Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2011 1
FJ330301
Silicon P-channel MOS FET
For switching circuits
Overview
FJ330301 is P-channel small signal MOS FET employed small size surface
mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V)
High-speed switching
Small size surface mounting package: SSSMini3-F2-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Drain-source surrender voltage VDSS -30 V
Gate-source surrender voltage VGSS ±12 V
Drain current ID-100 mA
Peak drain current IDP -200 mA
Power dissipation PD100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Package
Code
SSSMini3-F2-B
Pin Name
1: Gate
2: Source
3: Drain
Marking Symbol: U1
Internal Connection
1
(G) 2
(S)
(D)
3
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
2
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = -1 mA, VGS = 0 -30 V
Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 mA
Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA
Gate threshold voltage VTH ID = -1.0 mA, VDS = -3.0 V - 0.5 - 1.0 -1.5 V
Drain-source ON resistance RDS(on)
ID = -10 mA, VGS = -2.5 V 7 17 W
ID = -10 mA, VGS = -4.0 V 4 7 W
Forward transfer admittance YfsID = -10 mA, VDS = -3 V 20 40 mS
Short-circuit input capacitance (Common source)
Ciss
VDS = -3 V, VGS = 0, f = 1 MHz
12 pF
Short-circuit output capacitance (Common source)
Coss 7 pF
Reverse transfer capacitance (Common source)
Crss 3 pF
Turn-on time *ton
VDD = -3 V, VGS = 0 V to -3 V,
ID = -10 mA 100 ns
Turn-off time *toff
VDD = -3 V, VGS = -3 V to 0 V,
ID = -10 mA 100 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VDD = −3 V
ID = −10 mA
RL = 300 Ω
VOUT
VIN
D
G
S
50 Ω
td(on) td(off)
VIN
VOUT
10%
90%
90%
10%
trtf
VGS = 0 V to −3 V
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
3
ID VDS ID VGS RDS(on) VGS
0− 0.5− 0.4− 0.3− 0.2− 0.1
−100
−20
−40
−60
−80
0
FJ330301_ ID-VDS
Drain-source voltage VDS (V)
Drain current ID (mA)
−2.5 V
VGS = −4.5 V
−1.5 V
Ta = 25°C
0−2.0−1.5−1.0− 0.5
−10−3
−10−2
−1
−10
−10−1
−102
FJ330301_ ID-VGS
Gate-source voltage VGS (V)
Drain current ID (mA)
Ta = 85°C
−30°C
25°C
VDS = −3 V
0−10−2−4−6−8
1
10
102
103
FJ330301_ RDS(on)-VGS
Gate-source voltage VGS (V)
Drain-source ON resistance RDS(on) (Ω)
Ta = 25°C
ID = 0.01 A
FJ330301_ RDS(on)-ID
Drain current ID (mA)
Drain-source ON resistance RDS(on) (Ω)
−1−10 −102
10−1
1
10
102
−10−1
VGS = −2.5 V
−4.0 V
Ta = 25°C
Area of safe operation for the FJ330301
Drain current ID (mA)
Drain-source voltage VDS (V)
−1
−10
−103
−102
−10−2−10−1−10−1−102
100 ms
1 s
DC
Limited by
RDS(on) = 7 Ω (max)
(VGS = −4.0 V)
10 ms
Ta = 25°C
Glass epoxy board
(25.4 mm× 25.4 mm × t0.8 mm) coated with
copper foil, which has more than 300 mm2.
IDP = − 0.2 A
0−10−5−15 −20
0
5
10
15
20
25
FJ330301_
C
iss
, C
rss
, C
oss
-VDS
Drain-source voltage
V
DS
(V)
Short-circuit input capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
Ciss
Crss
Coss
Ta = 25°C
FJ330301_|Yfs|-ID
Forward transfer admittance |Yfs | (S)
Drain current ID (mA)
10−3
10−2
10−1
1
−10−1−1−10 −102
Ta = 25°C
VDS = −3 V
Ciss , Crss , Coss VDS Yfs ID
040 12080 160
0
40
20
80
60
120
100
FJ330301_ PD-Ta
Power dissipation PD (mW)
Ambient temperature Ta (°C)
RDS(on) ID PD Ta Safe operation area
Ver. CED
This product complies with the RoHS Directive (EU 2002/95/EC).
FJ330301
4
SSSMini3-F2-B Unit: mm
0.30 +0.05
−0.02
0.20 +0.05
−0.02 0.13 +0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.52 ±0.03
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
12
(0.27)
0 to 0.05
(5°)
(5°)
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semiconductors described in this book
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