Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 * Halogen-free According to IEC 61249-2-21 Available * TrenchFET(R) Power MOSFET * High-Efficient PWM Optimized * 100 % UIS and Rg Tested SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 25 Continuous Drain Current (TJ = 150 C)a, b TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a, b Single-Pulse Avalanche Energy Maximum Power Dissipationa, b 9 IS L = 0.1 mH TA = 25 C TA = 70 C A 2.3 15 EAS 11.25 mJ 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range 5.0 40 IAS PD V 6.5 7.0 IDM Pulsed Drain Current (10 s Pulse Width) Avalanche Current ID Unit - 55 to 150 W C THERMAL RESISTANCE RATINGS Limits Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typ. Max. 40 50 70 95 24 30 Unit C/W Notes: a. Surface Mounted on FR4 board. b. t 10 s. Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 1 Si4800BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.8 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 A 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 C 5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage a RDS(on) VDS 5 V, VGS = 10 V 30 A A VGS = 10 V, ID = 9 A 0.0155 0.0185 VGS = 4.5 V, ID = 7 A 0.023 0.030 gfs VDS = 15 V, ID = 9 A 16 VSD IS = 2.3 A, VGS = 0 V 0.75 1.2 8.7 13 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 5.0 V, ID = 9 A 3.5 0.5 td(on) tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.5 VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 IF = 2.3 A, dI/dt = 100 A/s 1.4 2.2 7 15 12 20 32 50 14 25 30 60 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 40 VGS = 10 thru 5 V 35 4V TC = - 55 C 35 25 C 30 I D - Drain Current (A) I D - Drain Current (A) 30 25 20 3V 15 10 25 125 C 20 15 10 5 5 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 1200 0.040 C - Capacitance (pF) R DS(on) - On-Resistance () 1000 0.032 VGS = 4.5 V 0.024 VGS = 10 V 0.016 Ciss 800 600 400 Coss 0.008 200 Crss 0 0.000 0 5 10 15 20 25 0 30 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.8 6 VDS = 15 V ID = 9 A 5 1.6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 12 4 3 2 VGS = 10 V ID = 9 A 1.4 1.2 1.0 0.8 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72124 S-83039-Rev. H, 29-Dec-08 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.06 50 r DS(on) - On-Resistance () I S - Source Current (A) 0.05 TJ = 150 C 10 0.04 ID = 9 A 0.03 0.02 0.01 TJ = 25 C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 150 0.2 0.0 Power (W) V GS(th) Variance (V) 120 ID = 250 A - 0.2 90 60 - 0.4 30 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 TJ - Temperature (C) 10-1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 0.1 100 ms 1s 10 s TC = 25 C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 72124 S-83039-Rev. H, 29-Dec-08 Si4800BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72124. Document Number: 72124 S-83039-Rev. H, 29-Dec-08 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000