SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR (NPN) 1.BASE 2.EMITTER 3.COLLECTOR S eo es Z Power dissipation Pem: 0.3W (Tamb=25C ) tor current lcm: 0.6A ctor-bas voltage Viarycpo: 75V Operating and storage junction temperature range Ty, Tstg: -55C to+ 150C UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) Coilector-base breakdown voltage V(BR)CBO ic=10nA, le=0 75 Vv Collector-emitter breakdown voltage V(BR)CEG ic=10mA, tB=0 40 Vv Emitter-base breakdown voltage V(BR)EBO le=10 A, Ia=0 6 v Collector cut-off current IcBo Vcp=70V,le=0 0.1 BA Collector cut-off current : ICEO Vce=35V,la=0 0.1 uA Emitter cut-off current leBo VeB=3V, Ic=OmA 0.1 nA oC current gen ee Collector-emitter saturation voltage VCEsat ic=500mA,18=50mA 4 V Base-emitter saturation voltage VBEsat ic=500mA,|B=50mA 2 Vv Transition frequency fr Vce=20V,Ic=20mA,f=100MHz | 300 MHz DEVICE MARKING : MMBT2222ALT1=1P 188 189 Typical Characteristics MMBT2222ALT1 VcE=1.0V ee ee ee VEX 10V here DCCURRENT GAIN 0.1 02 03 O05 0.7 1.0 20 30 5.0 7.0 10 20 30 50 70 100 100 300 500 700 1.0K Ic COLLECTOR COURRENT(mA) DC Current Gain Vee(sat)@Ic/iB=10 200 VBE(on)@Ic/la=10V 100 V, VOLTAGE (VOITS) 70 Vce(sat)@ic/la=10 50 10 20 30 507.0 10 20 30 50 70 100 Ic COLLECTOR COURRENT(mA) O4 02 05 1020 50 10 20 50 100 200 5001.0K ic COLLECTOR COURRENT(mA) f 1, CURRENT-GAINBANDWIDTH PRODUCT(MHz) "On" Volaqes Current-Gain Bandwidth Product