4-9
Product Description
Ordering In formation
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
Pin 1
Indicator
RF OUT Ground
RF IN
Ground
1
9
6 5
7
84
32
NBB-302
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Des igns (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NBB-302 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and micro wa ve amplifi cat ion ne eds . This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-302 provides flexibility and stability. The
NBB-302 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either packaged or chip ( NBB-3 00-D) form, where its gold
metallization is ideal for hybrid circuit designs.
• Reliable, Low-Cost HBT Design
• 12.0dB Gain, +13.7dBm P1dB@2GHz
• High P1dB of +14.0dBm@6.0GHz and
+11.0dBm@14.0GHz
• Single Power Supply Operation
•50Ω I/O Matched for High Freq. Use
NBB-302 Cascadable Broadband GaAs MMIC Am plifier DC to
12GHz
NBB-302-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-302-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
0
Rev A2 030210
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
N3
2.39 min
2.59 max
Lid ID
1.70 min
1.91 max
2.94 min
3.28 max
Pin 1
Indicator
1.00 min
1.50 max
0.025 min
0.125 max
0.38 nom
Pin 1
Indicator
RF OUT
0.98 min
1.02 max
Ground
0.50 nom
0.50 nom
All Dimensions in Millimeters 0.37 min
0.63 max
RF IN
Ground
Package Style: MPGA, Bowtie, 3x3, Ceramic
!
4-10
NBB-302
Rev A2 030210
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
De vice Current 70 mA
Channel Temperature 200 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.9V, ICC=50mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21 12.0 13.5 dB f=0.1GHz to 1.0GHz
11.0 13.0 dB f=1.0GHz to 4.0GHz
12.5 dB f=4.0GHz to 6.0GHz
9.0 10.5 dB f=6.0GHz to 12.0GHz
9.5 (avg.) dB f=12.0GHz to 14.0GHz
Gain Flatness, GF ±0.6 dB f=0.1GHz to 8.0GHz
Input and Output VSWR 2.4:1 f=0.1GHz to 4.0GHz
2.0:1 f=4.0GHz to 12.0GHz
2.8:1 f=12 .0GHz to 15.0GHz
Bandwidth, BW 12.5 GHz BW3 (3dB)
Output Power @
-1dB Compression, P1dB 13.7 dBm f=2.0GHz
14.8 dBm f=6.0GHz
11.0 dBm f=14.0GHz
Noise Figure, NF 5.5 dB f=3.0GHz
Third Order Intercept, IP3 +23.5 dBm f=2.0GHz
Reverse Isolation, S12 -15 dB f=0.1GHz to 12.0GHz
De vice Voltage, VD 3.6 3.9 4.2 V
Gain Temperature Coefficient,
δGT/δT-0.0015 dB/°C
MTTF versus Temperature
@ ICC=50mA
Case Temperature 85 °C
Junction Temperature 122.9 °C
MTTF >1,000,000 hours
Thermal Resistance
θJC 194 °C/W Thermal Resistance, at any temperature (in
°C/W att) can be estimated by the following
equation: θJC (°C/Watt)=194[TJ(°C)/122]
Caution! ESD sensitive device.
RF Micro De vices b elie v es the furnishe d information is c orrect and a ccura te
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices doe s not
assume respon sibility for the us e of the described pro duct(s).
4-11
NBB-302
Rev A2 030210
Pin Function Description Interface Schematic
1GND
Ground connection. For best performance, k eep traces physically short
and connect immediately to ground plane.
2GND
Same as pin 1.
3GND
Same as pin 1.
4RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable fo r the frequenc y of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
5GND
Same as pin 1.
6GND
Same as pin 1.
7GND
Same as pin 1.
8RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal run-
away. Alternatively, a constant current supply circuit may be imple-
mented. Because DC is present on this pin, a DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. The supply side of the bias network should also be well
bypassed.
9GND
Same as pin 1.
RVCC VDEVICE
–()
ICC
-------------------------------------------
=
RF OUT
RF IN
4-12
NBB-302
Rev A2 030210
T ypical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations ar e available on request.
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the
ground to the trace on which the chip is moun ted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electric al connections to the chip are ma de through wire bonds. Either wedge or ball bo nding methods are acceptable
practices for wire bonding.
Assembly Procedure
Epo xy or eutectic die attach are both acceptab le attachment me thods . To p and bottom metallization are gold. Conductive
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is
Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the he ater bl ock temperature be set to 16 0°C±10°C.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC (Ω) 22 41 122 162 222 322
C block
4 8
1,2,3
C block
In Out
L choke
(optional)
RCC
VCC
VD = 3.9 V
VDEVICE
5,6,7,9
4-13
NBB-302
Rev A2 030210
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias In structions and Specification Summary Index for ease of operation
4-14
NBB-302
Rev A2 030210
Tape and Reel Dimensions
All Dimensions in Millimeters
A
D
B
F
T
O
S
330 mm (13") REEL Micro-X, MPGA
SYMBOL SIZE (mm)ITEMS SIZE (inches)
FLANGE B
T
F
330 +0.25/-4.0
18.4 MAX
12.4 +2.0
Diameter
Thickness
Space Between Flange
13.0 +0.079/-0.158
0.724 MAX
0.488 +0.08
HUB
O
S
A
102.0 REF
13.0 +0.5/-0.2
1.5 MIN
Outer Diameter
Spindle Hole Diameter
Key Slit Width D20.2 MINKey Slit Diameter
4.0 REF
0.512 +0.020 /-0.008
0.059 MIN
0.795 MIN
PIN 1
User Direction of Feed
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao an d Bo measure d on a plane 0.3 mm abov e the botto m of the poc ket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Poc ket pos i tion relat i ve to sp rocket ho l e measured as true position of pocket , not poc ket hole.
All di mensions in mm
SECTI ON A-A
R0.3 MAX.
Ko
0.30 ± 0.05
5.50 ± 0.05
See Note 6 12.00
± 0.30
1.75
A
AR0.5 TY P
1.5 MIN.
Bo
Ao 8.0
2.00 ± 0.05
See Note 6
4.0
See Note 1 +0.1
-0.0
1.5
4-15
NBB-302
Rev A2 030210
Device Voltage versus Amplifier Current
3.70
3.75
3.80
3.85
3.90
3.95
4.00
35.00 40.00 45.00 50.00 55.00 60.00
Ampl ifi er Current, ICC (mA)
Device Voltage, VD (V)
P1dB versus Frequency at +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Fr equency (GHz)
P1dB (dBm)
POUT/Gain versus PIN at 14 GHz
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
POUT/Gain versus PIN at 6 GHz
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout ( d Bm )
Gain (dB)
Third Order Intercept versus Frequency at +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Fr eq uency (GHz)
Output IP3 (dBm)
4-16
NBB-302
Rev A2 030210
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S22 versus Frequency at +25°C
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0 15.0 20.0
Fr equency (GHz)
S22 (dB)
S21 versus Frequency at +25°C
0.0
5.0
10.0
15.0
20.0
0.0 5.0 10.0 15.0 20.0
Fr equency (GHz)
S21 (dB)
S12 versus Frequency at +25°C
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0 15.0 20.0
Fr equency (GHz)
S12 (dB)
S11 versus Frequency at +25°C
-20.0
-15.0
-10.0
-5.0
0.0
0.0 5.0 10.0 15.0 20.0
Fre quency (GHz)
S11 (dB)
