cond ition s Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 90 V - 10 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 5 V - 10 nA
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 100 μA 140 - V
V
(BR)CEO(1)
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA 80 - V
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 100 μA7-V
V
CE(sat) (1)
Collector-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.2
0.5
V
V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 1 V
[h
FE
]
(1)
Post irradiation gain
calculation
(2)
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
[45]
[50]
[25]
-[300]
DocID15354 Rev 6 11/20
2N3700HR Radiation hardness assurance
20
Table 8. Radiation summary
Radiation test 100 krad “SW” 100 krad ESCC
Wafer tested each each
Part tested 5 biased 5 biased + 5 unbiased
Dose rate 0.1 rad/s 0.1 rad/s
Acceptance Fixed values
(1)
1. Part numbers with suffix "SW" have same pre and post irradiation electrical.
MIL-STD-750 method 1019
Displacement damage Optional Optional
Agency part number (ex) 5202/001/04
(2)
2. Example of the 2N3700 in LCC-3 gold finish.
5202/001/04R
(2)
ST part number (ex) SOC3700SW SOC3700ARHRG
Documents CoC +RVT CoC +RVT
Package mechanical data 2N3700HR
12/20 DocID15354 Rev 6
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID15354 Rev 6 13/20
2N3700HR Package mechanical data
20
Figure 8. UB drawings
Table 9. UB mechanical data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.46 0.51 0.56
D 0.56 0.76 0.96
E 0.92 1.02 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.18
I 2.41 2.54 2.67
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.41 0.51 0.61
M 2.46 2.54 2.62
N 1.81 1.91 2.01
r 0.20
r1 0.30
r2 0.56
Package mechanical data 2N3700HR
14/20 DocID15354 Rev 6
Figure 9. LCC-3 drawings
Table 10. LCC-3 mechanical data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.45 0.50 0.56
D 0.60 0.76 0.91
E 0.91 1.01 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.17
I 2.41 2.54 2.66
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.40 0.50 0.60
M 2.46 2.54 2.62
N 1.80 1.90 2.00
R 0.30
DocID15354 Rev 6 15/20
2N3700HR Package mechanical data
20
Figure 10. TO-18 drawings
Table 11. TO-18 mechanic al data
Dim. mm.
Min. Typ. Max.
A 12.7
B 0.49
D 5.3
E 4.9
F 5.8
G 2.54
H1.2
I1.16
L 45°
Order codes 2N3700HR
16/20 DocID15354 Rev 6
5 Order codes
Table 12. Order codes
CPN Agency
specification EPPL Quality level Radiation
level Package Lead finish Marking
(1)
Packing
2N3700UB1 - - Engineering model
ESCC - UB Gold U20
Waffle pack
SOC3700 - - Engineering model
ESCC - LCC-3 Gold N20
Waffle pack
2N3700RUBG 5201/004/06R Target ESCC flight 100 krad
ESCC UB Gold 520100406R
Waffle pack
2N3700RUBT 5201/004/07R Target ESCC flight 100 krad
ESCC UB Solder Dip 520100407R
Waffle pack
2N3700UB06SW
(2)
5201/004/06 Y ESCC flight 100 krad
SW UB Gold 520100406
Waffle pack
2N3700UB07SW
(2)
5201/004/07 Y ESCC flight 100 krad
SS UB Solder Dip 520100407
Waffle pack
SOC3700RHRG 5201/004/04R Target ESCC flight 100 krad
ESCC LCC-3 Gold 520100404R
Waffle pack
SOC3700RHRT 5201/004/05R Target ESCC flight 100 krad
ESCC LCC-3 Solder Dip 520100405R
Waffle pack
SOC3700SW (3) 5201/004/04 or 05
(3)
Y ESCC flight 100 krad
SW LCC-3 Gold or solder
dip
(1)
520100404 or 05
(3)
Waffle pack
SOC3700HRB 5201/004/04 or 05
(3)
Y ESCC flight - LCC-3 Gold or Solder
Dip
(1)
520100404 or 05
(3)
Waffle pack
2N3700HR 5201/004/01 or 02
(3)
- ESCC flight - TO-18 Gold or Solder
Dip
(1)
520100401 or 02
(3)
Waffle pack
J2N3700UB1 - - Engineering model
JANS UB Gold JN3700
Waffle pack
JANSR2N3700UBG MIL-PRF-19500/391 - JANSR 100 krad UB Gold JSR3700
Waffle pack
2N3700HR Order codes
DocID15354 Rev 6 17/20
JANSR2N3700UBT MIL-PRF-19500/391 - JANSR 100 krad UB Solder Dip JSR3700
Waffle pack
JANS2N3700UBG MIL-PRF-19500/391 - JANS UB Gold JS3700
Waffle pack
JANS2N3700UBT MIL-PRF-19500/391 - JANS UB Solder Dip JS3700
Waffle pack
1. Specific marking only. The full marking includes in addition:
For the engineering models : ST logo, date code, country of origin (FR)
For ESCC Flight parts : ST logo, date code, country of origin (FR), ESA logo, serial number of the part within the assembly lot
For JANS Flight parts : ST logo, date code, country of origin (FR), Manufacturer code (CSTM), serial number of the part within the assembly lot
2. Not recommended for new design
3. Depending ESCC part number mentioned on the purchase order
Table 12. Order codes (continued)
CPN Agency
specification EPPL Quality level Radiation
level Package Lead finish Marking
(1)
Packing
Shipping details 2N3700HR
18/20 DocID15354 Rev 6
6 Shipping details
6.1 Date code
Data code xyywwz is structured as described below:
6.2 Documentation
Table 13. Date code
xyywwz
E M
(ESCC and JANS) 3
last two digits of
the year week digits lot index in the
week
ESCC flight -
JANS flight
(diffused in
Singapore)
W
Table 14. Documentation provided for each type of product
Quality level Radiation level Documentation
Engineering model - -
JANS Flight - Certificate of conformance
JANSR Flight 100 krad Certificate of conformance 50 rad/s radiation
verification test report
ESCC Flight
- Certificate of conformance
100 krad Certificate of conformance
0.1 rad/s radiation verification test report
DocID15354 Rev 6 19/20
2N3700HR Revision history
20
7 Revision history
Table 15. Document revision history
Date Revision Changes
10-Jan-2008 1 Initial release
07-Jan-2010 2 Modified Table 1 on page 1
26-Jul-2010 3 Modified Table 1 on page 1, added Table 10 on page 14
30-Nov-2011 4
– Modified: Table 6 on page 9
– Added: Section 2.3: Electrical characteristics (curves)
– Minor text change in the document title on the coverpage
17-Apr-2013 5 Added: Section 3: Radiation hardness assurance
11-Jun-2013 6
Updated order codes in Table 1: Device summary and Table 12:
Order co des.
Updated Section 3: Radiation hardness assurance.
Minor text changes.
2N3700HR
20/20 DocID15354 Rev 6
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